Theta-JC
Abstract: theta JA Theta-JC plcc tqfp 44 thermal resistance datasheet 500LFM QL12X16B QL16X24B QL2003 QL2005 QL2007
Text: 9 The thermal performance of a pASIC in its package is determined by many factors, including packaging materials, die size, package design and construction, etc. Thermal resistance is the measure of the ability of the package to conduct heat from the chip through the package to the external
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QL8X12B
QL12X16B
QL16X24B
QL24X32B
QL2005
QL2007
QL2009
QL2003
Theta-JC
theta JA
Theta-JC plcc
tqfp 44 thermal resistance datasheet
500LFM
QL12X16B
QL16X24B
QL2003
QL2005
QL2007
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C18045
Abstract: CDA151 9918 9936
Text: 05/31/2005 RELIABILITY REPORT FOR DS80C390, Rev C3 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS80C390,
Reliab918
30C/60%
C18045
CDA151
9918
9936
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PS24-3
Abstract: MAX235 die
Text: MAX248 RELIABILITY REPORT FOR MAX248CQH+D PLASTIC ENCAPSULATED DEVICES April 15, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
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MAX248
MAX248CQH
/-800V
/-250mA.
NEXDFA080C,
NEXDFA080B,
PS24-3
MAX235 die
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PD-1503
Abstract: pd1503 PD-2078 PD-2028 pd 2028 PD-2026 PD2028 pd2029 PD-2029 jedec MS-026 ABA
Text: Pericom offers a wide range of advanced packaging solutions to fit any application including SOTiny , DisplayPort™, ReDriver™, HDMI™, others. Additional information can be obtained from individual data sheets, or by contacting your Pericom representative.
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MO-267
PD-2085
PD-2073
MO-236/MO-252
PD-2074
MO-220
PD-2076
PD-1503
pd1503
PD-2078
PD-2028
pd 2028
PD-2026
PD2028
pd2029
PD-2029
jedec MS-026 ABA
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tqfp 44 thermal resistance datasheet
Abstract: tqfp 44 thermal resistance plcc junction to ambient resistance 500LFM QL12X16B QL16X24B QL24X32B QL8X12B Thermal Resistance Calculation TO
Text: THERMAL MANAGEMENT The thermal performance of a pASIC in its package is determined by many factors, including packaging materials, die size, package design and construction, etc. Thermal resistance is the measure of the ability of the package to conduct heat from the chip through the package to the external environment. This is represented in
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QL24X32B
QL8X12B
QL12X16B
QL16X24B
tqfp 44 thermal resistance datasheet
tqfp 44 thermal resistance
plcc junction to ambient resistance
500LFM
QL12X16B
QL16X24B
QL24X32B
QL8X12B
Thermal Resistance Calculation TO
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8500A
Abstract: CY2PP318 CY2PP318JI CY2PP318JIT
Text: FastEdge Series CY2PP318 1 of 2:8 Differential Clock/Data Fanout Buffer Features Functional Description The CY2PP318 is a low-skew, low propagation delay 1-to-8 differential fanout buffer targeted to meet the requirements of high-performance clock and data distribution applications. The
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CY2PP318
CY2PP318
150ps
8500A
CY2PP318JI
CY2PP318JIT
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Untitled
Abstract: No abstract text available
Text: FastEdge Series CY2PP318 1:8 Differential Clock/Data Fanout Buffer Features Functional Description The CY2PP318 is a low-skew, low propagation delay 1-to-8 differential fanout buffer targeted to meet the requirements of high-performance clock and data distribution applications. The
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CY2PP318
28-pin
CY2PP318
150ps
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Untitled
Abstract: No abstract text available
Text: FastEdge Series CY2PP318 1:8 Differential Clock/Data Fanout Buffer Features Functional Description The CY2PP318 is a low-skew, low propagation delay 1-to-8 differential fanout buffer targeted to meet the requirements of high-performance clock and data distribution applications. The
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CY2PP318
28-pin
CY2PP318
150ps
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Untitled
Abstract: No abstract text available
Text: ^ c te l -m Package Characteristics and Mechanical Drawings P a c k a g e T h e rm a l C h a ra c te ris tic s Package Type Plastic Leaded Chip Carrier PLCC Plastic Quad Flatpack (PQFP) Plastic Quad Flatpack (PQFP)
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PBGA272
PBGA313
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ADSP-21060L
Abstract: ADSP-21062L EDI8L32128V EDI8L32256C EDI8L32512V EDI8L3265C MO-47AE
Text: EDI8L32128V T NO Features 128Kx32 CMOS High Speed Static RAM 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12,15 and 20ns User Configurable Organization with Minimal Additional Logic
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EDI8L32128V
128Kx32
ADSP-21060L
ADSP-21062L
MO-47AE)
EDI8L32128V
EDI8L32128V12AC
EDI8L32128V15AC
EDI8L32128V20AC
ADSP-21060L
ADSP-21062L
EDI8L32256C
EDI8L32512V
EDI8L3265C
MO-47AE
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Untitled
Abstract: No abstract text available
Text: EDI8L32128V White Electronic Designs T NO FEATURES 128KX32 CMOS HIGH SPEED STATIC RAM 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12,15 and 20ns User Configurable Organization
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EDI8L32128V
128Kx32
ADSP-21060L
ADSP-21062L
MO-47AE)
64Kx32
EDI8L3265C)
256Kx32
EDI8L32256C)
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ADSP-21060L
Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Text: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12,15 and 20ns User Configurable Organization
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EDI8L32128V
128KX32
ADSP-21060L
ADSP-21062L
MO-47AE)
EDI8L32128V
EDI8L32128V12AC
EDI8L32128V15AC
EDI8L32128V20AC
ADSP-21060L
ADSP-21062L
EDI8L32512V
MO-47AE
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Untitled
Abstract: No abstract text available
Text: EDI8LM32513V-RP 512Kx32 SRAM Ruggedized Plastic 512KX32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 1 2 ,1 5 and 20ns • Individual Byte Enables Commercial, Industrial and Military temperature range.
