VEB mikroelektronik
Abstract: mikroelektronik DDR Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf VEB Keramische Werke keramische Werke Hermsdorf hermsdorf keramische Werke Hermsdorf 3677 Deutschen Demokratischen Republik Kombinat VEB Keramische Werke DDR Schaltkreise
Text: Widerstandsnetzwerke ProduktUbersicht Resistor Networks Products catalog Die vorgestellte Typenauswahl stellt einen Querschnitt unseres umfangreichen Sorti ments dar. Die verbindlichen Angaben zu den aufgeführten und weiteren Typen kön nen unseren „Technischen Lieferbedingun
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WV/6/1-10
VEB mikroelektronik
mikroelektronik DDR
Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf
VEB Keramische Werke
keramische Werke Hermsdorf
hermsdorf
keramische Werke Hermsdorf 3677
Deutschen Demokratischen Republik
Kombinat VEB Keramische Werke
DDR Schaltkreise
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SMD transistor M05
Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE
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10/2M
SMD transistor M05
smd TRANSISTOR code m05
wy smd transistor
UPD5740
NE66200
TRANSISTOR m05 smd
UPD5740T6N
UPG2159T6R
SMD transistor M05 driver
50 VOLTS 5 amp smd sot-89 TRANSISTOR
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SMD M05 sot23
Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly
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2013/4M
SMD M05 sot23
NE5531
nE352
A3 smd sot-343
transistor smd m05
SMD transistor M05
transistor smd code 404
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
15lsl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
15lsl
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Untitled
Abstract: No abstract text available
Text: An IXYS Company Provisional Data Data Sheet Issue:- 1 WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1) VRRM Extra Fast Recovery Diode
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F1500NC250
F1500NC250
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tk 19 209
Abstract: atmel 0635 IC MC 14017 B
Text: jflmëE W IR E L E S S * i/C Packaging and Packing Information Atmel Wireless & Microcontrollers Standard Bar-Code Labels The Atmel Wireless & Microcontrollers standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Atmel Wireless & Microcontrollers’ specific data.
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U6043
2800PCS19
V20010129528448OB-2L1IC
284480B-2L
tk 19 209
atmel 0635
IC MC 14017 B
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F1500NC
Abstract: calculation of diode snubber westcode fast recovery diode F1500NC250 50V 2000A diode
Text: An IXYS Company Provisional Data Data Sheet Issue:- 1 WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS Extra Fast Recovery Diode Type F1500NC250 MAXIMUM LIMITS UNITS Repetitive peak reverse voltage, note 1 2500 V VRSM Non-repetitive peak reverse voltage, (note 1)
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F1500NC250
F1500NC250
F1500NC
calculation of diode snubber
westcode fast recovery diode
50V 2000A diode
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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MCL 1 034
Abstract: TC55YD1873YB-333
Text: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 2 6 2 ,1 4 4 - W O R D BY 72-B IT S Y N C H R O N O U S STATIC R A M SILICON GATE CMOS S ig m a R A M , 21 x1 D p DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
MCL 1 034
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PDF
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CQ226
Abstract: tk 69 K7Z167285A
Text: K7Z167285A Preliminary 256Kx72 Double Late Write SigmaRAMTM Document Title 256Kx72 Double Late Write SigmaRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 1. November 2, 2000 March 30, 2001 May 16, 2001 July 18, 2001 Preliminary
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K7Z167285A
256Kx72
K7N167285A
11x19
CQ226
tk 69
K7Z167285A
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CP12
Abstract: CP14 CP16 CP18 62944
Text: Order this data sheet by 62941D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military 6294 16K x 4 “BitSynchronous Static RAM with Output Registers and Output Enable The 6294 is a 65,536 bit synchronous random access memory organized as 16,384 words of 4 bits, fabricated using Motorola’s second-generation high-petiormance siliconThe device integrates input registers, high speed
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62941D
MK145BP,
CP12
CP14
CP16
CP18
62944
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V50221
Abstract: CI 7912 Ru 94 VO
Text: .560 -14.a? EUEOTOMCS. Droits de reproduction BERG ELECTRONICS NC. .500 Propriete d« 8ERC t DF TERMINAL .«» .107 £.72 REF r o m NOTES> • ‘• ■ « t T LATCH SWINGS CLOSED AFTER TERMINATION MAINTAINING A MAX. OVER ALL HEIGHT OF .100/2.54. 2. MOLDING MAT'L,POLYPROPYLENE,FLAME RETARDANT PER UL 9 4 V - 0
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UNS-C17200.
