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    TL240 Search Results

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    TL240 Price and Stock

    TE Connectivity TCTL2-4-0-1-2-IV-U

    COMPRESSION CONNECTORS
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    DigiKey TCTL2-4-0-1-2-IV-U Box 19 1
    • 1 $8.78
    • 10 $7.157
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    Lite-On Semiconductor Corporation LTL-2400Y

    LED LGT BAR 8.89X3.81MM YLW
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    DigiKey LTL-2400Y Tube 1,000
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    Mouser Electronics LTL-2400Y
    • 1 $1.01
    • 10 $0.672
    • 100 $0.52
    • 1000 $0.408
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    SEI Stackpole Electronics Inc RNV14JTL240K

    RES 240K OHM 5% 1/4W AXIAL
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    DigiKey RNV14JTL240K Reel 5,000
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    Avnet Americas RNV14JTL240K Reel 9 Weeks 5,000
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    Mouser Electronics RNV14JTL240K
    • 1 $0.26
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    NAC RNV14JTL240K 5,000
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    SEI Stackpole Electronics Inc RNV14FTL240K

    RES 240K OHM 1% 1/4W AXIAL
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    DigiKey RNV14FTL240K Reel 5,000
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    Avnet Americas RNV14FTL240K Reel 9 Weeks 5,000
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    Mouser Electronics RNV14FTL240K
    • 1 $0.24
    • 10 $0.198
    • 100 $0.078
    • 1000 $0.033
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    NAC RNV14FTL240K 5,000
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    Anytek Technology Corporation Ltd TL2405800000G

    TERM BLK 24POS TOP ENTRY 5MM PCB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TL2405800000G Bulk 2,010
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    Onlinecomponents.com TL2405800000G
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    Interstate Connecting Components TL2405800000G
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    Find more TL240 price and stock on Findchips.com

    TL240 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TL2405800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 24POS TOP ENTRY 5MM PCB Original PDF

    TL240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    Untitled

    Abstract: No abstract text available
    Text: 2 4 2 1 n1.00 `.10 [.039 `.004 in] 6.50 `.10 [.256 `.004 in] RELEASED FOR PRODUCTION 15030 14919 PCR NO B A REV 1.81 [.071 in] 4.80 [.189 in] 2.30 [.091 in] 1 4.50 [.177 in] 3 JB 5/13/05 BY DM 7/22/05 DATE BGL 12/28/10 6.50 `.50 [.256 `.020 in] THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY


    Original     		PDF 12VDC 100mILLI-Ohms 2002/95/ECONS 2002/95/EC TL240NF160 P010330) TL240 P001004)

    TL235

    Abstract: No abstract text available
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PDF PTVA030121EA PTVA030121EA H-36265-2 TL235

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PDF PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    Untitled

    Abstract: No abstract text available
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4

    ATC100B6R2CT500X

    Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208FV PTFB213208SV 320-watt PTFB213208FV H-34275G-6/2 ATC100B6R2CT500X TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300

    TL235

    Abstract: tl241 TL234 TL240 PTVA030121EA bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PDF PTVA030121EA PTVA030121EA H-36265-2 TL235 tl241 TL234 TL240 bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145