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    TI NPN MEDIUM POWER TRANSISTOR Search Results

    TI NPN MEDIUM POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TI NPN MEDIUM POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJE521

    Abstract: MJE3521 511-MJE521 je521 MJE521K MJE371K mje521 npn MJES21 MJE3371 MJE371
    Text: MJE521 S I L I C O N MJE521K MJE3521 PLASTIC MEDIUM-POWER NPN SILICON TRANSISTORS 4 AMPERE POWER TRANSISTORS NPN SILICON . . . designed fo r use in general-purpose a m plifier and switching circuits. Recommended fo r use in 5 to 20 W att audio am plifiers u ti­


    OCR Scan     		MJE521 MJE521K MJE3521 MJE521, MJE3521 MJE371, MJE371K MJE3371 MJE521 511-MJE521 je521 mje521 npn MJES21 MJE3371 MJE371 PDF

    Untitled

    Abstract: No abstract text available
    Text: mi it ti mi S E M E 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE F0R HIGH RELIABILITY APPLICATIONS m e c h a n ic a l d a t a Dimensions " inches FEATURES • SILICON PLANAR EPITAXIAL NPN


    OCR Scan     		2N2222ACSM 2N2222A 150mA ai33ia? PDF

    MJE520

    Abstract: JE520 CASE 77 MJE3520 MJE370 MJE520K mje3 MJE3370 MJE370K 20 watt audio amplifier
    Text: MJE520 SILICON MJE520K MJE3520 3 AMPERE POWER TRANSISTORS PLASTIC MEDIUM-POWER NPN SILICON TRANSISTORS NPN SILICON 30 VO LTS 2 5 and 4 0 W A T T S . . . designed for use in general-purpose am plifier and switching circuits. Recommended fo r use in 5 to 10 W att audio am plifiers u ti­


    OCR Scan     		MJE520 MJE520K MJE3520 MJE520, MJE3520 MJE370, MJE370K MJE3370 MJE520 JE520 CASE 77 MJE370 mje3 MJE3370 20 watt audio amplifier PDF

    FZT688B

    Abstract: FZT788B DSA003713
    Text: SOT223 NPN SILICON PLANAR MEDIUM FZT688B POWER HIGH GAIN TRANSISTOR ISSUE 3- OCTOBER 1995 FEATURES I ! I I RCE ,ti 83mQ at 3A low equivalent on resistance; ‘ Extremely ‘ Gain of 400 at IC=3 Amps and very low saturation voltage c, APPLICATIONS * Flash gun convertors & Batte~


    Original     		OT223 FZT688B FZT788B 50MHz FZT688B FZT788B DSA003713 PDF

    BDL31

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification NPN medium power transistor FEATURES BDL31 PINNING • High current max. 5 A PIN DESCRIPTION • Low voltage (max. 10 V) 1 • Low collector-emitter saturation voltage ensures reduced power dissipation. 2


    OCR Scan     		BDL31 OT223 BDL32. OT223) BDL31 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). 1 APPLICATIONS DESCRIPTION emitter 2 collector 3 base • General purpose switching and amplification


    OCR Scan     		BC869. BC868 BC868-10 BC868-16 BC868-25 BC868 BC868-25 PDF

    BFY52

    Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips
    Text: Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51 ; BFY52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 35 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • General purpose industrial applications.


    OCR Scan     		BFY50; BFY51 BFY52 BFY50 BFY51 BFY52 BFY50-BFY51 BFY51 philips PDF

    ti NPN medium power transistor

    Abstract: bf199 transistor NPN BF199 bf199 transistor
    Text: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES BF199 PINNING • Low current max. 25 mA PIN • Low voltage (max. 25 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Output stage of a vision IF amplifier.


