TME 87
Abstract: TME 87 0D
Text: ^EDI EDI8F3265C B*c1ronlc Dvtigm Inc." High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static R A M sinSO J packages on an epoxy
|
OCR Scan
|
EDI8F3265C
64Kx32
EDI8F3265C
64Kx32.
64Kx4
coEDI8F3265C25MZC
EDI8F3265C30MZC
EDI8F3265C35MZC
I8F3265C45MZC
TME 87
TME 87 0D
|
PDF
|
3XXXS
Abstract: jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 IDT70V9389L 017L
Text: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9389L Features: * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location
|
OCR Scan
|
IDT70V9389L
5/9/12ns
IDT70V9389L
500mW
PK128-1)
70V9389
1152K
18-Bit)
3XXXS
jsw marking
Typ41
marking code JSW
A15L
A15R
IDT70V9389
017L
|
PDF
|
TS8019
Abstract: PMC - NE 8 D TS-1529 PMC14 ts1030
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C e T e B b ie T p a H C $ o p M a T o p b i a h a M O H T a w a H a n a H e n b n e n a T H y ro m h m CeTeBue T paH c^opM aT op bi W M p o ro n n a T y n p M M e i-m ro T C fl b npo^eccM O H anbH O M
|
OCR Scan
|
06M0TKa
TS50/11
TS50/26
TS50/47
TS50/017
TS50/018
TS70/16
TS70/002
TS8019
PMC - NE 8 D
TS-1529
PMC14
ts1030
|
PDF
|
3XXXS
Abstract: Typ41 marking code JSW IDT70V9289 IDT70V9289L xsxx
Text: A . /s ilk |iB |B IB a F . 1 1 1 1 1 I W 0 WL HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9289L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location
|
OCR Scan
|
IDT70V9289L
5/9/12ns
IDT70V9289L
500mW
PK128-1)
70V9289
1024K
16-Bit)
3XXXS
Typ41
marking code JSW
IDT70V9289
xsxx
|
PDF
|
TME 87
Abstract: TME 87 I 46/SMC 5/TME 87 I TME 87 i 3
Text: EDI8F3265C ^ E D L 64Kx32 SRAM Module ELECTRONIC 06SIGN& MC. 64Kx32 Static RAM CMOS, High Speed Module F e a tu r e s 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM Random Access Memory module organized as 64Kx32. This module is constructed
|
OCR Scan
|
EDI8F3265C
64Kx32
06SIGN&
EDI8F3265C
64Kx32.
64Kx4
ED0F3265C
TME 87
TME 87 I
46/SMC 5/TME 87 I
TME 87 i 3
|
PDF
|
TME 87
Abstract: DESIGN OF TRAFFIC JAM DETECTION IN JAVA TME 87 I CONTENT16 traffic light controller java program TME 87 i 3 traffic light controller with aver TME 86
Text: monitor TRAFFICMONITOR - VIDEO IMAGE PR0CESS/WG SYSTEMS FOR REAL TIME TRAFFIC DATA COLLECTION TrafficMonitor-E Operating Manual Version 1.0 J O I N T - S T O C K C O M P A N Y RESEARCH CENTRE 2 Module and NeuroMatrix® are registered trademarks of Research Center MODULE.
