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    TIM091 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TIM0910-15L

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    Quest Components TIM0910-15L 7
    • 1 $1274.0735
    • 10 $1092.063
    • 100 $1092.063
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    EBV Elektronik TIM0910-15L 143 Weeks 1
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    Toshiba America Electronic Components TIM0910-8

    Trans RF FET NCH 15V 104A 211C1B (Alt: TIM0910-8)
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    EBV Elektronik TIM0910-8 143 Weeks 1
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    Toshiba America Electronic Components TIM0910-5

    (Alt: TIM0910-5)
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    EBV Elektronik TIM0910-5 143 Weeks 1
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    Toshiba America Electronic Components TIM0910-2

    MICROWAVE POWER GaAs FET 15V 26A 3Pin 29D1B (Alt: TIM0910-2)
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    EBV Elektronik TIM0910-2 143 Weeks 1
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    Toshiba America Electronic Components TIM0910-4

    MICROWAVE POWER GaAs FET 15V 52A 3Pin 29D1B (Alt: TIM0910-4)
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    EBV Elektronik TIM0910-4 143 Weeks 1
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    TIM091 Datasheets (14)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    TIM0910-10 Toshiba Microwave Power GaAs FET Scan PDF
    TIM0910-10 Toshiba FET, Microwave Power Gaas FET Scan PDF
    TIM0910-15 Toshiba IC FET MISC 3(2-11C1B) Scan PDF
    TIM0910-15L Toshiba TIM0910 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, JFET, 2-11C1B, 2 PIN, FET RF Power Original PDF
    TIM0910-15L Toshiba Microwave Power GaAs FET Scan PDF
    TIM0910-15L Toshiba FET, Microwave Power GaAs FET Transistor, ID 11.5 A Scan PDF
    TIM0910-2 Toshiba FET, Microwave Power GaAs FET Transistor, ID 2.6 A Original PDF
    TIM0910-2 Toshiba TIM0910 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM0910-20 Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM0910-4 Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM0910-4 Toshiba FET, Microwave Power GaAs FET Transistor, ID 5.2 A Original PDF
    TIM0910-5 Toshiba FET, Microwave Power GaAs FET Transistor, VID 5.7 A Original PDF
    TIM0910-8 Toshiba FET, Microwave Power GaAs FET Transistor, ID 10.4 A Original PDF
    TIM0910-8 Toshiba TIM0910 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power Original PDF

    TIM091 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000


    OCR Scan     		TIM0910-15L 30dBm 145mA 2-11C1B) PDF

    TIM0910-20

    Abstract: No abstract text available
    Text: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC


    OCR Scan     		TIM0910-20 2-11C1B) TIM0910-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-10 2-11C1B) MW50050196 PDF

    TIM0910-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM0910-2 MW50010196 TIM0910-2 PDF

    TIM0910-10

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-10 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=40.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=6.0 dB at 9.5 GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM0910-10 TIM0910-10 PDF

    TIM0910-20

    Abstract: No abstract text available
    Text: TOSHIBA M ICROW AVE MICROWAVE SEMICONDUCTOR POW ER G aA s TIM0910-20 TECHNICAL DATA FEATURES: • HIGH POWER BROAD BAND IN TE R N A LL Y MATCHED P id B = 43. 5 d Bm at 9. 5GHz to 10. 5GHz ■ HIGH G AIN ■ H E R M E TIC A LLY SEALED PACKAGE G i d B = 6.0 dB at 9.5GHz to 10.5GHz


    OCR Scan     		TIM0910-20 TIM0910-- TIM0910-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G 1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-2 TransconductaMW50010196 MW50010196 TIM0910-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-5 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM0910-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-15 TECHNICAL DATA FEATURES : • HIGH POWER BROAD BAND INTERNALLY M ATCHED PidB ■ 42.0 dBm at 9.5 G H z to 10.5 GHz HIG H GAIN ■ HERMETICALLY SEALED PACKAGE G 1dB = 7.0 dB at 9.5 G H z to 10.5 G Hz


    OCR Scan     		TIM0910-15 M0910-15--------------------------------- 2-11C1B) PDF

    5Ghz

    Abstract: No abstract text available
    Text: TOSHIBA MICROW AVE POWER OaAs MICROWAVE SEMICONDUCTOR TIM0910—20 TECHNICAL DATA FEATURES: • HIGH POWER BROAD BAND INTERNALLY MATCHED P id B = 43. 5 dBm at 9. 5GHz to 10. 5GHz HIGH GAIN ■ HERMETICALLY SEALED PACKAGE G ld B = 6 .0 dB at 9.5GHz to 10. 5GHz


    OCR Scan     		TIM0910-- TIM0910-20 5Ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA UNIT dBm MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000 MAX. 4.5 5.5 +/-0.8 — UNIT mS MIN. V -1.5 Ö RF PERFORMANCE SPECI ICATIONS Ta=25°C


    OCR Scan     		TIM0910-15L 30dBm 2-11C1B) PDF

    TIM0910-4

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS


    Original     		TIM0910-4 TIM0910-4 PDF

    TIM0910-8

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS


    Original     		TIM0910-8 TIM0910-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA M ICROW AVE POWER QaAs F MICROWAVE SEMICONDUCTOR TIM0910-20 TECHNICAL DATA FEATURES: • H IG H POWER P id B = 43. 5 dBm at 9. 5GHz to 10. 5GHz H IG H G A IN G id B = 6 .0 dB at 9.5GHz to 10.5GHz B R O A D BAND IN T E R N A L L Y M A TC H ED ■ H E R M E T IC A L L Y S E A LE D PACKAGE


    OCR Scan     		TIM0910-20 2-16G1B) TIM0910â DISS1PAT10N PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-15 TECHNICAL DATA FEATURES : • HIGH POW ER BROAD BAND INTERNALLY MATCHED PidB ■ 42.0 dBm at 9.5 G H z to 10.5 GHz HIG H GAIN ■ HERMETICALLY SEALED PACKAGE GidB = 7.0 dB at 9.5 G H z to 10.5 G Hz


    OCR Scan     		TIM0910-15 2-11C1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM0910-2 PDF

    TIM0910-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM0910-4 MW50020196 TIM0910-4 PDF

    TIM0910-20

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-20 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=43.0dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM0910-20 TIM0910-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM0910-10 MW50050196 2-11C1B) PDF

    TIM0910-5

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-5 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 9.5GHz to 10.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS


    Original     		TIM0910-5 TIM0910-5 PDF

    TIM0910-15L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.0dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM0910-15L TIM0910-15L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM0910-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-4 MW50020196 TIM0910-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM0910-5 MW50030196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM0910-4 TECHNICAL DATA FEATURES : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE p idB = 36.5 dBm at 9.5 GHz to 10.5 GHz ■ HIGH GAIN G-icjb = 7.5 dB at 9.5 GHz to 10.5 GHz


    OCR Scan     		TIM0910-4 TIM0910-4-------------------POWER TIM0910-4 PDF