THOMSON-CSF plastic power transistors
Abstract: bu bdx 64 bdx 330 BUV37 BDV65 BDV64 CB285 BDV67 BDX33 BDX53
Text: 1y plastic power transistors transistors de puissance plastiques THOMSON-CSF Type •c v CEO VCEX* cont <V A) Ptot PNP NPN (W) H21E / ■c *VC E = 1 £ V max min (A) V C E(sat)/ >C ! >B max (V) (A) (A) td + tr •max typ fcl») general purpose darlingtons
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BDX53
BDX33
O-224
O-22CIAB
CB-117
BUV37
CB-244
CB-285
THOMSON-CSF plastic power transistors
bu bdx 64
bdx 330
BUV37
BDV65
BDV64
CB285
BDV67
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BD 139 140
Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)
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O-I26
CB-16
/TO-202
CB-203
CB-244
BD 139 140
bo 135
BD NPN transistors
bo 139
BO 829
B0707
b0709
BD304
B0907
CB-117
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J165
Abstract: BD167 bf 169 BD 166, 168, 170
Text: BD 165 BD 167 BD 169 NPN SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SIL IC IU M NPN, BASE EPITAXIES Compì. BD 166, BD 168, BD 170 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen tary or quasi complementary symetry ampli
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BO 241 A
Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A
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O-220
drawingCB-117on
BO 241 A
bd2410
BD241
TF 241
BD NPN transistors
BD - 100 V
jc31
241B
BD 241
7410
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LT 238
Abstract: BD 238 BD234
Text: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen tary or quasi complementary symetry ampli
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w26c
Abstract: ESM 11 thomson ESM136 15S2 25CC
Text: ESM 136 ESM 138 ESM 140 PNP SILICON TRANSISTORS EPITAXIAL BASI TRANSISTORS PNP S ILIC IU M A BASE EPITAXIEE Compì, of ESM 135, 137, 139 PRELIMINARY DATA NO TICE PR EL IM IN A IRE LF large signal power amplification Am plification BF grands signaux de puissance
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O-220
drawingCB-117on
CB-117
w26c
ESM 11 thomson
ESM136
15S2
25CC
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esm 117
Abstract: ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE
Text: ESM 217 ESM 218 NPN SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS SILIC IU M D ARLIN G TO N NPN, BASE EPITAXfEE Compl. o f ESM 2 6 1 ,2 6 2 P R E L IM IN A R Y D A TA NOTICE P R E LIM IN A IR E Monolithic construction Construction m onolithique
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O-220
drawingCB-117on
CB-117
100mA
300/JS
esm 117
ESM218
TRANSISTORS SILICIUM, BASE EPITAXIEE
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BG433
Abstract: Bo435 vertical tv deflexion BD 435 sus 433
Text: BD433 BD435 NPN S IL IC O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS S IL IC IU M NPN. BASE E P IT A X IE E Compì, o f BD 4 3 4 , BO 436 P R E L IM IN A R Y D A T A NOTICE P R E LIM IN A IR E These transistors are intended for complemen tary or quasi complementary symetry ampli
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BG433
Bo435
vertical tv deflexion
BD 435
sus 433
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amplificateur
Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
Text: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen ta ry or quasi complementary sym etry amplifiers :
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2N6109
Abstract: 2N6107 2N6111 PNP 2n series an 6107 2N 6107 ZA2N
Text: 2N 6107 2N 6109 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SILIC IU M PNP, BASE E PITAXIEE 2N 6111 Compì, of 2N 5490 series PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification Am plification B F grands signaux de puissance
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CB-117on
CB-117
2N6109
2N6107
2N6111
PNP 2n series
an 6107
2N 6107
ZA2N
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BD 468 S
Abstract: bj 170 BD170
Text: PNP SILICON TRANSISTORS, EP ITAXIAL BASE BG166 T R A N S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E g Q - |g g BD 170 Compl.of BD 165, BD 167, BD 169 PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E These transistors are intended for complemen
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J-60V
BD 468 S
bj 170
BD170
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BD302
Abstract: bd304 7500BD deflexion
Text: BD 302 BD 304 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IA L E Compì, of BD 3 0 1 ,3 0 3 Dissipation and Iç /g derating Plastic case Variation de dissipation e t de l$ /g B o itie r plastique 55 W BD 302 BD 304
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bdy82
Abstract: BDY83
Text: BDY 82 BDY 83 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E Compì, of BDY 80, BDY 81 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance
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BDY82
O-220
drawingCB-117on
CB-117
bdy82
BDY83
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BD - 100 V
Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
Text: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E
