Thyristor ys 150 105
Abstract: M5 DIODE Thyristor ys 150
Text: 5 ; » • 9f T ‘ ?k SCR Inverters International I%2R Rectifier Thyristor/Diode, Fast Doubler Circuii Positive Control INT-A-Pak 1RKH FI02-12 1200 105 105 90 2400 :5oo 20 and 25 0.085 2 14 I 7 87097 IRKH F102-06 600 105 105 90 2400 2500 20 and 25 0 085
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FI02-12
F102-06
1RKHF102-08
FI32-04
F152-04
HF152-08
JRKHF72-06H
F82-04H
HF82-08H.
00V/ps
Thyristor ys 150 105
M5 DIODE
Thyristor ys 150
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Untitled
Abstract: No abstract text available
Text: PIXYS Phase Control Thyristor CS 630 ITRM Ss =1400A I' = 630 A VRRM = 1200-1600 V tavm Type 3 4 1200 1400 1600 1200 1400 1600 Symbol CS 630-12io1 CS 630-14io1 CS 630-16io1 Maximum Ratings Test Conditions 1400 630 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine
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630-12io1
630-14io1
630-16io1
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Untitled
Abstract: No abstract text available
Text: •Avalanche Diodes T a = 2 5 'C Absolute M axim um Ratings Vnt IZSM Type No. H ‘ IV ) instantaneous 40 IR IH1H 1 F lft is iA ( >* A) t^ A ) No. 130 RY 23 ^00 RY 24 400 " Instantaneous max max 1 Ps 5 60 to 70 135 to 180 4u to+ i 50 (V) 227 300 10 50
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ac08m
Abstract: No abstract text available
Text: MOTOROLA Order this document by MAC08MT1/D SEMICONDUCTOR TECHNICAL DATA MAC08MT1 S O T -223 Triac Motorola preferred device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in
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MAC08MT1/D
MAC08MT1
318E-04
OT-223)
ac08m
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triode rn 1016
Abstract: 2N1778A thyristor st 103
Text: Discrete Semiconductors C10 Series: 2N1770A-2N2619A Semitronics Phase Control SCR 4.7 Amps 125-600 Volts Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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2N1770A-2N2619A
MIL-PRF-19500/168
2N1770A
triode rn 1016
2N1778A
thyristor st 103
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R0633YS
Abstract: r0633ys12d R0633 j750a r0633ys10x12x Thyristor 12kV 10 kA
Text: WESTCODE Date:- 25 Jun, 2001 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0633YS10x to R0633YS12x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS 1000-1200 V VDRM Repetitive peak off-state voltage, note 1 VDSM Non-repetitive peak off-state voltage, (note 1)
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R0633YS10x
R0633YS12x
R0633YS12x
R0633YS
r0633ys12d
R0633
j750a
r0633ys10x12x
Thyristor 12kV 10 kA
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v105
Abstract: 16S90 tsr 002
Text: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / Features Electrically Isolated: DBC base plate • ■ ■ ■ 350 0 V RMS Isolating voltage Standard JED E C package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals or wiring convenience
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ULE78996
27K/W
IRKU/V105
20ohrro
v105
16S90
tsr 002
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Untitled
Abstract: No abstract text available
Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1N5629 + Series 1N5865A C 3 Y 3 0 M Control overpower ri k 1T 31.8 min. ¡1{5 .33 max. -» 7.5 9.0 25.4 min. l _I Smisibla PnxtèectSon MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): 1500 watts
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1N5629
1N5865A
10X1000
X10-1
1N56SEFJE5
500pcs)
1000pcs)
1N5629
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2082f3
Abstract: Thyristor ys 150 105 Thyristor ys 130
Text: TISP2072F3, TISP2082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS 3JSE03 • MARCH IW4 •REVISED SETOMBER 1994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE
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TISP2072F3,
TISP2082F3
3JSE03
2072F3
2082F3
FTZR12
IXK17
PE-60
Thyristor ys 150 105
Thyristor ys 130
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skpt* 38
Abstract: 3082f3
Text: TISP3072F3, TISP3082F3 DUAL. SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SUSEOg - MARCH 1994 •REVISED SKPTCMBER 199* TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
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TISP3072F3,
TISP3082F3
3072F3
3082F3
FTZR12
VDE0433
IXK17
PE-60
skpt* 38
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3320F
Abstract: LTSP
Text: TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS _ SIWtlQ • MARCH I9»l REVISED SEPTEMBER |WJ TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region
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TISP3240F3,
TISP3260F3,
TISP3290F3,
TISP3320F3,
TISP3380F3
3240F3
3260F3
3290F3
3320F3
3380F3
3320F
LTSP
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function Wave Generator sawtooth
Abstract: skpt* 38
Text: TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS HU-SHH - SKPTgMSHi m i - REVISED SEPTEMBER 1W4 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
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TISP1072F3,
TISP1082F3
1072F3
1082F3
PE-60
function Wave Generator sawtooth
skpt* 38
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HSP1072F3
Abstract: dual Symmetrical Transient Voltage Suppressors
Text: HSP1072F3, HSP1Q82F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rtjftt0 1997. Powgr Innovation» Limited. UK SEPTEMBER 1993 - REVISED SEPTEMBER 1987 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • ton-4mptonted Breakdown Region D PACKAQE TOP View
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HSP1072F3,
HSP1Q82F3
1072F3
FTZR12
VDE0433
K17/K20
PE-60
HSP1072F3
dual Symmetrical Transient Voltage Suppressors
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T1SP4180f3
Abstract: T1SP4180 4150F3
Text: TISP4125F3, TI8P4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS _ SLPSE13 - MARCH 1994 - REVISED SEPTEMBER I W TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
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TISP4125F3,
TI8P4150F3,
TISP4180F3
SLPSE13
4125F3
4150F3
4180F3
RLM88
T1SP4180f3
T1SP4180
4150F3
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IPM module lg
Abstract: diode gi 9300 irf 5110 ScansUX7 D183 D184 D185 HALF WAVE 45 E 57 20-C1V D187 D188
Text: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e
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30ohms.
