thyristor st 103
Abstract: thyristor BT 200 Thyristor BT 102 BT 139 F applications note
Text: BT 1 5 1 -6 5 0 R ST AN DARD Glass Passivated thyristor in a plastic envelope, intended for use in application blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial, domestic lighting,heating and static switching.
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O-220AB
SC-46
thyristor st 103
thyristor BT 200
Thyristor BT 102
BT 139 F applications note
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BT thyristor
Abstract: teg thyristor thyristor bt 13 thyristor BT thyristor bt 13 g
Text: Contents Page G eneral A lphanum erical Index 4 Sym bols and Term s 8 IG B Ts IGBT 1 1 ,1 5 IGBT with D iode 1 1 ,1 5 IG BT B IM O S FE T 12 IG BT M odules 13 ISOSMART IG BT M odules 14 P o w er M O S FE Ts H iP erFE T 17 S tandard M O SFET 20 M O S FE T M odules
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thyristor TT 46
Abstract: thyristor TT 46 N
Text: SKKD 46 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Rectifier Diode Modules LMNO LMMO L BTT ^TT STT XATT XBTT X^TT L WTT @TT YTT XCTT XWTT X@TT N]]K W@HTW N]]K W@HT@ N]]K W@HTY N]]K W@HXC N]]K W@HXW N]]K W@HX@ XSTT XYTT N]]K W@HXY Features # $%&' ' & *+%( ',(-./, &0.12)2.1
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diac triac control 230V 5a
Abstract: working of fuse tube light by 4 diode SCR S6025L quadrac SOT953 BT 136 TRIAC electronics circuits 500w inverter circuits METAL HALIDE 400W VARISTOR 275 K20 VARISTOR 275 LA 20A
Text: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest Portfolio of Product Backed by Unparalleled Circuit Protection
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EC102
EC1102v1E0905
diac triac control 230V 5a
working of fuse tube light by 4 diode
SCR S6025L
quadrac
SOT953
BT 136 TRIAC
electronics circuits 500w inverter circuits
METAL HALIDE 400W
VARISTOR 275 K20
VARISTOR 275 LA 20A
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LT 0216 diode
Abstract: No abstract text available
Text: SGS-THOMSON MDS50 RiilD @lS il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES • VDr m =V rrm UP TO 1200 V = 35A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(rmS ■ It(AV) DESCRIPTION The MDS50 family are constitued of one rectifier
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MDS50
MDS50
LT 0216 diode
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136S6
Abstract: thyristor BT 161 triacs BT 412 BT thyristor T0252 BTA212-500D 136S-600F Triacs BTA208 600B BTA208 137B-800G
Text: Philips Semiconductors Power Thyristors and Triacs II TYPE NUMBER Index [TECHNOLOGY BR100/03 DIAC BT131-500 BT131-600 FOUR QUADRANT TRIACS BT132-500D BT132-600D FOUR QUADRANT TRIACS BT134-500 BT134-500D BT134-500E BT134-500F BT134-500G BT134-600 BT134-600D
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BR100/03
BT131-500
BT131-600
BT132-500D
BT132-600D
BT134-500
BT134-500D
BT134-500E
BT134-500F
BT134-500G
136S6
thyristor BT 161
triacs BT 412
BT thyristor
T0252
BTA212-500D
136S-600F
Triacs BTA208 600B
BTA208
137B-800G
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BT 816 triac
Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag
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2N6116
Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Text: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes
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b3b7255
2N6116
2N6117
2N6118
2n6116 motorola
Unijunction
motorola programmable unijunction
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thyristor BT 161
Abstract: No abstract text available
Text: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability
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Bulletin127092
thyristor BT 161
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HIGH VOLTAGE THYRISTOR fpr power
Abstract: P205CH06FJ0 westinghouse thyristor drive CS 370 thyristor TP205C P205CH
Text: UESTCODE SEMICONDUCTORS 3TE D • ’iTOTiSS OaQEbtl T ■ UESB T -Z S -3 lo f Technical Publication WESTCODE ® SEMICONDUCTORS TP205C Issue 2 March 1985 Inverter Grade Capsule Thyristor Type P205C 370 amperes average: up to 1200 volts V rrm/VDrm R a tin g s Maximum values at 125°C Tj unless stated otherwise
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P205C
TP205C
T0-200AB
HIGH VOLTAGE THYRISTOR fpr power
P205CH06FJ0
westinghouse thyristor drive
CS 370 thyristor
TP205C
P205CH
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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s6x8ts
Abstract: tHYRISTOR SCR 0.8A S6X8ES sot89 scr power thyristor S6X8BS S8X8TS2 BT 151 thyristor EIA-468-B JESD22-A101
Text: Teccor brand Thyristors Silicon Controlled Rectifiers SxX8xSx EV Series 0.8A Sensitive SCR Description New device series offers high static dv/dt and lower turn off tq sensitive SCR with its small die planar construction EFTJHO*UJTTQFDJmDBMMZEFTJHOFEGPS('$* (SPVOE'BVMU
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10Amps
OT-223)
OT-89)
OT-223
OT-89
s6x8ts
tHYRISTOR SCR 0.8A
S6X8ES
sot89 scr
power thyristor
S6X8BS
S8X8TS2
BT 151 thyristor
EIA-468-B
JESD22-A101
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MCR5167
Abstract: 2N5168 thyristor AT 505 S 12 2N5168-2N5171 2N5169 2N5171 motorola opto scr 2N5171 Scr 2N5170 MCR5166
Text: MOTOROLA SC DIODES/OPTO 3=iE » Q b3b75SS DOSSbbM fl 5 1 N O T ? T - X B ' - I S 2N 5168 thru 2N 5171 M C R 5164 thru M C R 5167 S ilic o n C o n tr o lle d R e ctifie rs R everse B lo ck in g T rio d e T h y risto rs . . . designed for industrial and consumer applications such as power supplies,
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b3b72SS
MCR5164,
2N5168
MCR5165,
2N5169
MCR5166,
2N5170
MCR5167,
2N5171
MCR5167
thyristor AT 505 S 12
2N5168-2N5171
motorola opto scr
2N5171 Scr
MCR5166
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skch26
Abstract: B1151 BH26 BH-26
Text: SEMIKRON INC 3bE » • fliabb?! OGGEfllb 3 ■ SEKG s e MIKRDn r r - Z 5 V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V SKBT 26/04 S K B H 26/04 S K C H 26/04 600 V S K B T 26/06 S K B H 26/06 S K C H 26/06 S K C H 27/06 800 V SKBT 26/08
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SKBT26
SKCH26
P1/120
00V/ps
50mA/15Q
B13bfa71
fil3bb71
SKYT35
M7-K16-5?