|
OCR Scan
|
|
PDF
|
TME 87
Abstract: TME 87 I TME 57 pd233 tDH31
Text: EDI8F3265C ^ E D I ElfCTRONlC DtStGN i NC 64Kx32 SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The ED I8F3265C is a high speed 2 megabit Static R AM 64Kx32 bit C M O S Static module organized as 64Kx32. This module is constructed Random A cce ss Memory
|
OCR Scan
|
EDI8F3265C
64Kx32
30-Straight
54MNC
EDI8F3265C25MNC
EDI8F3265C35MNC
01581USA
323D114
TME 87
TME 87 I
TME 57
pd233
tDH31
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
|
OCR Scan
|
EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
|
PDF
|
TME 87
Abstract: 1ZD12 tme 126 30 oc9 002
Text: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based
|
OCR Scan
|
256KB
66MHz
CELP2X80CS3Z48
EDI8F6432C
32Kx64
EDI8F6432C
EDI8F6432C15MDC
EDI8F6432C20MDC
TME 87
1ZD12
tme 126
30 oc9 002
|
PDF
|
n74f646
Abstract: 74F245 74F374 N74F646N 3b1as
Text: Product «pacification Philip* Semlconductors-Slgnetlc* FAST Products Transceivers/registers 74F646/A/74F648/A 74F646/646A Octal transceiver/register, non-inverting 3-State 74F648/648A Octal transceiver/register, inverting (3-State) FEATURES data present at the high impedance port may
|
OCR Scan
|
74F646/A/74F648/A
74F646/646A
74F648/648A
74F245
74F374
74F646A/74F648A
24-pin
74F646/74F646A
74F648/74F648A
500ns
n74f646
N74F646N
3b1as
|
PDF
|
TME 87
Abstract: TME 87 I SEMIPACK1 SKKT42B12E SKKD100 SKKT57B16E SKKT57B12E TT 95 N 1200 semikron semipack3 SKKT57B12
Text: MHTEPTEKC www.i-t.su [email protected] Ten: T u p u c T o p H b ie m np0M3B0AMTenb electronics 495 739-09-95, 644-41-29 .q M O flH b ie M O fly n M ^ m p m u S E M IK R O N : SEMIKRON CepMn SKKT M o f l y ^ b c o c t o h t M3 A B y x t m p m c t o p o b , c o e flM H e H H N X n o c n e A O B a T e n b H O .
|
OCR Scan
|
SKKT15/16E
SKKT27/12E
SKKT27/16E
SKKT41/12E
SKKT42B12E
SKKT132/16E
SKKT162/12E
SKKT162/16E
SKKT250/16E
SKKT500/12E
TME 87
TME 87 I
SEMIPACK1
SKKD100
SKKT57B16E
SKKT57B12E
TT 95 N 1200
semikron semipack3
SKKT57B12
|
PDF
|
D028
Abstract: simm-30 timing EDI8F3265C25MZI t1is 64KX32 D010 D021 I8F3265C25M jedec 64-pin simm
Text: ELECTRONIC DESIGNS INC 51E 1 • 323D11M Ü001058 Sfl7 H E L D EDI8F3265C T -V i -23-/y ^ E D*slD I Bectrofìlc gra Inc." High Speed Two Megabit SRAM Module 64KX32 Static RAM CMOS, High Speed Module Features TheEDI8F3265Cisahighspeed2megabit Static RAM module organized as 64Kx32. This module is constructed
|
OCR Scan
|
3B3011W
EDI8F3265C
64KX32
TheEDI8F3265Cisahighspeed2megabit
64Kx32.
64Kx4StaticRAMsinSOJ
EDI8F3265C
T-46-23-14
EDI8F3265C20MZC
EDI8F3265C25MZC
D028
simm-30 timing
EDI8F3265C25MZI
t1is
D010
D021
I8F3265C25M
jedec 64-pin simm
|
PDF
|
tme 126
Abstract: TME 87 I 24C026 s/ksmh12/2.27/30/24C0G
Text: HB56HW164DB-6B/7B 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Preliminary Rev 0.0 Apr. 18, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165BTT) sealed in TSOP package and 1
|
OCR Scan
|
HB56HW164DB-6B/7B
576-Word
64-Bit
HB56HW164DB
16-Mbit
HM51W16165BTT)
24C0G)
TheHB56HW164-DB
H356HW164DB
is144-pin
tme 126
TME 87 I
24C026
s/ksmh12/2.27/30/24C0G
|
PDF
|
tme 126
Abstract: No abstract text available
Text: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Preliminary - Rev. 0.0 Feb. 02, 1996 Description The HB56UW272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been
|
OCR Scan
|
HB56UW272E-7B/8B
152-Word
72-Bit
168-pin
HB56UW272E
16-Mbit
HM51W17805BTT)
16-bit
74LVT16244)
tme 126
|
PDF
|
|
|
NCSL Z540.3
Abstract: E8363 N7832A E8356A E4436B network analyzer n3383a E6601A N7822A N7800A N4010A
Text: Agilent N7800A Calibration and Adjustment Software for Agilent RF/µW Instruments Agilent customers choosing to perform their own periodic maintenance performance verification and adjustments can now use the same automated software used in Agilent Service Centers.