65ohms
IPM module lg
diode gi 9300
irf 5110
ScansUX7
D183
D184
D185
HALF WAVE 45 E 57 20-C1V
D187
D188
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thyristor YS 160 004
Abstract: HIGH VOLTAGE THYRISTOR D183 D184 D185 D186 D187 D188 irf 940 lem current lt 100
Text: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e
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30ohms.
65ohms
thyristor YS 160 004
HIGH VOLTAGE THYRISTOR
D183
D184
D185
D186
D187
D188
irf 940
lem current lt 100
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Untitled
Abstract: No abstract text available
Text: T1SP2240F3, TISP2260F3, T1SP2290F3, TISP2320F3, TISP23S0F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C opyn ÿil 0 1997, Power Innovatori» Limited, UK_ M ARC H 1994 - R E V IS E D SE P T E M B E R 1897 TELECO M M U N IC ATIO N SY ST E M SEC O N O A R Y PRO TEC TIO N
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T1SP2240F3,
TISP2260F3,
T1SP2290F3,
TISP2320F3,
TISP23S0F3
2240F3
2260P3
2290F3
2360F3
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electromatic s system sv 115 230
Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Text: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo gues. This innovation should facilitate your survey of our entire
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Untitled
Abstract: No abstract text available
Text: TISP224QF3, TISP2260F3, TISP2290F3, TISP2320F3, TK DUAL SYMMETRICAL TR VOLTAGE SUPPR MARCH 1994 - REVISED SSI TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage
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TISP224QF3,
TISP2260F3,
TISP2290F3,
TISP2320F3,
2240F3
2290F3
2320F3
Z38QF3
a/20M
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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ZNR14K201U
Abstract: znr14k201 ZNR14K star delta auto trans wiring diagram ERZ-C14DK201V thyristor 6-pulse full wave firing circuit znr14 ERZC14DK201 TB118 AC drives regenerative braking circuits diagram
Text: ALLEN-BRADLEY Instruction Manual Bulletin 1370 DC Drive Module Series B Price: S25.00 Because of the variety o f uses for this equipm ent ana because o f the differen ces b etw een this solid state equipm ent and electrom echanical equipm ent, th e user of
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ATS 2501
Abstract: zener diode reference guide sanken UX-F5B MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FML-32S-T B 2306 BARRIER RECTIFIER fmgg2c diode RBV-406M FMUG2F RU3C
Text: Bulletin No. D01EE0 Sep., 2002 SILICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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D01EE0
H1-D01EE0-0209020TA
ATS 2501
zener diode reference guide
sanken UX-F5B
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
FML-32S-T
B 2306 BARRIER RECTIFIER
fmgg2c
diode RBV-406M
FMUG2F
RU3C
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FMPG2F
Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Text: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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D01ED0
SFPJ-63
VR-60SS
SFPJ-73
VR-61SS
SFPL-52
SFPL-62
SFPM-52
FMPG2F
zener diode reference guide
diode MARKING 30J
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
diode hvr 1x
FMB-34M
sot23 3F mark
fmlg12
RBV SOT23
marking code RBV SOT23
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HVR-1X 7 diode
Abstract: hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B
Text: CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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SFPB-66
SFPB-69
SFPB-72
SFPB-74
VR-60SS
SFPB-76
VR-61SS
HVR-1X 7 diode
hvr 1X 3 diode
HVR-1X 7
FMPG2F
HVR-1X diode
HVR-1X 6 diode
HVR-1X -7
HVR-1X 6
fmp2fu
RBA-404B
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