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    TIC 136 D Search Results

    TIC 136 D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions

    TIC 136 D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: , Ltna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF342 SILICON POWER NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-220AB MRF342 is designed for VHP amplifier applications operating to 150MHz.


    Original     		MRF342 O-220AB MRF342 150MHz. PDF

    transistor BD 141

    Abstract: No abstract text available
    Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126


    OCR Scan     		BD136. BD138, BD140 6235bQS BD138. transistor BD 141 PDF

    CPT60050

    Abstract: CPT60060
    Text: S c h o t t k y Powerl Vloc c V V D" f60050 Baseplate A=Common Anode Baseplate Common Cathode u t" 1 1 H h 1 1 -1 — / w F u \ — r , I- t °-N - _ L ' - I il- I Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Working Peak


    OCR Scan     		r60050 r60060 CPT60050 CPT60060 PDF

    301CNQ035

    Abstract: 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT
    Text: S c h o ttk y Powerl vi oc D • c D ” r30035 ¥ ¥ Baseplate A=Common Anode Baseplate Common Cathode u *"1 I I H -I— I / u H h °-N—j —H -° I c \l I \ h - 1— 1- Baseplate D=Doubler -I Notes: Baseplate: Nickel plated copper Microsemi Catalog Number


    OCR Scan     		r30035 r30050 301CNQ035 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT PDF

    FST19035

    Abstract: FST19040 FST19045 FST19050
    Text: Low Vf S c h o tt k y Powermod FST19035 - FST19050 Dim. Inches Max. Min. 1 2 3 Common Cathode m 1 2 3 A=Common Anode 0 6 0 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper Microsemi Catalog Number Working Peak


    OCR Scan     		FST19035 FST19050 FST19035* FST19040* FST19045* FST19050* FST19040 FST19045 FST19050 PDF

    CPT60050

    Abstract: CPT60060
    Text: Schottky PowerMod CPT60050 - ¥ Baseplate A=Common Anode V 1 -1 1 H U 1 “ I- h r Baseplate Common Cathode 1 i i F u M f- i , — r n -|A [- ° N | W ° Baseplate D=Doubler CPT60060 Dim . In ch es Min. A B C E F G H N Q R U V W Max. -3.630 0.700


    OCR Scan     		CPT60050 CPT60060 CPT60050* CPT60060* CPT60050 CPT60060 PDF

    301CNQ035

    Abstract: 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT
    Text: Schottky PowerMod CPT30035 V Baseplate A=Common Anode V Baseplate Common Cathode u — 1 / T É | - r 1 \ ! / '\l °N | W ° 1 1 c ! T T E Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry P art Number Working Peak


    OCR Scan     		CPT30035 CPT30050 CPT30035* 301CNQ035 301CNQ035 301CNQ040 301CNQ045 CPT30040 CPT30045 CPT30050 MBRP30045CT PDF

    R3003

    Abstract: FST30035 FST30040 FST30045 FST30050
    Text: S c h o tt k y Pow erMcx FS1f30035 FS1r30050 Dim. Inches V Baseplate A=Common Anode V Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher °N | W ° Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29


    OCR Scan     		r30035 r30050 1/4-20UNC T0-244AB FST30035* FST30040* FST30045* FST30050* 1000E R3003 FST30035 FST30040 FST30045 FST30050 PDF

    Untitled

    Abstract: No abstract text available
    Text: & 9-BIT MAGNITUDE COMPARATOR SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 1400 ps Max. Propagation Delay. The SY10E/100E/101E166 is a 9-bit magnitude comparator designed for use in new, high performance ECL systems. The E166 compares the binary value of two 9-bit words and indicates


    OCR Scan     		SY10E/100E/101E166 SY100E166: SY101E166: SY100/101E166 PDF

    FPT131

    Abstract: FPT100A FPT100 FPT100B FPT101 FPT110 FPT110A FPT110B FPT120 FPT120A
    Text: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,


    OCR Scan     		FPT100 FPT100A FPT100B FPT101 FPT110 FPT110A TTL1/6-9016 FPT131 FPT110B FPT120 FPT120A PDF

    TIC 138

    Abstract: anzac termination insensitive mixer ts.228 tic 208 tic 136 tic 122 tic 234
    Text: TABLE OF CONTENTS Cantenis G e n e ra l page Product Section F in d e r. 1 Company In tro d u c tio n . 4


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V37 4 2 A 3 .7 —4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 3 7 4 2 A is a n in te m a lly im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 3 .7 ~ 4 .2


    OCR Scan     		FC39V37 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD 55E D 7^^0741 GÜDIBIM TT5 « S A K J vj LA4070 Silicon PNP Epitaxial Planar Darlington •Maximum Ratings Hem T a = 25°C Symbol Ratings Unit C o lle c to r-to -B a s e V o lta g e VCBO -1 0 0 V C o lle c to r-to -E m itte r V o lta g e


    OCR Scan     		LA4070 STA300 STA400 45max PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S


    OCR Scan     		MSM38S0000/MSM98S000 MSM38S MSM98S 16-Mbit 38S/98S 44x44 35x35 28x28 33x33 38x38 PDF

    AFY42

    Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
    Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in


