Untitled
Abstract: No abstract text available
Text: INDUSTRIAL POWER SUPPLIES TIS-SERIES INDUSTRIELLE STROMVERSORGUNG TIS-SERIE ALIMENTATIONS INDUSTRIELLES SERIE TIS ♦ TIS 75-112 ♦ TIS 75-124 ♦ TIS 75-148 ♦ TIS 150-124 ♦ TIS 150-148 ♦ TIS 300-124 ♦ TIS 300-148 ♦ TIS 300-172 ♦ TIS 500-124 ♦
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CH-8002
115/230VAC)
72VDC)
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ifr 6000 maintenance manual
Abstract: RTCA-DO-260A DO-260A ATC-600A DO-260 TCAS-201 ATC-601 IFR 6000 7005-5841-000 RBS 6000
Text: XPDR/DME TCAS/ADS-B/TIS Test Set IFR 6000 Operation Manual Issue 7 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign third party without the specific prior
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cypress flash 370
Abstract: architecture of cypress FLASH370 cpld cypress FLASH370 CY7C375 FLASH370 cypress flash 370 device CERAMIC QUAD FLATPACK CQFP 96 cypress flash 370 CPLD cypress FLASH370 programming 3803024
Text: 75 CY7C375 UltraLogic 128-Macrocell Flash CPLD Features Functional Description • 128 macrocells in eight logic blocks • 128 I/O pins • 6 dedicated inputs including 4 clock pins • Bus Hold capabilities on all I/Os and dedicated inputs • No hidden delays
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CY7C375
128-Macrocell
CY7C375
FLASH370TM
FLASH370
22V10
cypress flash 370
architecture of cypress FLASH370 cpld
cypress FLASH370
cypress flash 370 device
CERAMIC QUAD FLATPACK CQFP 96
cypress flash 370 CPLD
cypress FLASH370 programming
3803024
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MO-161
Abstract: PC200 PC2100 PC266BR-25330-B1 PC266BR-25330-A1
Text: HYS 72Dxxx0GR Registered DDR-I SDRAM-Modules 2.5 V 184-pin Registered DDR-I SDRAM Modules 256MB, 512MB & 1 GByte Modules Preliminary Datasheet Rev. 0.9 • 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for PC and Server main memory applications
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72Dxxx0GR
184-pin
256MB,
512MB
MO-161
512MByte
72Dxx0x0GR
PC200
PC2100
PC266BR-25330-B1
PC266BR-25330-A1
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ds1295
Abstract: tdv and tdqsq DS1295-11
Text: 128M x 64 Bit PC-1600/2100 Registered DDR SDRAM DIMM PC-1600/2100 DDR SYNCHRONOUS DRAM DIMM 64A0TxDVA8G20TXR 184 Pin 128Mx64 DDR SDRAM DIMM Registered, 8k Refresh, 2.5V with SPD Pin Assignment Pin# General Description The module is a 128Mx64 bit, 20 chip, 184 Pin
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PC-1600/2100
PC-1600/2100
64A0TxDVA8G20TXR
128Mx64
DQS17
10the
PC1600/2100
DS1295-11
ds1295
tdv and tdqsq
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H5PS5162
Abstract: H5PS5162FFR H5PS5162FFR-xxC H5PS5162FFR 85 h5ps5162ff
Text: H5PS5162FFR Series 512Mb DDR2 SDRAM H5PS5162FFR-xxC Series H5PS5162FFR-xxL Series H5PS5162FFR-xxI Series This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5PS5162FFR
512Mb
H5PS5162FFR-xxC
H5PS5162FFR-xxL
H5PS5162FFR-xxI
6-10per)
H5PS5162
H5PS5162FFR 85
h5ps5162ff
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K4T51163QI
Abstract: K4T51163QI-HC 60045 K4T51083QI
Text: Rev. 1.1, Jul. 2011 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T51043QI
K4T51083QI
K4T51163QI
512Mb
84FBGA
6-10per)
6-10per
K4T51163QI
K4T51163QI-HC
60045
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16MX8X4 ddr
Abstract: No abstract text available
Text: 128M x 64 Bit PC-1600/2100 DDR SDRAM DIMM PC-1600/2100 DDR SYNCHRONOUS DRAM DIMM 64A0TxDXA8G17TWK 184 Pin 128Mx64 DDR SDRAM DIMM Unbuffered, 8k Refresh, 2.5V with SPD Pin Assignment Pin# General Description 1 2 The module is a 128Mx64 bit, 17 chip, 184 Pin
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PC-1600/2100
PC-1600/2100
64A0TxDXA8G17TWK
128Mx64
16Mx8x4
256x8
PC1600/2100
DS1281-
16MX8X4 ddr
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K4T51083QI
Abstract: K4T51083QI-HC K4T51043QI K4T51163QI-HC k4t51163qi
Text: Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4T51043QI
K4T51083QI
K4T51163QI
512Mb
84FBGA
6-10per)
6-10per
K4T51083QI-HC
K4T51163QI-HC
k4t51163qi
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16MX8X4 ddr
Abstract: 16MX8X4 ddr sdram
Text: 128M x 72 Bit PC-1600/2100 Registered DDR SDRAM DIMM PC-1600/2100 DDR SYNCHRONOUS DRAM DIMM 72A0TxDVA8G22TXJ 184 Pin 128Mx72 DDR SDRAM DIMM Registered, 8k Refresh, 2.5V with SPD Pin Assignment Pin# General Description 1 2 The module is a 128Mx72 bit, 22 chip, 184 Pin
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PC-1600/2100
PC-1600/2100
72A0TxDVA8G22TXJ
128Mx72
DQS17
16Mx8x4
256x8
PC1600/2100
16MX8X4 ddr
16MX8X4 ddr sdram
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84FBGA
Abstract: No abstract text available
Text: DDR2 SDRAM K4T51163QE 512Mb E-die DDR2 SDRAM Specification Industrial Temp. 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4T51163QE
512Mb
84FBGA
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Untitled
Abstract: No abstract text available
