51c7
Abstract: 021F E5B0 SD500 01e3 385 20 mov 51B5 FB E528 UV 471 78L05
Text: INTEGRATED CIRCUITS AN426 Controlling air core meters with the 87C751 and SA5775 1992 January Revised: Nov 1995 Philips Semiconductors Philips Semiconductors Application note Controlling air core meters with the 87C751 and SA5775 INTRODUCTION SA5775 Serial Gauge Driver
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Original
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AN426
87C751
SA5775
SA5775
51c7
021F
E5B0
SD500
01e3
385 20 mov
51B5
FB E528
UV 471
78L05
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PDF
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CS 78L05
Abstract: F52F F529 AN426 DMS-10 CS78L05 78L05 80C51 87C751 NE555
Text: INTEGRATED CIRCUITS AN426 Controlling air core meters with the 87C751 and SA5775 1992 January Revised: Nov 1995 Philips Semiconductors Philips Semiconductors Application note Controlling air core meters with the 87C751 and SA5775 INTRODUCTION SA5775 Serial Gauge Driver
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Original
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AN426
87C751
SA5775
SA5775
CS 78L05
F52F
F529
AN426
DMS-10
CS78L05
78L05
80C51
NE555
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PDF
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51c7
Abstract: AN426 d9fc 78L05 80C51 83C751 87C751 NE555 SA5775 ne555 timer
Text: Philips Semiconductors Application note Controlling air core meters with the 87C751 and SA5775 INTRODUCTION SA5775 Serial Gauge Driver Often, certain classes of microcontroller applications surface where large amounts of on-chip resources such as a large program
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Original
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87C751
SA5775
SA5775
00E0H
00C5H
023DH
023FH
0267H
0073H
51c7
AN426
d9fc
78L05
80C51
83C751
NE555
ne555 timer
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PDF
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TSP50C42
Abstract: tsp50c4x TSP50C TSP50C41
Text: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this
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OCR Scan
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TSP50C4X
BRN09
BRN10
TSP50C42
TSP50C
TSP50C41
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PDF
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Triac t460
Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Text: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •
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OCR Scan
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O-220AB'
oTO-220AB
Triac t460
JE 33
H112
T210
T460
X108
triac BT 0266
8P2SM
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PDF
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A 3020 opto
Abstract: S8201A S3020 TA 3020 ES TA 3020
Text: TOSHIBA -CDISCRETE/OPTO]- 3T 9097250 TOSHIBA DE t O T T E S O DDODSSfl M (DISCRETE/OPTO 1SyJ5H X -Y ¿ _ 39C 0 0 5 5 8 o O 7" - '/ ) 7 - / / X-Band O s c i l l a t o r and M o d u la to r A p p lic a tio n s ¡Ü ffi Po tl-C-to = 100 mW ( M in .) S 3 0 2 0
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OCR Scan
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S3020
S3020A
S8201A
S3020,
S3020A
A 3020 opto
S8201A
TA 3020 ES
TA 3020
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PDF
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M6800 programming manual
Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
Text: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL
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OCR Scan
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1B800
M6800
M6800 programming manual
PIR based human motion DETECTOR CIRCUIT DIAGRAM
MC6820 PIA
mcm6830
BURROUGHS self scan
car ecu microprocessors
DVD CD 5888 CB
MC6810
IP 8082 BL
4013 FLIP FLOP APPLICATION DIAGRAMS
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PDF
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UF460
Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s
Text: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE
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OCR Scan
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CycleS50
SC-43B
UF460
8 pin ic 3773
PA33
T108
X108
Tc-6173
s11s
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PDF
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UPD74HC08
Abstract: lt 420 sf 50 gg FE8B
Text: SEC M o s s i im s s M O S In te g ra te d C ircu it iiT / \ f 7 PD74HC08 QUAD 2 -IN P U T AND G A TE mo c s jii iit m U ¿ 0 - 5 1 t L T H fiP S? tl/tQ U A D 2 -IN P U T AND r - K ^ P D 7 4 H C 0 8 ii, M C M O S n y . y ; 7 r i y •9L S T T L ' j a ^ r -
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OCR Scan
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uPD74HC08
/iuPD74HC08C
/iuPD74HC08G
uPD74HC08G-T1
lt 420 sf 50 gg
FE8B
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PDF
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L46R
Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Text: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l
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OCR Scan
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uPA607T
PA606T
l--62
B484S±
L46R
96 mfu DIODE
HR 8665
PA607T
4N51
5M1E
328l
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PDF
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TL 0621 P
Abstract: t4 0560 c TL 0621 N T4 0560 M39006/22-02S1
Text: I CLR79 MIL-C-39006/22 Wet Tantalum Capacitors M allorY All Tantalum Case Hermetically Sealed GENERAL SPECIFICATIONS Up to 3 Volts Reverse Capability Operating Temperature: -55°C to +125°C Higher Ripple Current Capability Voltage Range: 6 to 125 VDC Capacitance Range:
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OCR Scan
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CLR79
MIL-C-39006/22)
CLR79
M39006/22-0251
CLR790251.