    OCR Scan     		BF199 ti NPN medium power transistor bf199 transistor NPN BF199 bf199 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING • Low current max. 500 mA PIN DESCRIPTION • Low voltage (max. 80 V). 1 2 base APPLICATIONS 3 collector, connected to case emitter • High performance amplifiers


    OCR Scan     		2N1893 PDF

    marking 603 npn transistor

    Abstract: marking HA 7 sot23
    Text: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES BFS20 PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS


    OCR Scan     		BFS20 MAM255 marking 603 npn transistor marking HA 7 sot23 PDF

    BF370

    Abstract: transistor BF370
    Text: Philips Semiconductors Product specification NPN medium frequency transistors FEATURES BF370; BF370R PINNING • Low current max. 100 mA PIN • Low voltage (max. 15 V). DESCRIPTION PIN BF370 APPLICATIONS • IF pre-amplifiers of television receivers. DESCRIPTION


    OCR Scan     		BF370; BF370R BF370 BF370 transistor BF370 PDF

    TRANSISTOR D16

    Abstract: No abstract text available
    Text: Die no. D-16 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at 1.0 mA


    OCR Scan     		OT-23) SSTA06 TRANSISTOR D16 PDF

    transistor 2N4401

    Abstract: 2n4401 die
    Text: Die no. C-31 NPN medium power transistor Dimensions Units : mm These epitaxial planar NPN silicon transistors are gold doped. TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVceo = 40 V (min) at


    OCR Scan     		2N4401 PN2222A transistor 2N4401 2n4401 die PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP31A/31C TI P32 A/32 B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented


    OCR Scan     		TIP31A/31C B/32C TIP31A TIP31C O-220 TIP32A TIP32C TIP32B PDF

    Marking R1P

    Abstract: r1p 11 TRANSISTOR R2X SOT23 sst2222a R1P SOT-223
    Text: Die no. C-31 NPN medium power transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • 0.951 f 1' 0.45±0.1 l.9±0.2 available in the following packages: |0.9S^0,tej L — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59)


    OCR Scan     		OT-23) SC-59) OT-323) OT-89) Marking R1P r1p 11 TRANSISTOR R2X SOT23 sst2222a R1P SOT-223 PDF

    mje340

    Abstract: mje350 mje340 transistor mje350 transistor MJE340-MJE350 MJE-350 TRANSISTOR MJE350 TRANSISTOR MJE340 MJE-340
    Text: MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN transistor intended for use in medium power


    OCR Scan     		MJE340 MJE350 OT-32. MJE350. OT-32 MJE350 300ns, mje340 transistor mje350 transistor MJE340-MJE350 MJE-350 TRANSISTOR MJE350 TRANSISTOR MJE340 MJE-340 PDF

    2N4033

    Abstract: No abstract text available
    Text: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.


    OCR Scan     		2N3019 2N3019, 2NJ020 2N4033» 2N4031. 2N3020 800mW 200OC 150mA VCE-10V 2N4033 PDF

    transistor ai 757

    Abstract: bF240 transistor AN 6752 philips BF240 philips
    Text: DISCRETE SEMICONDUCTORS 1999 Apr 21 Product specification Supersedes data of 1998 Dec 02 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING • Low current max. 25 mA


    OCR Scan     		BF240 SCA63 5002/00/04/pp8 transistor ai 757 bF240 transistor AN 6752 philips BF240 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BDP31 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V).


    OCR Scan     		BDP31 OT223 BDP32. MAM287 OT223) 115002/00/03/pp8 PDF

    TPS71733DCK

    Abstract: OMAP-L138 TMS320C6742 TMS320C6746 TMS320C6748 TMS320C6748 dsp schematic
    Text: Application Report SLVA343 – June 2009 Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO Ambreesh Tripathi . PMP - DC/DC Low-Power Converters ABSTRACT This reference design is intended for users designing with the TMS320C6742,


    Original     		SLVA343 TMS320C6742, TMS320C6746, TMS320C6748, OMAP-L138 TPS71733DCK TMS320C6742 TMS320C6746 TMS320C6748 TMS320C6748 dsp schematic PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 08 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 FEATURES PINNING • High current max. 1 A


    OCR Scan     		BCP54; BCP55; BCP56 OT223 BCP51, BCP52 BCP53. BCP54 BCP55 PDF

    transistors ai 757

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BSP41 ; BSP43 NPN medium power transistors Product specification Supersedes data of 1997 Sep 05 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BSP41 ; BSP43


    OCR Scan     		BSP41 BSP43 OT223 BSP31 BSP32 BSP33. MAM287 OT223) transistors ai 757 PDF

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


    OCR Scan     		BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y iI T BCP68 NPN medium power transistor Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES


    OCR Scan     		BCP68 OT223 BCP69. MAM287 OT223) 115002/00/03/pp8 PDF