Text: DDR2 SDRAM 1G A-die DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.0 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4T1G084QA-ZCE6
Abstract: K4T1G164QA-ZCE6 K4T1G084QA-ZCCC DDR2 Mechanical Dimensions K4T1G044QA-ZCCC K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE K4T1G164QA-ZCD5 sdram ddr2
Text: 1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4T5108
Abstract: No abstract text available
Text: DDR2 SDRAM 512Mb C-die DDR2 SDRAM 512Mb C-die DDR2 SDRAM Specification Version 1.4 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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512Mb
K4T5108
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Untitled
Abstract: No abstract text available
Text: PD128M6408 XXX D2J, PD256M6416(XXX)D2J SDRAM DDR2 MODULE 128M, 256MX64 UDIMM Features: • · · · · · · · · · · · · ROHS Complaint 240 pin unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC2-4200, PC2-5300 Utilizes DDR2-533 and DDR2-667 SDRAM FBGA
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PD128M6408
PD256M6416
256MX64
PC2-4200,
PC2-5300
DDR2-533
DDR2-667
128MX64)
256MBX64)
18-compatible)
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K4T51163QE
Abstract: No abstract text available
Text: K4T51043QE K4T51083QE K4T51163QE DDR2 SDRAM 512Mb E-die DDR2 SDRAM Specification Version 1.0 May 2006 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4T51043QE
K4T51083QE
K4T51163QE
512Mb
60FBGA
84FBGA
K4T51163QE
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL393T5263A-F7M REV: 1.0 General Information 4GB 512Mx72 DDR2 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL393T5263A is a 512Mx72 DDR2 SDRAM high density DIMM. This dual rank memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit registered buffer
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VL393T5263A-F7M
512Mx72
240-PIN
VL393T5263A
256Mx8
25-bit
240-pin
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL393T2863E-E7M/E6M/D5M REV: 1.1 General Information 1GB 128Mx72 DDR2 SDRAM VLP ECC REGISTERED DIMM 240-PIN Description The VL393T2863E is a 128Mx72 DDR2 SDRAM high density DIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 25-bit registered buffer in BGA package, a
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VL393T2863E-E7M/E6M/D5M
128Mx72
240-PIN
VL393T2863E
128Mx8
25-bit
240-pin
240-pin,
80TYP
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Untitled
Abstract: No abstract text available
Text: K4T51043QE K4T51083QE K4T51163QE DDR2 SDRAM 512Mb E-die DDR2 SDRAM Specification Version 1.2 September 2006 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4T51043QE
K4T51083QE
K4T51163QE
512Mb
60FBGA
84FBGA
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO: VL491T2863T-E7/E6/D5/CC REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ECC UNBUFFERED SO-CDIMM 200-PIN WITH THERMAL SENSOR Description: The VL491T2863T is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of
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VL491T2863T-E7/E6/D5/CC
128Mx72
200-PIN
VL491T2863T
128Mx8
30052Tomas,
R2-800)
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Untitled
Abstract: No abstract text available
Text: K4T1G044QA K4T1G084QA K4T1G164QA 1Gb DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Revision 1.3 October 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4T1G044QA
K4T1G084QA
K4T1G164QA
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Untitled
Abstract: No abstract text available
Text: 256Mb F-die DDR2 SDRAM DDR2 SDRAM 256Mb F-die DDR2 SDRAM Specification Version 1.3 January 2005 Page 1 of 27 Rev. 1.3 Jan. 2005 256Mb F-die DDR2 SDRAM DDR2 SDRAM Contents 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing
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256Mb
64Mx4
32Mx8
DDR2-667
K4T56083QF-GCE6
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PDF
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ER5000
Abstract: No abstract text available
Text: \ "¿poh / ICMEMI-CONJ MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS •Endurance with ripple current: 105°C 2000 to 5000 hours •Solvent-proof 6.3 to 100Vdc , see page 16 lower Z longer life ♦ s p e c if ic a t io n s Characteristics Item s Category Temperature Range
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100Vdc)
450Vtfc
120Hz)
450Vdc
100kHz)
-----10X16
10X20
10X16
16X31
ER5000
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C1573
Abstract: sim 300
Text: Miuiouay, úo^ioiiiuvi tn, 199& Revision: Tuesday, December 22,1992 •fi»«* n i W «! S7E D 5 5 5 ^ 2 C YP RE S S SEMI CONDUCTOR ODDTOMl ICYP 3bl CY7C375 PRELIMINARY CYPRESS SEMICONDUCTOR 128-Macrocell FLASH PLD Features Functional Description • 128 macroceils in eight logic blocks
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OCR Scan
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CY7C375
128-Macrocell
FLASH370
CY7C375
CY7C375.
C1573
sim 300
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