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O-126
BD - 100 V
transistor BD 522
BD 680
vertical tv deflexion
bd 676
bd676
bd678
darlington bd
deflexion
LB 676
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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CB-69
14f4g
D 5038 Transistor Horizontal
amplificateur audio a base de transistor
transistor 2n 892 X1
amplificateur BF
transistor ST TYN 616
equivalent of transistor bul 38 da
bd 317 schema
transistor 3055 out hv
ESM214
Transistor bdy 58
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on 5296
Abstract: c 5296 m5298 2N5298 2n5294 2n5296 .w15C w15c
Text: 2N 5294 NPN SILICON TRANSISTORS, HOMOBASES 2 |\J 5 2 9 6 T R A N S IS T O R S N P N S I L I C I U M , H O M O B A S E S 2N 5298 Compì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Complementary power amplification stages A m p lifica tio n de puissance à symétrie complémentaire
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T0-220
drawingCB-117on
CB-117
on 5296
c 5296
m5298
2N5298
2n5294
2n5296
.w15C
w15c
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on 5296
Abstract: c 5296 2N5296 2n5294 npn 100n 1a 2n5298
Text: NPN S ILICO N T R A N S IS T O R S , H O M O B A S E S 2N 5294 TRANSISTORS NPN S ILIC IU M , HOMOBASES 2 |\J 5 2 9 6 2N 5298 Com pì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Com plementary power am plification stages A m p lifica tio n de puissance à symétrie complémentaire
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T0-220
drawingCB-117on
CB-117
on 5296
c 5296
2N5296
2n5294
npn 100n 1a
2n5298
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c 5296
Abstract: on 5296 2N5296 2N5294 ci 7411 2n 397 2n 394 esm 200 2n5298 w15C
Text: NPN S ILICO N T R A N S IS T O R S , H O M O B A S E S 2N 5294 TRANSISTORS NPN S ILIC IU M , HOMOBASES 2 |\J 5 2 9 6 2N 5298 Com pì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Com plementary power am plification stages A m p lifica tio n de puissance à symétrie complémentaire
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T0-220
drawingCB-117on
CB-117
c 5296
on 5296
2N5296
2N5294
ci 7411
2n 397
2n 394
esm 200
2n5298
w15C
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SFC2741DC
Abstract: sfc2741c sfc2741 SN72741P SF.C2741C SN72741 LM1307N SN72741L SN55471 LM1310
Text: C H UIICF OD r DK HÛ U INTERFAC E CIRCUITS INTEGRATED SERIES 3600 LAM P and POWER DRIVERS These 'mini-DIP' dual peripheral and power drivers are bi polar monolithic integrated circuits incorporating AND, NAND, OR, or NOR logic gates, high-current switching tran
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MIL-M-38510
MIL-STD-883,
ULN2289A
SFC2741C
SFC2741
ULN2151D
ULN2151M
T2741WV
ULN2151D
SFC2741DC
SN72741P
SF.C2741C
SN72741
LM1307N
SN72741L
SN55471
LM1310
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tda 3611
Abstract: RCA 3086 SFC2741C 3613m MC1310P sfc2741 SN76116 mc1305p 741TC sn75474p
Text: C H UIICF OD r DK HÛ U INTERFAC E CIRCUITS INTEGRATED SERIES 3600 LAM P and POWER DRIVERS These 'mini-DIP' dual peripheral and power drivers are bi polar monolithic integrated circuits incorporating AND, NAND, OR, or NOR logic gates, high-current switching tran
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MIL-M-38510
MIL-STD-883,
ULN2289A
SFC2741C
SFC2741
ULN2151D
ULN2151M
T2741WV
ULN2151D
tda 3611
RCA 3086
3613m
MC1310P
SN76116
mc1305p
741TC
sn75474p
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ef6800
Abstract: 68000 thomson
Text: O T H O M S O N -C S F SEMICONDUCTEURS S P E C IF IQ U E S T S 6 8 C 0 0 0 LOW POWER HCMOS 16/32 BIT MICROPROCESSOR DESCRIPTION The TS 68COOO reduced power consumption device dissipa tes an order of magnitude less power than the HMOS T3 68000. The T S 68COOO is an im plem entation o f the
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68COOO
68C000
16-bit
24-bit
32-bit
TS6800499
ef6800
68000 thomson
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P200A
Abstract: IC 4543
Text: TL16PNP200A STANDALONE PLUG-AND-PLAY PnP CONTROLLER S LLS 274A -A P R IL I9 9 7 -R E V IS ED MAY 1997 PnP Card Autoconfiguration Sequence Compliant Satisfies All Requirements for Qualifying for the Windows 95 Logo Supports up to Five Logical Devices Simple 3-Terminal Interface to Serial
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TL16PNP200A
24-Bit
16-Bit
ST93C56/66
P200A
IC 4543
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TS68C901BMC4
Abstract: TS68C901B 68C901B B 58 371 TS68C901BME8 901b chip motorola TS68C901BM TS68C901BMW4 TS68C901BMF8 TS68C901BMCB
Text: T S 6 8 C 9 0 1 B HCMOS MULTI FUNCTION PERIPHERAL DESCRIPTION The TS68C901B m u lti-fu n c tio n p e rip h e ra l CMFP is a member of the TS 68000 Fam ily o f peripheral and the CMOS version o f th e TS 68901. The CMFP d ire ctly interfaces to the TS 68000 processor fa m ily via an asynchronous bus
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TS68C901B
68C901B
TS68C901BMC4
B 58 371
TS68C901BME8
901b chip motorola
TS68C901BM
TS68C901BMW4
TS68C901BMF8
TS68C901BMCB
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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