CLR790251H)
1284/Indianapolis
46206-1284/Phone:
273-0090/Fax:
TL 0621 P
t4 0560 c
TL 0621 N
T4 0560
M39006/22-02S1
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PDF
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Untitled
Abstract: No abstract text available
Text: I CLR69 MIL-C-39006/21 Wet Tantalum Capacitors M allorY GENERAL SPECIFICATIONS ntalum C a p a c ito rs Silver Case Technology Hermetically Sealed Rugged Construction High Shock and VibrationCapabiiity High Capacitance per Case Size Low DCL and ESR Long Shelf Life
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OCR Scan
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CLR69
MIL-C-39006/21)
CLR69
M39006/21-0197
CLR690197
1284/Indianapolis
46206-1284/P
273-0090/Fax:
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PDF
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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OCR Scan
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PDF
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TC-6252
Abstract: TC6252 WJ M64
Text: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m
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OCR Scan
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Cycled50
82cMS25Ã
TC-6252
TC6252
WJ M64
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PDF
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2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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OCR Scan
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2SK659
2SK659Ã
2SK659
TC-6071
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PDF
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L0836
Abstract: TRANSISTOR C 6090 l5 transistor PNP transistor PNP L5 2SB1217
Text: SEC Aj Silicon P o w e r Tran sistor n ^ /v rz _ 2 S B 1 2 1 7 PNPX " S ^ > ? PNP Silicon Epitaxial T ran sisto r Audio Frequency A m plifier, M edium Speed Switching U n it : mm ° < , I) f i V c E ( s a t ) T " t ' o L I c(do = —3.0 A, Ic (Puise)=~5.0 A
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OCR Scan
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2SB1217
2SD1818
L0836
TRANSISTOR C 6090
l5 transistor PNP
transistor PNP L5
2SB1217
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PDF
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pw510
Abstract: H150 TC-6178
Text: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l
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OCR Scan
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PW510
H150
TC-6178
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PDF
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uc 4538
Abstract: UC 3245 J5LJ PA606T PA607T YA53
Text: MOS M O S Field E ffe ct T ra n sisto r «PA606T F E T 6 f c V 2 ^ :?- N f t ^ M O S MOS FE T £ 2 ¿¿PA606T ( i, k t^ m ft w m L fc s (3 M Ï : mm) »3, X T * m o S C - 5 9 s '° " / 'r ~ is tm tV - '( FET £ 2 — MOS l*I/$ o ^ P A 6 0 7 T ¿ 3 > 7 " I)
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OCR Scan
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uPA606T
PA606T
484lfit
uc 4538
UC 3245
J5LJ
PA606T
PA607T
YA53
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PDF
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J196
Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
Text: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o
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OCR Scan
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2SJ196
2SJ196
2SK1482
IEI-620)
J196
L0836
40t60
DF RV transistor
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PDF
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BA1A4P
Abstract: T108 02-WM RSL AH transistorBA1A4P
Text: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^
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OCR Scan
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CycleS50
BA1A4P
T108
02-WM
RSL AH
transistorBA1A4P
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PDF
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2SC3733
Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier
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OCR Scan
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2SA1460
2SC3733
12/PACKAGE
PWS10
CycleS50
2SC3733-T
La HL33
2SA1460
IMWS1
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PDF
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transistor Bf 444
Abstract: L4Z marking S6111 MARKING JM transistor EKs 5001FE ab 4455
Text: h SEC ^ ì ? / t C o m Ÿ 1 * X p o u n d T r a n s is t o r GA1 L4Z f â i i t F*9 l e N P N X f c : ? 4 - ^ 7 ^ Jf2 5 ^ 'J 3 > X ? 4>iÎÆ^'T-y51>^ !» # .{È i t : mm o / M T X tS fit è f*3j%l T v>i f , CRi =47 kQ ) o G N 1 L 4 Z ! : 3 > 7 , | l / > 7 1) - ü t t JS T - ë â 1 " „
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OCR Scan
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PDF
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TRANSISTOR XL08
Abstract: XL08 TI08 T46C lj11 T 3361 001
Text: X I • I ÎS NEC m C o m p o u n d T ra n s is to r GN 1L3Z U□ > Y=7>i>^ JS if c r t i P N P x f t 9mH i t * e : mm o '< 4 t (R i = 4 .7 kQ ) B O— W V R, k? — ô E o GA1L3Z t 3 >7° U ^ > ? U T'fêfflT'ë i 1“ c (T a = 25 °C) m 3- 9 ì "/ ^ s
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OCR Scan
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CycleS50
TRANSISTOR XL08
XL08
TI08
T46C
lj11
T 3361 001
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PDF
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HHB8
Abstract: No abstract text available
Text: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #
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OCR Scan
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PWiS10
HHB8
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PDF
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