do-214ac footprint
Abstract: 1N5913 J-STD-020B MIL-PRF19500 SMAJ5913 SMAJ5956 1N5956B
Text: SMAJ5913 thru SMAJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The SMAJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC
|
Original
|
SMAJ5913
SMAJ5956,
SMAJ5913-5956B
1N5913
1N5956B
SMAJ5913-SMAJ5956B
DO-214BA
DO-214AC
do-214ac footprint
J-STD-020B
MIL-PRF19500
SMAJ5956
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers Features Description • High CTRCE SAT comparable to Darlingtons The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
|
Original
|
MCT5201M,
MCT5210M,
MCT5211M
MCT52XXM
150kbits/s
E90700,
IEC60747-5-2
|
PDF
|
SCHOTTKY DIODE SOT-143
Abstract: 040P
Text: Silicon Schottky Diode Ring Quad Chips MA4E2062 Series MA4E2062 Series Preliminary Specifications Silicon Schottky Diode Ring Quards Features • • • • • • • Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions
|
Original
|
MA4E2062
OT-143
SCHOTTKY DIODE SOT-143
040P
|
PDF
|
Varactor Diodes
Abstract: dvh6731 "Varactor Diodes" varactor diodes application DVH6731-19 varactor diode capacitance measurement
Text: ESA lp h a Silicon Abrupt Varactor Diodes CVH2030 Series Features • Low Series Resistance - High Q ■ Extensive Selection of Capacitance Values ■ Available in a Wide Range of Package Outlines and in Die Form Description Maximum Ratings The silicon abrupt junction varactor diode changes
|
OCR Scan
|
CVH2030
DVH6730-14
DVH6730-15
DVH6730-16
DVH6730-17
DVH6730-18
DVH6730-19
DVH6730-20
DVH6730-21
DVH6730-22
Varactor Diodes
dvh6731
"Varactor Diodes"
varactor diodes application
DVH6731-19
varactor diode capacitance measurement
|
PDF
|
dvh6731
Abstract: No abstract text available
Text: « M M fe 9 fM ^ EUAlpha Silicon Abrupt Varactor Diodes CVH2030 Series Features Low Series Resistance - High Q B Extensive Selection of Capacitance Values Available in a Wide Range of Package Outlines and in Die Form Description The silicon abrupt junction varactor diode changes
|
OCR Scan
|
CVH2030
application730-20
dvh6731
|
PDF
|
MWI15-12A7
Abstract: IXYS MWI15-12A7 E72873 1327 Servo MWI 15-12A7
Text: MWI 15-12A7 IGBT Module Sixpack IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.0 V Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI15-12A7 13 1 5 9 2 6 10 16 15 14 E72873 Pin configuration see outlines. 3 7 11 4 8 12 17 Features: Application:
|
Original
|
15-12A7
MWI15-12A7
E72873
20080805a
MWI15-12A7
IXYS MWI15-12A7
E72873
1327 Servo
MWI 15-12A7
|
PDF
|
25-12A7
Abstract: 25-12A7T E72873 MWI25-12A7 MWI25-12A7T IXYS MWI15-12A7 MWI15-12A7T
Text: MWI 25-12A7 T IGBT Module Sixpack IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25-12A7 MWI25-12A7T 13 T version 1 5 9 T 2 6 10 16 15 14 E72873 Pin configuration see outlines. T
|
Original
|
25-12A7
MWI25-12A7
MWI25-12A7T
E72873
20080805a
25-12A7T
E72873
MWI25-12A7
MWI25-12A7T
IXYS MWI15-12A7
MWI15-12A7T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MWI 25-12A7 T IC25 = 50 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25-12A7 MWI25-12A7T 13 T version 1 5 9 T 2 6 10 16 15 14 E72873 Pin configuration see outlines. T
|
Original
|
25-12A7
MWI25-12A7
MWI25-12A7T
E72873
20080805a
|
PDF
|
MA4E2038
Abstract: handling of beam lead diodes police radar detector M541
Text: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation
|
Original
|
MA4E2038
MA4E2038
handling of beam lead diodes
police radar detector
M541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MWI 50-12 T7T IC25 = 80 A = 1200 V VCES VCE sat typ. = 1.7 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 25, 26 15, 16 17 1 2 5 23 24 9 21 22 6 19 20 10 3 7 11 4 8 12 NTC Pin arrangement see outlines 18 27, 28 13, 14 Features IGBTs Conditions
|
Original
|
|
PDF
|
DIODE T4 3560
Abstract: T4 3560 B ixys VBH 40-05B T4 3560 6 diode bridge 2170