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EDI8LM32513V-RP
512Kx32
EDI8LM32513V
16-Megabit
EDI8LM32513V-RP
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EDI8L32128V
Abstract: EDI8L32512V MO-47AE TMS320LC31
Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to
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EDI8L32256V
256Kx32
256Kx32
EDI8L32256V
TMS320LC31,
512Kx16.
512Kx48
256Kx24s
EDI8L24256V)
EDI8L32128V
EDI8L32512V
MO-47AE
TMS320LC31
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MO-47AE
Abstract: DSP96002 EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C 512Kx48
Text: EDI8L32256C 256Kx32 SRAM Module 256Kx32, 5V Static Ram Features 256Kx32 bit CMOS Static DSP Memory Solution • Texas Instruments TMS320C3x, TMS320C4x • Analog SHARCTM DSP • Motorola DSP96002 Random Access Memory Array • Fast Access Times: 15, 17, 20 and 25ns
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EDI8L32256C
256Kx32
256Kx32,
TMS320C3x,
TMS320C4x
DSP96002
MO-47AE
EDI8L32256C
MO-47AE
DSP96002
EDI8L24128C
EDI8L32128C
EDI8L32512C
EDI8L3265C
512Kx48
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ADSP-21060L
Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization
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EDI8L32128V
128Kx32
ADSP-21060L
ADSP-21062L
MO-47AE)
EDI8L32128V
EDI8L32128V12AI
EDI8L32128V15AI
ADSP-21060L
ADSP-21062L
EDI8L32512V
MO-47AE
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ADSP-21060L
Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization
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EDI8L32128V
128Kx32
ADSP-21060L
ADSP-21062L
MO-47AE)
EDI8L32128V
EDI8L32128V15AI
EDI8L32128V20AI
ADSP-21060L
ADSP-21062L
EDI8L32512V
MO-47AE
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Untitled
Abstract: No abstract text available
Text: EDI8LM32257C-RP m 256Kx32 SRAM Ruggedized Plastic x ELECTRONIC DESIGNS INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features The EDI8LM32257C is a high-speed 8-Megabit static RAM device with access times of 15 and 20ns over the Commer 256Kx32 bit CMOS Static
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EDI8LM32257C-RP
256Kx32
EDI8LM32257C
57C20AM
EDI8LM32257C25AM
JEDECMO-47AE
32257C
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Untitled
Abstract: No abstract text available
Text: EDI8LM32257V-RP ^EDI 256Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features 256Kx32 bit CMOS Static The EDI8LM32257V is a high-speed 8-Megabit static RAM Random Access Memory Array • Fast Access Times: 1 2 ,1 5 and 20ns
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EDI8LM32257V-RP
256Kx32
EDI8LM32257V
JEDECMO-47AE
EDI8LM32257V-RP
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PDF
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Untitled
Abstract: No abstract text available
Text: m x EDI8LM32257C-RP 256Kx32SRAM Ruggedized Plastic ELECTRONIC DESIGNS INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features The EDI8LM32257C is a high-speed 8-Megabit static RAM device with access times of 15 and 20ns over the Comm er 256Kx32 bit CMOS Static
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EDI8LM32257C-RP
256Kx32SRAM
256Kx32
EDI8LM32257C
M047AE
DI8LM32257C-RP
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cd 5151
Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
Text: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution
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EDI8L32256V
256Kx32
EDI8L32256V
21060L
21062L
TMS320LC31
512Kx16BS2\
cd 5151
512kx4
EDI8L32128V
EDI8L32512V
MO-47AE
TMS320LC31
ADSP2106XL
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Untitled
Abstract: No abstract text available
Text: EDI8LM32513V-RP 512Kx32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 1 2 ,1 5 and 20ns • Individual Byte Enables Commercial, Industrial and Military temperature range.
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EDI8LM32513V-RP
512Kx32
M0-47AE
MO-47AE
EDI8LM32513V-RP
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Untitled
Abstract: No abstract text available
Text: EDI8LM32257V-RP ^EDI 256Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC 256Kx32 CMOS High Speed Static RAM Features ADVANCED 256Kx32 bit CMOS Static The EDI8LM32257V is a high-speed 8-Megabit static RAM Random Access Memory Array • Fast Access Times: 1 2 ,1 5 and 20ns
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256Kx32
EDI8LM32257V-RP
EDI8LM32257V
047AE
EDI8LM32257V-RP
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smd code marking 56 sot23-6
Abstract: marking code 604 SOT23-6 PD-1503 smd zG sot 23 smd marking sot23 W16 ic SMD MARKING CODE ad 5.9 ic ap 2068 PD2029 SMD MARKING ed sot23-5 MARKING CODE SMD IC sot23-5
Text: PACKAGING Package Information Packaging & Ordering Packaging Solutions for Modern Electronic Design In addition to standard legacy packaging, Pericom leads the industry in smaller, more advanced packaging profiles and footprints for today’s designers. Our offerings include very small packages,
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PI3USB412
PI74STX1GU04A
PI3USBA03
PI74STX2G04
PI3USBA201
PI74STX2G14
PI5A121
PI74STX2G4245
PI5A122
smd code marking 56 sot23-6
marking code 604 SOT23-6
PD-1503
smd zG sot 23
smd marking sot23 W16
ic SMD MARKING CODE ad 5.9
ic ap 2068
PD2029
SMD MARKING ed sot23-5
MARKING CODE SMD IC sot23-5
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