    OCR Scan     		AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B PDF

    S30760

    Abstract: R30720 R30740 R30760 S30720 S30740
    Text: Silicon Power Rectifier S /R 3 0 7 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity. Stud is anode P A B C D E F G H J K M


    OCR Scan     		S/R307 D0203AB S30720 R30720 S30740 R30740 S30760 R30760 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Power Rectifier S/R307 Series Dim. Inches if1II1 f/r-æ-i - -1 Ï ' - C- 1 J h r>iO i K J _L L Jü il J Millimeter Minimum Maximum Minimum Maximum Notes i n i A F t ' E Notes: 1. 1 /4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity;


    OCR Scan     		S/R307 D0203AB Micros200 S/R307 PDF

    Untitled

    Abstract: No abstract text available
    Text: TM S 3126, 3127, 3128, 3129, 3130, 3131, 3132 LC. NC D U A L 96-, 100-, 128-, 132-, 133-, 136-, 144-BIT STATIC S H IFT R EG ISTER S M OS LSI B U L L E T I N N O . D L -S 7 5 1 2 2 6 3 , M A Y 1 9 7 5 D C to 2 .5 -M H z Operation TO -99 H E R M E T IC A L L Y S E A LE D PACKAGE


    OCR Scan     		144-BIT PDF

    S30760

    Abstract: R307 530740 R30720 R30740 R30760 S30720 S30740
    Text: Silicon Power Rectifier S/ R 3 0 7 Seríes Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 /4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity: Stud is anode p A B C D E F G H J K M


    OCR Scan     		S/R307 D0203AB S30720 R30720 S30740 R30740 S30760 R30760 R307 530740 PDF

    5817SMG

    Abstract: 5818SMG 5819SMG D0215AA
    Text: 1 Amp Schottky Rectifier 5817SMG - 5819SMG CATHODE BAR Dim. Inches Minimum M illim e te r Maximum Minimum Maximum Notes □ > -o - 1 1 .081 .160 .130 .077 .234 A B C D E 1 » m -O h .087 .180 .155 .104 .256 2.06 4.06 3.30 1.95 5.95 2.21 4.57 3.94 2.64 6.50


    OCR Scan     		5817SMG 5819SMG D0215AA 5818SMG 5819SMG 5818SMG D0215AA PDF

    transistor bd 126

    Abstract: bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136
    Text: B D 136 B D 138 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S P N P S IL IC IU M , P L A N A R Compì, of BD 135, 6D 137 PRELIM INARY DATA N O T IC E P R E L I M IN A I R E These transistors are intended for a wide variety of medium power complementary symetry appli­


    OCR Scan     		135/BD 137/BD deh31E 136ouBD 300/is transistor bd 126 bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136 PDF

    D0215AA

    Abstract: 5817SMG 5818SMG 5819SMG
    Text: 1 Amp Schottky Rectifier 5817SMG - 5819SMG -CATHODE BAR Dim. Inches • 3> I - o - I Minimum .081 .160 .130 .077 .234 A B C D E — D>K M illim eter Maximum Minimum .087 .180 .155 .104 .256 Maximum Notes 2.06 4.06 3.30 1.95 5.95 2.21 4.57 3.94 2.64 6.50 D0215AA


    OCR Scan     		D0215AA 5817SMG 5818SMG 5819SMG D0215AA PDF

    B66276-B1011-T1

    Abstract: tic 122 tic 272 B66274-B1012-T1 B66274B1002T1 B66278-B1001-T1 B66278 B66278-B1002-T1 B66278B2001 B66272J1013T1
    Text: EC Cores Example of an assem bly set Yoke a - Sheet-steel screw FEK 0 0 r-X Mounting dimensions of the assembly set mm C o r e ty p e L e n g th x w id th x h e ig h t 1'f E C 35 47 E C 41 5 2 .5 x 4 7 , 5 x 4 2 4 7 .5 x 4 2 x 44


    OCR Scan     		B66278-B1001-T1 B66278-B1002-T1 B66278-B1011-T1 B66278-B2001 B66278-B2002 B66276-B1011-T1 tic 122 tic 272 B66274-B1012-T1 B66274B1002T1 B66278 B66278B2001 B66272J1013T1 PDF

    7400N

    Abstract: 2 input nand gate 24v D1113 FJH131 FJHI36 6400N FIH131 FJH131A FJH136 2 input nor gate 24v
    Text: T.T.L. QUADRUPLE 2-INPUT NAND GATES Correspond to 74 Series types 7400N, 6400N FIH13 1 FJHI3IA FJHI36 T ENTATIVE DATA T h e s e d e v ic e s a r e t r a n s i s t o r - t r a n s i s t o r lo g ic q u a d ru p le 2 -in p u t NAND g a te s in th e F J s e r i e s of in te g r a te d c i r c u i t s . T h e F JH 131 c o r r e s p o n d s to '7 4 S e r i e s 't y p e 7400N,


    OCR Scan     		FIH131 7400N, 6400N FJHI36 FJH131 FJH136 6400N. FJH131/1A 7400N 2 input nand gate 24v D1113 FJHI36 FIH131 FJH131A 2 input nor gate 24v PDF