Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E64M16S-XNBX 64Mx16 DDR SDRAM FEATURES DDR SDRAM rate = 200, 250, 266, 333* Package: BENEFITS • 60 Plastic Ball Grid Array PBGA , 10mm x 12.5mm x 1.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply
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64Mx16
512Mb
200Mbs
250Mbs
266Mbs
333Mbs
W3E64M16S-XNBX
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VCCQ15
Abstract: No abstract text available
Text: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* Package: • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply
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64Mx16
512Mb
W3E64M16S-XSBX
VCCQ15
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7812
Abstract: No abstract text available
Text: White Electronic Designs W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* Package: • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply
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64Mx16
512Mb
7812
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W3E64M16S-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES DDR SDRAM rate = 200, 250, 266, 333* Package: BENEFITS • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply
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W3E64M16S-XSBX
64Mx16
512Mb
-12mA
W3E64M16S-XSBX
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W3J512M32G
Abstract: M41K256M32
Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages:
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W3J512M32G-XBX
W3J512M32G
W3J512M36/40G
x36/40
M41K256M32
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M41K256M32
Abstract: No abstract text available
Text: W3J512M32K-XBX W3J512M36K T -XB2X W3J512M36/40K(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages:
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W3J512M32K-XBX
W3J512M36K
W3J512M36/40K
M41K256M32
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MPR 55 F resistor
Abstract: M41K256M32
Text: W3J512M32G-XBX W3J512M32/36/40G T -XB2X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages: Reduced part count
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W3J512M32G-XBX
W3J512M32/36/40G
MPR 55 F resistor
M41K256M32
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W3J512M40G
Abstract: M41K256M32
Text: W3J512M32G-XBX W3J512M32GT-XB2X W3J512M40G T -XB3X *PRELIMINARY 2GB – 512M x 32/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages: Reduced part count
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W3J512M32G-XBX
W3J512M32GT-XB2X
W3J512M40G
x36/40
W3J512M36K
W3J512M32K
M41K256M32
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M41K256M32
Abstract: No abstract text available
Text: W3J512M32K-XBX W3J512M32/36/40K T -XB2X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800, 1,066, 1333 Mb/s 74% Space savings vs. FBGA Packages: Reduced part count
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W3J512M32K-XBX
W3J512M32/36/40K
8n-b6/40K
x32-bit
M41K256M32
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Untitled
Abstract: No abstract text available
Text: W3E64M16S-XBX *PRELIMINARY 64Mx16 DDR SDRAM Multi-Chip Package FEATURES GENERAL DESCRIPTION DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E64M16S-XBX
64Mx16
128MByte
512Mb
128MB
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Untitled
Abstract: No abstract text available
Text: CY7C2262XV18/CY7C2264XV18 36-Mbit QDR II+ Xtreme SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • Separate independent read and write data ports
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CY7C2262XV18/CY7C2264XV18
36-Mbit
CY7C2264XV18
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Untitled
Abstract: No abstract text available
Text: W3H32M64EA-XSBX ADVANCED* 32M x 64 DDR2 SDRAM Single-Rank 208 PBGA MCP FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 62% Space savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm 42% I/O reduction vs FBGA
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W3H32M64EA-XSBX
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Untitled
Abstract: No abstract text available
Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 62% Space savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm 42% I/O reduction vs FBGA
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W3H32M64E-XSBX
256MB
256MB"
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Untitled
Abstract: No abstract text available
Text: W3H32M64EA-XSBX ADVANCED* 256MB – 32M x 64 DDR2 SDRAM Single-Rank 208 PBGA MCP FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 62% Space savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M64EA-XSBX
256MB
256MB"
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Untitled
Abstract: No abstract text available
Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 69% space savings vs. FPBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm
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W3H32M72E-XSB2X
W3H32M72E-XSB2XF
256MB
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MT41K1G4
Abstract: 2Gb Micron
Text: Preliminary‡ 4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41K512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks
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MT41K1G4
MT41K512M8
SAC305
09005aef83f01ff1
MT41K1G4
2Gb Micron
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MT41K1G8
Abstract: MT41K2G4 A711 micron marking code information
Text: Preliminary‡ 8Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks
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MT41K2G4
MT41K1G8
SAC305
09005aef84787542
MT41K1G8
MT41K2G4
A711
micron marking code information
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MT41J256m8 fbga
Abstract: Micron quaddie micron marking code information Theta JC of FBGA DDR3 impedance 96 ball fbga thermal resistance micron DDR3 SDRAM micron QuadDie DDR3 78 ball fbga thermal resistance
Text: Preliminary‡ 8Gb: x4, x8 1.5V QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J2G4 – 64 Meg x 4 x 8 Banks x 4 Ranks MT41J1G8 – 32 Meg x 8 x 8 Banks x4 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 4 ranks – 32 Meg x 8 x 8 banks x 4 ranks
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MT41J2G4
MT41J1G8
SAC305
09005aef8451cfba
MT41J256m8 fbga
Micron quaddie
micron marking code information
Theta JC of FBGA
DDR3 impedance
96 ball fbga thermal resistance micron
DDR3 SDRAM micron
QuadDie DDR3
78 ball fbga thermal resistance
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DDR3 timing diagram
Abstract: QuadDie DDR3 DDR3 impedance DDR3 SDRAM micron MT41J2G8 micron marking code information micron power resistor Micron quaddie micron technology 2013 ddr3 78 ball
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41J4G4
MT41J2G8
SAC305
09005aef850f7993
DDR3 timing diagram
QuadDie DDR3
DDR3 impedance
DDR3 SDRAM micron
MT41J2G8
micron marking code information
micron power resistor
Micron quaddie
micron technology 2013
ddr3 78 ball
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MT41K2G8
Abstract: MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41K4G4
MT41K2G8
SAC305
09005aef850f70c4
MT41K2G8
MT41K4G4
MT41K1GM4
micron technology 2013
Micron quaddie
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DDR3 SDRAM micron
Abstract: micron technology 2013 DDR3 impedance QuadDie DDR3
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41J4G4
MT41J2G8
SAC305
09005aef850f7993
DDR3 SDRAM micron
micron technology 2013
DDR3 impedance
QuadDie DDR3
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MT41J1G8
Abstract: 8Gb DDR3 SDRAM twindie DDR3 SDRAM micron micron marking code information A1A4M DDR3 micron 4Gb DDR3 SDRAM DDR3 timing diagram MT41J2G4 Theta JC of FBGA
Text: Preliminary‡ 8Gb: x4, x8 1.5V TwinDie DDR3 SDRAM Features TwinDie DDR3 SDRAM MT41J2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41J1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks
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MT41J2G4
MT41J1G8
SAC305
09005aef847fe0df
MT41J1G8
8Gb DDR3 SDRAM twindie
DDR3 SDRAM micron
micron marking code information
A1A4M
DDR3 micron
4Gb DDR3 SDRAM
DDR3 timing diagram
MT41J2G4
Theta JC of FBGA
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MT41K2G8
Abstract: No abstract text available
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41K4G4
MT41K2G8
78-ball
DDR3-1333)
DDR3-1066)
SAC305
09005aef850f70c4
MT41K2G8
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Untitled
Abstract: No abstract text available
Text: W3H128M72ER-XNBX ADVANCED* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 45% Space savings vs. FBGA Package: Reduced part count • 255 Plastic Ball Grid Array PBGA , 23 x 21mm 51% I/O reduction vs FBGA
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W3H128M72ER-XNBX
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