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Microchip Technology Inc PIC24FJ64GP205T-I-M4 IC MCU 16BIT 64KB FLASH 48UQFN
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DigiKey	PIC24FJ64GP205T-I-M4	Digi-Reel	5,700		1	1 $2.12 10 $2.12 100 $2.12 1000 $2.12 10000 $2.12	Buy Now
	PIC24FJ64GP205T-I-M4	Cut Tape	5,700		1	1 $2.12 10 $2.12 100 $2.12 1000 $2.12 10000 $2.12	Buy Now
	PIC24FJ64GP205T-I-M4	Reel	3,300		3,300	1 - 10 - 100 - 1000 - 10000 $1.77001	Buy Now
Microchip Technology Inc PIC24FJ32GU205T-I-M4 IC MCU 16BIT 32KB FLASH 48UQFN
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DigiKey	PIC24FJ32GU205T-I-M4	Reel	3,300		3,300	1 - 10 - 100 - 1000 - 10000 $1.90001	Buy Now
	PIC24FJ32GU205T-I-M4	Digi-Reel	3,300		1	1 $2.29 10 $2.29 100 $2.29 1000 $2.29 10000 $2.29	Buy Now
	PIC24FJ32GU205T-I-M4	Cut Tape	3,300		1	1 $2.29 10 $2.29 100 $2.29 1000 $2.29 10000 $2.29	Buy Now
Microchip Technology Inc DSPIC33CK128MP205T-I-M4 IC MCU 16BIT 128KB FLASH 48UQFN
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DigiKey	DSPIC33CK128MP205T-I-M4	Cut Tape	3,300		1	1 $3.7 10 $3.7 100 $3.7 1000 $3.7 10000 $3.7	Buy Now
	DSPIC33CK128MP205T-I-M4	Digi-Reel	3,300		1	1 $3.7 10 $3.7 100 $3.7 1000 $3.7 10000 $3.7	Buy Now
	DSPIC33CK128MP205T-I-M4	Reel	3,300		3,300	1 - 10 - 100 - 1000 - 10000 $3.08001	Buy Now
Microchip Technology Inc DSPIC33CK128MP505T-I-M4 IC MCU 16BIT 128KB FLASH 48UQFN
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DigiKey	DSPIC33CK128MP505T-I-M4	Cut Tape	3,205		1	1 $4.01 10 $4.01 100 $4.01 1000 $4.01 10000 $4.01	Buy Now
	DSPIC33CK128MP505T-I-M4	Digi-Reel	3,205		1	1 $4.01 10 $4.01 100 $4.01 1000 $4.01 10000 $4.01	Buy Now
Microchip Technology Inc DSPIC33CK64MC105T-I-M4 IC MCU 16BIT 64KB FLASH 48UQFN
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DigiKey	DSPIC33CK64MC105T-I-M4	Cut Tape	2,860		1	1 $2.03 10 $2.03 100 $2.03 1000 $2.03 10000 $2.03	Buy Now
	DSPIC33CK64MC105T-I-M4	Digi-Reel	2,860		1	1 $2.03 10 $2.03 100 $2.03 1000 $2.03 10000 $2.03	Buy Now

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TIM4 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
TIM40R	Vishay Telefunken	Pulse Transformer, 400 mA Peak Current, 0.0085 mH Prim. Inductance	Original	PDF
TIM4450-12UL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM4450-16	Toshiba	TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power	Original	PDF
TIM4450-16	Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM4450-16L	Toshiba	Low Distortion Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM4450-16SL	Toshiba	TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power	Original	PDF
TIM4450-16UL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM4450-16UL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM4450-25UL	Toshiba		Original	PDF
TIM4450-30L	Toshiba	Low Distortion Internally Matched Power GaAs FETs (C-Band)	Original	PDF
TIM4450-35SL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM4450-4	Toshiba	TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power	Original	PDF
TIM4450-4	Toshiba	Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM4450-45SL	Toshiba	C-Band Power GaAs IMFETs; Frequency Band (GHz): 4.4-5.0; P1dB (dBm): 46.5; G1dB (dB): 9.5; Ids (A) Typ.: 9.6; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.8; Package Type: 2-16G1B	Original	PDF

TIM4450-45SL	Toshiba	Microwave Power GaAs FET	Scan	PDF
TIM4450-45SL	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
TIM4450-4L	Toshiba	Low Distortion Internally Matched Power GaAs FET (C-Band)	Original	PDF
TIM4450-4SL	Toshiba	TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power	Original	PDF
TIM4450-4UL	Toshiba	MICROWAVE POWER GaAs FET	Original	PDF
TIM4450-60SL	Toshiba	C-Band Power GaAs IMFETs; Frequency Band (GHz): 4.4-5.0; P1dB (dBm): 48; G1dB (dB): 9.5; Ids (A) Typ.: 13.2; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.6; Package Type: 2-16G1B	Original	PDF

