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    TL 2N3904 TRANSISTOR Search Results

    TL 2N3904 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TL 2N3904 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PN3906 TRANSISTOR PNP

    Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
    Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92


    Original     		SPT/TO-92 SPTTO-92 llU--800 loo250-700 loo--300 lOO-60( 250-63t loo05 loo56 UMT3906 PN3906 TRANSISTOR PNP 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A PDF

    NSB5881

    Abstract: MICROPROCESSOR Z80 7segment NSB3881 NSN581 9 digit display NSA1298 NSB7881 MM74C917 MM74C912 NSB3881 equivalent NSN381
    Text: National Semiconductor Application Note 257 Larry Wakeman May 1981 I INTRODUCTION The MM74C911 MM74C912 and MM74C917 are CMOS display controllers that control multiplexing of 8-segment LED displays These devices each have an on-chip multiplex oscillator and associated logic to easily implement multi-digit displays with minimal additional hardware These


    Original     		MM74C911 MM74C912 MM74C917 MM74C912 NSB5881 MICROPROCESSOR Z80 7segment NSB3881 NSN581 9 digit display NSA1298 NSB7881 NSB3881 equivalent NSN381 PDF

    2n2369s

    Abstract: free transistor a4s quad comparator LM329 2N2369 transistor tl 2N3904 TRANSISTOR rosemount 118-mg rosemount 118 rosemount 118 mf sensor rosemount 118 2N4393, NATIONAL
    Text: National Semiconductor Application Note 262 May 1981 The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilities of FET op amps including low bias current and speed and some additional advantages The cost-per-amplifier is lower because


    Original     		PDF

    CURRENT-TO-FREQUENCY

    Abstract: IC LM331 2N3565 2N4250 photoresistors Photoresistor 2N3565 pin lm331 3N190 5622
    Text: National Semiconductor Application Note 240 Robert A Pease May 1980 Does an analog-to-digital converter cost you a lot if you need many bits of accuracy and dynamic range Absolute accuracy better than 0 1% is likely to be expensive But a capability for wide dynamic range can be quite inexpensive


    Original     		PDF

    CD4046

    Abstract: CD4046 application note CD4046 APPLICATION CIRCUIT PLL CD4046 application CD4046 applications PLL cd4046 Andrzej Przedpelski optimize 2N3565 CD4046 pll application note CD4046 application
    Text: National Semiconductor Application Note 210 Robert Pease April 1979 A phase-locked-loop PLL is a servo system or in other words a feedback loop that operates with frequencies and phases PLL’s are well known to be quite useful (powerful in fact) in communications systems where they can pluck


    Original     		PDF

    2N08L

    Abstract: MTP12N08L 7ROM AN569 2N3904 1N914 221A-04
    Text: Order this data sheet by MTP12N08UD MOTOROLA m SEMICONDUCTOR TECHNICAL DATA I Designerfs I MTPI 2N08L MTP12NIOL Data Sheet Power Field Effect Transistor ,+!. .{,l, .$:,:~,.,\~.G !~,;,I ,:.~,. ‘\.: ?,. ,*,.,.,. .$ ~t. . I N-Channel Enhancement-Mode


    Original     		MTP12N08UD 2N08L MTP12NIOL MK145BP, MTP12N08L 2N08L MTP12N08L 7ROM AN569 2N3904 1N914 221A-04 PDF

    class h power amplifier schematic

    Abstract: schematic diagram 800 watt power amplifier schematic diagram power amplifier free download GAIN CALCULATION FOR SINGLE SUPPLY OPERATION operational amplifier discrete schematic an power amplifier 108 mhz h 2n3904 isolated four voltages out power supply schematic power amplifier circuit diagram 2N3904
    Text: May 1995 LM4700 Audio Power Amplifier Series 30W Audio Power Amplifier with Mute and Standby Modes General Description Key Specifications The LM4700 is an audio power amplifier capable of delivering typically 30W of continuous average output power into an 8X load with less than 0 1% THD a N


    Original     		LM4700 LM4700 class h power amplifier schematic schematic diagram 800 watt power amplifier schematic diagram power amplifier free download GAIN CALCULATION FOR SINGLE SUPPLY OPERATION operational amplifier discrete schematic an power amplifier 108 mhz h 2n3904 isolated four voltages out power supply schematic power amplifier circuit diagram 2N3904 PDF

    MTP12N10E

    Abstract: 2N3904 AN569
    Text: MOTOROLA Order this document by MTP12N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high


    Original     		MTP12N10E/D MTP12N10E MTP12N10E/D* MTP12N10E 2N3904 AN569 PDF

    2N3904

    Abstract: AN569 MTP10N10E
    Text: MOTOROLA Order this document by MTP10N10E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation


    Original     		MTP10N10E/D MTP10N10E MTP10N10E/D* 2N3904 AN569 MTP10N10E PDF

    2N3904

    Abstract: AN569 MTP12N10E
    Text: MOTOROLA Order this document by MTP12N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP12N10E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy


    Original     		MTP12N10E/D MTP12N10E MTP12N10E/D* 2N3904 AN569 MTP12N10E PDF

    F11410

    Abstract: No abstract text available
    Text: Issued March 1991 F11410 Video opto-isolator HCPL4562 Stock number 590-373 Features The HCPL4562 opto-isolator provides wide bandwidth isolation for analogue signals making it ideal for video isolation. High linearity and low phase shift are achieved through an 820mm A1GaAs emitter, combined with a high speed detector.


