thermistor inas
Abstract: No abstract text available
Text: Detector Components Part No: IA-010-TE2/TO8 .550 .06 PIN OUT 1 2 3 4 5 6 7 8 .375 .5 1 2 3 4 .225 .075 COOLER - THERMISTOR THERMISTOR COOLER (+) DETECTOR CATHODE DETECTOR ANODE NO CONNECT NO CONNECT Note: Dimensions in inches .017 8 7 6 5 = = = = = = = =
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IA-010-TE2/TO8
thermistor inas
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thermistor inas
Abstract: No abstract text available
Text: Detector Components Part No: IA-020-TE2/TO8 .550 .06 PIN OUT 1 2 3 4 5 6 7 8 .375 .5 1 2 3 4 .225 .075 COOLER - THERMISTOR THERMISTOR COOLER (+) DETECTOR CATHODE DETECTOR ANODE NO CONNECT NO CONNECT Note: Dimensions in inches .017 8 7 6 5 = = = = = = = =
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IA-020-TE2/TO8
thermistor inas
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"Thermoelectric Cooler"
Abstract: KIRDB0119EA thermistor inas
Text: Thermoelectrically-cooled Detectors Thermoelectrically-cooled or TE-cooled detectors consist of an in frared detector (such as PbS, PbSe cells, InGaAs, Ge photodiodes and InAs detectors), a thermoelectric cooler and a thermistor sealed into the same package. There are one-stage TE-cooled types and twostage TE-cooled types. Temperature differences with regard to ambi
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KIRDB0119EA
"Thermoelectric Cooler"
KIRDB0119EA
thermistor inas
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Untitled
Abstract: No abstract text available
Text: I REVISIONS DESCRIPTION 0 INITIAL RELEASE 1 CHANGES PER DCN 402287 DATE 04/12/99 11/03/0D REV APPROVED FC/HD WR/OFG D 156 1.002 DIA THRU 2PLCS ^ J 1.000 i.005 PIN ND. .50 R TUP VIEW .756 DIA - SEALANT A CUT PIN #6 FDR MATING PART SLEEVE CDLOR 1 THERMISTOR
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11/03/0D
B77E------
J12TE4-3C
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J12TE2-66D-R01M
Abstract: J12TE3-66D-R250U INSB PHOTODIODE jones chopper J12-18C-R250U RBBG J12-18C thermistor inas detector inas hsa2
Text: Judson Technologies J12 SERIES INAS DETECTORS PB 220 October 2000 Operating Instructions Typical J12 Series Operating Circuit RF > 10x RD IS - Vo = IS • RF + Detector Ios Preamp Selection vs Shunt Selection Impedance Recommended Detector Shunt Op Amp Impedance ohms
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6X101
Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Text: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure ment Temp. (mm) fC) IR Cutoff Wave length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109
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000272b
P2837-01
5X108
1X109
2X1010
4X102
3X109
6X109
5X109
K1713-01
6X101
P839-08
K1713-03
B1920-01
P819
P2837-01
ir P838
P838
thermistor inas
detector inas
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thermistor inas
Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.
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KI80A0055EA
0G0470
P394A,
P3226-02
P791-11
P3207-04
P4115
K1713-01,
K3413-01,
P3981-01,
thermistor inas
INSB PHOTODIODE
101 thermistor
InSb spectral response
insb detector
preamplifier c4159
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Untitled
Abstract: No abstract text available
Text: InAsSb photovoltaic detector P12691-201 High-speed response and high sensitivity in the 8 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P12691-201 is an infrared detector that provides high sensitivity in the 8 μm spectral band by employing our unique crystal growth technology and back-illuminated structure and by integrating a lens. The InAsSb photovoltaic detector has a PN
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P12691-201
P12691-201
B1201,
KIRD1127E02
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Untitled
Abstract: No abstract text available
Text: InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in the 5 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal
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P11120-201
P11120-201
P11120-901
KIRD1113E02
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United Detector Technology
Abstract: No abstract text available
Text: InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in the 5 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal
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P11120-201
P11120-201
P11120-901
SE-171
KIRD1113E01
United Detector Technology
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 High-speed, low noise photovoltaic IR detectors InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and lower noise.
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P8079
P7163
A3179
A3179-01
SE-171
KIRD1027E02
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IR detector
Abstract: photovoltaic module ir detectors Metal Detector Semiconductor Radiation Detector A3179 A3179-01 C1103-04 P4631-01 P7163
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 High-speed, low noise photovoltaic IR detectors InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and lower noise.
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P8079
P7163
A3179
A3179-01
SE-171
KIRD1027E04
IR detector
photovoltaic module
ir detectors
Metal Detector
Semiconductor Radiation Detector
A3179
A3179-01
C1103-04
P4631-01
P7163
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thermistor inas
Abstract: pbs photoconductive photovoltaic module A3179 A3179-01 C1103-04 P10090 P10090-01 P10090-11 P10090-21
Text: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
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P10090
P8079
SE-171
KIRD1099E03
thermistor inas
pbs photoconductive
photovoltaic module
A3179
A3179-01
C1103-04
P10090-01
P10090-11
P10090-21
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
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P10090
P8079
SE-171
KIRD1099E03
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transistor C4159
Abstract: c4159 thermistor inas photovoltaic module P10090 pbs photoconductive A3179 A3179-01 C1103-04 P10090-21
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver
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P10090
P7163
P8079
P7163)
SE-171
KIRD1099E04
transistor C4159
c4159
thermistor inas
photovoltaic module
pbs photoconductive
A3179
A3179-01
C1103-04
P10090-21
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N10110
Abstract: No abstract text available
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.
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P8079
P7163
A31Telephone:
SE-171
KIRD1027E06
N10110
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A3179
Abstract: A3179-01 C1103-04 P4631-01 P7163 P8079 P8079-01 P8079-11 P8079-21 c4159 e
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.
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P8079
P7163
SE-171
KIRD1027E06
A3179
A3179-01
C1103-04
P4631-01
P7163
P8079-01
P8079-11
P8079-21
c4159 e
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Untitled
Abstract: No abstract text available
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver
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P10090
P7163
P8079
P7163)
SE-171
KIRD1099E04
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Untitled
Abstract: No abstract text available
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that
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P10090
P7163
P8079
P7163)
SE-171
KIRD1099E06
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Untitled
Abstract: No abstract text available
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that
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P10090
P7163
P8079
P7163)
KIRD1099E07
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Untitled
Abstract: No abstract text available
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that
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P10090
P7163
P8079
P7163)
KIRD1099E07
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Untitled
Abstract: No abstract text available
Text: InAs photovoltaic detectors P10090 series P7163 Low noise, high reliability infrared detectors for 3 m band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 m as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver
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P10090
P7163
P8079
P7163)
SE-171
KIRD1099E05
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors for 3 µm band InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
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P10090
P8079
SE-171
KIRD1099E02
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LED36-TEC-PR
Abstract: No abstract text available
Text: LED36-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
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LED36-TEC-PR
LED36-SMD3
300x300
150-200mA
LED36-TEC-PR
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