Text: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V RDSon = 116 m Ω VRRM = 1200 V IDAV25 = 90 A Preliminary data pin configuration see outlines Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A
|
Original
|
40-05B
IDAV25
IFAV25
IFAV80
DIODE T4 3560
T4 3560 B
ixys VBH 40-05B
T4 3560 6
diode bridge 2170
|
PDF
|
SMP1300
Abstract: marking AA SOD-323 marking AA DIODE SOD 617 sot marking DB SOD-323 MARKING va SOT-23 Microstrip Line SMP1307-05 Alpha Industries pin diodes sot-23 marking VA
Text: EHAlpha Plastic Packaged Surface Mount PIN Diodes SMP1300 Series Features • Industry Standard Outlines % ê SOD 323 SOT 23 -ft SOT 143 ■ Designed for High Performance Switches & Attenuators ■ Single and Dual Diode Configurations ■ Low Inductance Designs for Microwave
|
OCR Scan
|
SMP1300
SMP1304-07
SMP1307--
SMP1307-01
marking AA SOD-323
marking AA DIODE SOD
617 sot
marking DB SOD-323
MARKING va SOT-23
Microstrip Line
SMP1307-05
Alpha Industries pin diodes
sot-23 marking VA
|
PDF
|
50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
|
Original
|
50-12P1
42T120
50-12P1
|
PDF
|
237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
|
Original
|
50-06P1
25T60
237td
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE sat = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 19 20 10 6 2 27 28 29 NTC 9 5 1 24 25 26 21 22 23 3 7 11 4 8 12 E72873 Pin coniguration see outlines. 13, 14, 15
|
Original
|
MWI100-12T8T
E72873
20100910c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VUO 98 IdAV = 100 A VRRM = 800-1600 V Three Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS16 Types ~A 1 ~L 9 ~ K10 VUO 98-08NO7 VUO 98-12NO7 VUO 98-14NO7 VUO 98-16NO7 EG 1 Pin arangement see outlines
|
Original
|
98-08NO7
98-12NO7
98-14NO7
98-16NO7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VUO 98 IdAV = 100 A VRRM = 800-1600 V Three Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS18 Types ~A 1 ~L 9 ~ K10 VUO 98-08NO7 VUO 98-12NO7 VUO 98-14NO7 VUO 98-16NO7 EG 1 Pin arangement see outlines
|
Original
|
98-08NO7
98-12NO7
98-14NO7
98-16NO7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MWI75-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 110 A VCE sat = 1.7 V Part name (Marking on product) MWI75-12T8T 16, 17, 18 30, 31, 32 D1 D3 T1 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 T5 5 1 19 3 D5 T3 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.
|
Original
|
MWI75-12T8T
E72873
20100910c
|
PDF
|
98-16NO7
Abstract: 98-12NO7 98-08NO7
Text: VUO 98 IdAV = 100 A VRRM = 800-1600 V Three Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS16 Types ~A 1 ~L 9 ~ K10 VUO 98-08NO7 VUO 98-12NO7 VUO 98-14NO7 VUO 98-16NO7 EG 1 Pin arangement see outlines
|
Original
|
98-08NO7
98-12NO7
98-14NO7
98-16NO7
98-16NO7
98-12NO7
98-08NO7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines
|
Original
|
42T60
75-06P1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.
|
Original
|
MIXA150W1200TEH
E72873
20110510b
|
PDF
|
E72873
Abstract: No abstract text available
Text: VUO 120-xxNO2T Three Phase Rectiier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin coniguration see outlines. Features:
|
Original
|
120-xxNO2T
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
|
PDF
|
PS18
Abstract: No abstract text available
Text: VUO 122 IdAV = 117 A VRRM = 800-1600 V Three Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS18 Types ~A 1 ~L 9 ~ K10 VUO 122-08NO7 VUO 122-12NO7 VUO 122-14NO7 VUO 122-16NO7 EG 1 Pin arangement see outlines
|
Original
|
122-08NO7
122-12NO7
122-14NO7
122-16NO7
PS18
|
PDF
|
E72873
Abstract: 120-16NO2T VUO120-16NO2T ntc application vuo120-16no2
Text: VUO 120-xxNO2T Three Phase Rectifier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin configuration see outlines. Features:
|
Original
|
120-xxNO2T
1200/1600V
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
VUO120-16NO2T
ntc application
vuo120-16no2
|
PDF
|