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    TK30A06N1 Search Results

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    TK30A06N1 Price and Stock

    Toshiba America Electronic Components TK30A06N1,S4X

    MOSFET N-CH 60V 30A TO220SIS
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    DigiKey TK30A06N1,S4X Tube 633 1
    • 1 $1.27
    • 10 $1.27
    • 100 $1.27
    • 1000 $0.37454
    • 10000 $0.2925
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    Mouser Electronics TK30A06N1,S4X
    • 1 $0.9
    • 10 $0.552
    • 100 $0.486
    • 1000 $0.35
    • 10000 $0.292
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    Toshiba America Electronic Components TK30A06N1

    Power MOSFET, N Channel, 60 V, 30 A, 15 Milliohms, TO-220SIS, 3 Pins, Through Hole - Rail/Tube (Alt: TK30A06N1,S4X)
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    Avnet Americas TK30A06N1 Tube 11,000 16 Weeks 1
    • 1 $0.2753
    • 10 $0.27144
    • 100 $0.25986
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    Toshiba America Electronic Components TK30A06N1,S4X(S

    Mosfet, N-Ch, 60V, 43A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK30A06N1,S4X(S
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    Newark TK30A06N1,S4X(S Bulk 1,738 1
    • 1 $0.914
    • 10 $0.74
    • 100 $0.518
    • 1000 $0.403
    • 10000 $0.329
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    Quest Components TK30A06N1,S4X(S 1,280
    • 1 $1.185
    • 10 $1.185
    • 100 $0.5925
    • 1000 $0.474
    • 10000 $0.474
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    Chip One Stop TK30A06N1,S4X(S Bulk 171
    • 1 -
    • 10 $0.814
    • 100 $0.364
    • 1000 $0.364
    • 10000 $0.364
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    TK30A06N1,S4X(S Bulk 10
    • 1 -
    • 10 $0.814
    • 100 $0.814
    • 1000 $0.814
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    EBV Elektronik TK30A06N1,S4X(S 19 Weeks 50
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    Toshiba America Electronic Components TK30A06N1S4XS

    MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA TK30A06N1S4XS 600
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    TK30A06N1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK30A06N1 Toshiba TK30A06N1 - Nch 30V Original PDF
    TK30A06N1 Toshiba Transistors - Mosfets Original PDF
    TK30A06N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK30A06N1,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-220 Original PDF

    TK30A06N1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK30A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 12.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original
    TK30A06N1 O-220SIS PDF

    TK30A06N1

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    TK30A06N1 O-220SIS TK30A06N1 PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


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    SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


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    BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


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    SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W PDF