V50221
CI 7912
Ru 94 VO
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM67M618B/D SEMICONDUCTOR TECHNICAL DATA MCM67M618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67M618B is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache
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MCM67M618B/D
MCM67M618B
MC68040
1ATX35402-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
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DG12
Abstract: No abstract text available
Text: A ¡a. «te. *-3 DEGSON ELECTRONICS CO., LTD. DEGSON UM C€ PC, UL94V-2 Wils], 1,2M UxIÎl ÍR, M4 M #: È1ÉÌ: * 300V/30A -40°C~+80°C AC2000V /1 Min 1000M Q /DC500V 18-10AWG 1.2N.m 10.6Lb.in iÆÆffeJÏ/ftSÎL: m m tK : DG12 11x P-1 +23 IT DG12 í Í C
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UL94V-2
00V/30A
AC2000V
1000M
DC500V
18-10AWG
DG12
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MTL ICC 311
Abstract: HDSP-5621 HDSP-5623 LN526RGA SL-2199 SL-2225 hp 5082-7756
Text: - 84- 1 & tíü ! 2È J l 5IJ •it ¥ É’J & ti « >CTí=7? H D SP-5621 H D SP-5623 L N 526RG A - HP & T ft 14 Jft [Ta= 2 o O «ist;!: If Vjf i V i im A : 3 30 0.56 G aP S i! m m - fcJ£ W.i$ R liŒ A/. A X Ir Vjr Iy If Ir Ir nm '' !nm ' ;m A ; ¡m cd ' ! rn A 1 i. V j (m A : '.„A '
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HDSP-5621
HDSP-5623
LN526RGA
P2X14-2BÂ
MD0657M-R)
MD2057C-R)
MD2057C-RG)
SL-Q225
MTL ICC 311
SL-2199
SL-2225
hp 5082-7756
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DG65H-B
Abstract: s110x
Text: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON fflfh LJ U [U I PA66, UL94V-0 im-F: füîpi]« 1.0Ü tixtH È1ÉÌ: «9. M4 f t H iÆÆffeJÏ/ftSÎL: 300V/20A -40°C~+105°C AC2000V / 1 Min 500MQ/DC500V 22-12AWG U m m tK : DG65H-B 1.2N.m IT í ÍC
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DG65H-B
UL94V-0
00V/20A
AC2000V
Q/DC500V
22-12AWG
DG65H-B
s110x
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Untitled
Abstract: No abstract text available
Text: A ¡a. «te. * -3 Sa Mi DEGSON ELECTRONICS CO., LTD. DEGSON ^ UM PA66+23%GF, UL94V-0 Wils] i 0.8jlpî tlxtH «9. M4 fSH fflfh W » C € im-F: È1ÉÌ: I 300V/20A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1,2N.m 10.6Lb.in m m tK : DG48R-A IT Poles
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DG48R-A
UL94V-0
00V/20A
AC2000V
500MQ/DC500V
DG48R-A
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Untitled
Abstract: No abstract text available
Text: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON Sa Mi fflfh tW u s C € PA66, UL94V-0 im -F : füîpi]« 1.0Ü íixíH È1ÉÌ: «9. M4 f t H iÆÆffeJÏ/ftSÎL: 300V/20A -40°C~+105°C A C 2 0 0 0 V /1 Min 500M Q /DC500V 22-12AW G m m tK : DG65S-A
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DG65S-A
UL94V-0
00V/20A
AC2000V
500MQ/DC500V
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PDF
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Untitled
Abstract: No abstract text available
Text: A ¡a. Sa Mi ^ «te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON UM tWus C € PA66, UL94V-0 füîpi] « 1.0Ü tixtH «9. M4 f t H fflfh im-F: È1ÉÌ: * ' * p p 300V/20A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1.2N.m 10.6Lb.in m m tK: DG65R-B
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DG65R-B
UL94V-0
00V/20A
AC2000V
500MQ/DC500V
DG65R-B
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PDF
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Untitled
Abstract: No abstract text available
Text: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON Sa Mi ^ UM PA66, UL94V-0 Wils] i 0.8jipi tlxtH «9. M4 fS H f f lf h tW us C € im-F: È1ÉÌ: 300V/25A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1.2N.m 10.6Lb.in m m tK : DG45S-A "S"=9.5x P-1
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DG45S-A
UL94V-0
00V/25A
AC2000V
Q/DC500V
22-12AWG
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DG13
Abstract: No abstract text available
Text: A ¡a . « te . * -3 DEGSON ELECTRONICS CO., LTD. DEGSON C€ UM PC, UL94V-2 Wils], 1,2 M UxIÎl ÍR, M4 M#: È1ÉÌ: I 300V/30A -40°C~+80°C AC2000V /1 Min 1000M Q / DC500V 18-10AWG 1.2N.m 10.6Lb.in iÆÆffeJÏ/fiLSÎL: m m tK : DG13 11x P-1 +23 IT I I í
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UL94V-2
00V/30A
AC2000V
1000M
DC500V
18-10AWG
DG13
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Untitled
Abstract: No abstract text available
Text: A # at * ¿ * 3 - * ^ DEGSON ELECTRONICS CO., LTD. DEGSON MM PA66, UL94V-0 üîîls] « 0.8 5 ÍIxílS «9. M4 & H fflfh im-F: í f ÉÍ: •m * ' * ' f 7* 300V/25A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1.2N.m 10.6Lb.in m m tK : DG45R-B "S"=9.5x P-1)
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DG45R-B
UL94V-0
00V/25A
AC2000V
500MQ/DC500V
DG45R-B
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