|
Original
|
N7800A
14/minute
5989-6956EN
NCSL Z540.3
E8363
N7832A
E8356A
E4436B
network analyzer n3383a
E6601A
N7822A
N7800A
N4010A
|
PDF
|
d998 transistor
Abstract: transistor D998 d998 STR G 6352 str 6352 transistor p733 D1090 D1092 D1116 p733
Text: Catalogue back pages 2010-2:Layout 1 2/7/10 09:08 Page 197 APPROVALS INTERNATIONAL APPROVAL BODIES Denmark United Kingdom South Africa D.E.M.K.O B.S.I. Kitemark S.A. Bureau of Standards BS EN ISO 9001:2000 B.S.I. British Electro-Technical Approvals Board Sweden
|
Original
|
EC1907/2006,
d998 transistor
transistor D998
d998
STR G 6352
str 6352
transistor p733
D1090
D1092
D1116
p733
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics T o p o M A a n b H b ie T p a H C $ o p M a T o p b i a h a r a n o r e H H b ix n a M n T o p o M f l a n b H b i e T p a H c ^ o p M a T o p b i f l r m n M T a H M fl r a n o r e H H b i x n a M n
|
OCR Scan
|
u3u3000000000000
|
PDF
|
SU19
Abstract: No abstract text available
Text: 31~*1 ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1EBPQNEO Y 54A koal[`af_ [YhYZadalq Fad] Mg2>E57895; Y SU19 569UAC Yhhjgn]\ Zq TK klYf\Yj\ .gfdq ^gj 5 Fgje A/ Y VYk` la_`l Yf\ ^dmp hjgg^]\ lqh]k YnYadYZd] Fad] Mg2>Q9459:696 Y 5 Fgje A Yf\ 5 Fgje C [gf^a_mjYlagfk
|
Original
|
E57895;
569UAC
Q9459
RfN60
694UAC
74UDC
569UAC
426\Yj\
SU19
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx64,3.3V M o d u le Features Synchronous Flow-Through • 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 • Flow-Through Architecture position Card Edge DIMM 120 contacts Module, orga
|
OCR Scan
|
EDI2KG464128V
4x128Kx64
EDI2KG64128VxxD
4x128Kx64.
14mmx20mm
EDI2KG4G4128V95D*
EDI2KG464128V1QD'
EDI2KG464128V11D
EDI2KG464128V12D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^EDI ED/2KC418128V 1 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx18,3.3V Synchronous Flow-Through Module Features 4x128Kx18 Synchronous The EDI2KG418128VxxD2 is a Synchronous SRAM, 60 Flow-Through Architecture position Card Edge; DIMM 1 2 0 contacts module, orga
|
OCR Scan
|
4x128Kx18
10F11F
ED/2KC418128V
EDI2KG418128VxxD2
4x128Kx64.
4x128Kxl
|
PDF
|
939 Processor Functional
Abstract: RT611 R924
Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.
|
OCR Scan
|
MC68030
M68000
939 Processor Functional
RT611
R924
|
PDF
|
MC68030
Abstract: tme 126 M68000 MC68020 MC68851 939 Processor Functional
Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.
|
OCR Scan
|
MC68030
M68000
tme 126
MC68020
MC68851
939 Processor Functional
|
PDF
|
TME 87 0D
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
|
OCR Scan
|
64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60
HYM64V8045GU-50/-60
HYM72V8005GU-50/-60
HYM72V8045GU-50/-60
DM168-13
TME 87 0D
|
PDF
|
saab space packet wire
Abstract: 7693A tme 126 AT7909E LA 7693 AT7909EKA-E CPDU MH1RT SMART ASIC 197 telemetry command protocol
Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses
|
Original
|
16-bit
256-pin
saab space packet wire
7693A
tme 126
AT7909E
LA 7693
AT7909EKA-E
CPDU
MH1RT
SMART ASIC 197
telemetry command protocol
|
PDF
|