    Original     		F11410 HCPL4562 HCPL4562 17MHz 820mm HCPL-4562 F11410 PDF

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    15w audio amplifier circuit diagram

    Abstract: LM1876 AMPLIFIER LM1876TF 2 x 20w amplifier mute operational amplifier discrete schematic TF15B isolated four voltages out power supply schematic 2N3904 C1996 LM1876
    Text: August 1996 LM1876 Audio Power Amplifier Series Dual 20W Audio Power Amplifier with Mute and Standby Modes General Description Key Specifications The LM1876 is a stereo audio amplifier capable of delivering typically 20W per channel of continuous average output


    Original     		LM1876 LM1876 15w audio amplifier circuit diagram LM1876 AMPLIFIER LM1876TF 2 x 20w amplifier mute operational amplifier discrete schematic TF15B isolated four voltages out power supply schematic 2N3904 C1996 PDF

    B22V

    Abstract: 2N3904 C1995 LM1876 LM1876TF TF15B 2 x 20w audio amplifier mute
    Text: April 1995 LM1876 Audio Power Amplifier Series Dual 20W Audio Power Amplifier with Mute and Standby Modes General Description Key Specifications The LM1876 is a stereo audio amplifier capable of delivering typically 20W per channel of continuous average output


    Original     		LM1876 LM1876 B22V 2N3904 C1995 LM1876TF TF15B 2 x 20w audio amplifier mute PDF

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN LITON E L E C T R O N I C MTE » • 0035^5 0 0 0 4 0 7 b 5ÖÖ ■ TLIT LEAD MOUNTED TRANSISTORS 'T-v-zi NPN T R A N SIST O R S TO-92 PLASTIC C A SE 625 m W @ TL = 25°C 2mm FRO M C A SE C H A R A C T ER IST IC S @ Ta 25°C Type Number 2N3903 2N3904


    OCR Scan     		2N3903 2N3904 2N4400 2N4401 PN2221 PN2221A PN2222 PN2222A BC327 BC327-16 PDF

    2N3904

    Abstract: 2N3903 2n3904D 2n3904 motorola 2N3904 equivalent MOTOROLA 2N 2N 3904 2n 3904 ic 3904
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3903 2N3904* NPN Silicon ‘Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Sym bol Value Unit Collector- Emitter Voltage Rating VCEO 40 Vdc Collector- Base Voltage VCBO 60


    OCR Scan     		2N3903 2N3904* 20ECTOR 2N3904 2N3904 2n3904D 2n3904 motorola 2N3904 equivalent MOTOROLA 2N 2N 3904 2n 3904 ic 3904 PDF

    2n4125 equivalent

    Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 NPN+2n3904 PDF

    tl 2N3904 TRANSISTOR

    Abstract: TC236
    Text: TC236 680- x 500-PIXEL CCD IMAGE SENSOR S O C S 0 4 3 A -J U N E 1 9 9 4 - REVISED N O VEM BE R 1994 • Very High-Resolution, 1/3-in Solid-State Image Sensor for NTSC Color Applications • Continuous Electronic Exposure Control From 1/60-1/50,000 s • 340,000 Pixels per Field


    OCR Scan     		TC236 500-PIXEL tl 2N3904 TRANSISTOR PDF

    GES2222A

    Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, GES2222A NPN switching transistor 2N4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: MON35WÔ2 SlllgC STANDARD MICROSYSTEMS CORPORATION Hardware Monitoring 1C - l2C Interface Only FEATURES • • M onitoring Items 3 Thermal Inputs From Remote Therm istors or 2N3904 NPN-type Transistors or Pentium II Deschutes thermal diode output 6 Voltage Inputs


    OCR Scan     		MON35WÃ 2N3904 PDF

    2N5219

    Abstract: 2N5227 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350 350


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N5219 2N5227 PDF

    2N5225

    Abstract: 2N5219 JEDEC 2N3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sa t E b v CEO Type @ 10mA-(V) Min. Max. @ lc (mA) V ce (V ) Max. @ lc(m A ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 100mA, 2N5225 2N5219 JEDEC 2N3904 PDF

    2N5223

    Abstract: CEB npn GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) Max. @ lc (m A ) f-r -Typical l e (m A ) (M H z) 50 50 50 50 50 •BaBB 50 50 50 150 150 .4 .2 .2


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225age 2N5223 CEB npn GES93 PDF

    2N5219

    Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225tter-Base 2N5219 PDF