B1151
BH26
BH-26
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Effects of Temperature on Thyristor Performance
Abstract: ET 3005 AN4870 thyristor BT 200
Text: AN4870 Application Note AN4870 Effects Of Temperature On Thyristor Performance Application Note Replaces September 2000 version, AN4870-3.0 AN4870-3.1 July 2002 The junction temperature Tj of a power semiconductor in any particular situation profoundly affects its performance and
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AN4870
AN4870
AN4870-3
AN4840
Effects of Temperature on Thyristor Performance
ET 3005
thyristor BT 200
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applications of mos controlled thyristor
Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to
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SFS2326
Abstract: SFS2327 SFS2328 SFS2329 SPD5823 SPD5824 SPD5825 thyristor to5
Text: Preliminary Data SOLID STATE DEVICES INC eet 15E D 1 0 3 ^ 0 1 1 Q O O n S D ô I SFS2326 THRU SFS2329 SSDI 1.6 AMP SILICON CÜNTRÜLED RECTIFIER 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 200 - 400 VOLTS FEATURES
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SFS2326
SFS2329
200uA
D504V
SFS2327
SFS2328
SPD5823
SPD5824
SPD5825
thyristor to5
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16 amp SCR application
Abstract: SCR 214 s635 S525 scr 6 Ampere scr bt series 200 A SCR 75 Volts 10 amp heat sink of scr thyristor BT 200 thyristor BT
Text: bT HUTSON INDUSTRIES DE I 4 b 4 Ll7DD t | HUTSON INDUSTRIES » j PRESS FIT SERIES! SCR's 8 AMPERE CENTER GATE 10 AMPERE CENTER GATE 20 AMPERE CENTER GATE 25 AMPERE CENTER GATE 35 AMPERE CENTER GATE Hutson’s SCR’s feature proprietary, void-free glass passivated chips and are herm etically sealed to
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BT diode
Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,
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kluber
Abstract: KLUBER WOLFRACOAT C Thyristor BT 102 water cooled thyristor assembly kluber wolfracoat thyristor ys 150 017 NT102 295kW Thyristor ys 150 103 RC snubber thyristor design
Text: Technical Information Technische Erläuterungen Für schnelle Thyristoren wird hierzu empfohlen: - C, = 10.47 nF - R, entsprechend 7, = Fl, . C, = 1,0 . .2.0 ps - D, schnelle Diode Der Entladewiderstand R, darf niemals fehlen, weil sich sonst einige Daten der Thyristoren verschlechtern können, z.B. die kritische Spannungssteilheit dv/dt ,. Falls die Beschaltung den Verlauf des Steuerstroms nachteilig beeinflußt, so ist dies bei der Bemessung des
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ky 201 thyristor
Abstract: NT 101-2s thyristor s 1210 bh thyristor bt 136 DI 944 KD thyristor BT 143 SMBJ15A KD 502 BT 1690 SMBJ33CA
Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s SM BJ5.0 SÜBJ170CA S e r ie s Control over power 3.30-3.81 2.0 1- 4.01 5/4,57- f JI J0.76/1.27L .f(J 2.74 MECHANICAL DATA • Case: D0214AA molded plastic over glass passivated junction
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2n2646 equivalent
Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
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2N489-494â
2N2646-47â
2n2646 equivalent
2N2646
triac phase control
2N602B
2N4991
EQUIVALENT 2N1671
four-layer diode
SBS thyristor
2N4987
3n84
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SMD W2f
Abstract: w2f smd 290617 avx taj AVX film chip capacitors kbr kyocera ALY SMD mp Ceramic Disc Capacitors avx high power capacitor 40 pin X5R capacitor ceramic AVX
Text: Product Guide for C Consumer appiications The Complete list of Application Guides available: Automotive Consumer EDP High Rel and Military Industrial Mobile Communications Miscellaneous Products Network and Communications Security Telecommunications USA AVX Myrtle Beach, SC Corporate Offices
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TRIAC BT 812
Abstract: induction cooker schematic diagram schematic diagram inverter 2000w anti parallel scr firing circuit 2kw TRIAC dimmer control Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips construct and test a mosfet based pwm chopper circuit free philips igbt induction cooker BT151 motor speed control
Text: Thyristors and Triacs Power Semiconductor Applications Philips Semiconductors CHAPTER 6 Power Control with Thyristors and Triacs 6.1 Using Thyristors and Triacs 6.2 Thyristor and Triac Applications 6.3 Hi-Com Triacs 485 Thyristors and Triacs Power Semiconductor Applications
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