TIM4 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz	Original	TIM4450-8SL TIM4450-8UL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz	Original	TIM4450-8SL TIM4450-8UL	PDF
TIM4450-4 Abstract: TPM4450-4 Text: TOSHIBA TIM4450-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4450-4 2-11D1B) MW50490196 TPM4450-4 TIM4450-4	PDF
TIM4450-16UL Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES nHIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C	Original	TIM4450-16UL TIM4450-16UL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS	Original	TIM4450-4UL	PDF
TIM4450-60SL Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz	Original	TIM4450-60SL TIM4450-60SL	PDF
Untitled Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-16SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 4.4GHz to 5.0GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.0dB at 4.4GHz to 5.0GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C	Original	TIM4450-16SL 42uipment TIM4450-16SL 2-16G1B)	PDF
TIM4450-8UL Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C	Original	TIM4450-8UL TIM4450-8UL	PDF
TIM4450-8ul Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS	Original	TIM4450-8UL TIM4450-8ul	PDF
TIM4951-8 Abstract: No abstract text available Text: TOSHIBA TIM4951-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4951-8 2-11D1B) MW50570196 TIM4951-8	PDF
TIM4450-16 Abstract: TPM4450-16 Text: TOSHIBA TIM4450-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4450-16 2-16G1B) MW50530196 TPM4450-16 TIM4450-16	PDF
TIM4450-8 Abstract: TPM4450-8 Text: TOSHIBA TIM4450-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4450-8 2-11D1B) MW50510196 TPM4450-8 TIM4450-8	PDF
TIM4450-8L Abstract: No abstract text available Text: TOSHIBA TIM4450-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain	Original	TIM4450-8L 2-11D1B) MW50520196 TIM4450-8L	PDF
TIM4450-8ul Abstract: No abstract text available Text: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C	Original	TIM4450-8UL Disto29 TIM4450-8ul	PDF

TIM4951-16 Abstract: No abstract text available Text: TOSHIBA TIM4951-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 9.0 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4951-16 2-16G1B) MW50580196 TIM4951-16	PDF
TIM4951-4 Abstract: No abstract text available Text: TOSHIBA TIM4951-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM4951-4 2-11D1B) MW50560196 TIM4951-4	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM4450-16 UnW50530196 MW50530196 TPM4450-16	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz	OCR Scan	TIM4450-30L IM4450-30L MW50550196 002237b	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power • PidB = • High gain dBm at 4.9 GHz to 5.1 GHz	OCR Scan	TIM4951-30L T017ESQ TIM4951-SOLÂ M4951-30L MW5059Ã 00B231b	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz	OCR Scan	TIM4450-8L MW50520196 4450-8L	PDF
TIM4951-16 Abstract: No abstract text available Text: -TIM4951-16 FEATURES: • HIGH POWER PldB = 42.5 dBm at 4.9 GHz to 5.1 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GldB = 9 0 dB at 4.9 GHz to 5.1 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C	OCR Scan	-TIM4951-16 TIM4951-16 22clflS TIM4951-16	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G 1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM4951-8 MW50570196 TIM4951-8	PDF
ip 4056 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	TIM4450-4 MW50490196 TPM4450-4 ip 4056	PDF
IC ADD 3501 Abstract: No abstract text available Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM4450-16 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 42.5 dBm at 4.4 GHz to 5.0 GHz BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-0 dB at 4.4 GHz to 5.0 GHz HERMETICALLY SEALED PACKAGE	OCR Scan	TIM4450-16 ------TIM4450-16--------------------POWER TIM4450-16 IC ADD 3501	PDF

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Microchip Technology Inc PIC24FJ64GP205T-I-M4

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Microchip Technology Inc DSPIC33CK128MP205T-I-M4

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Microchip Technology Inc DSPIC33CK64MC105T-I-M4

TIM4 Datasheets (39)

TIM4 Datasheets Context Search

Untitled

Untitled

TIM4450-4

TIM4450-16UL

Untitled

TIM4450-60SL

Untitled

TIM4450-8UL

TIM4450-8ul

TIM4951-8

TIM4450-16

TIM4450-8

TIM4450-8L

TIM4450-8ul

TIM4951-16

TIM4951-4

Untitled

Untitled

Untitled

Untitled

TIM4951-16

Untitled

ip 4056

IC ADD 3501