panametrics xmt 868
Abstract: honeywell stt25h prosonic RTT15 promag 50 STT25H panametrics promag 10 D699 STT17H
Text: IndustrialIT HART Device Type Managers for Freelance 800F and AC870P / Melody Data Sheet Revision : September 2010 The following Device Type Managers are interoperable with the beneath listed Freelance 800F and AC870P / Melody versions. Please see the M column for DTMs interoperable with AC870P / Melody and the F column for those interoperable with
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AC870P
panametrics xmt 868
honeywell stt25h
prosonic
RTT15
promag 50
STT25H
panametrics
promag 10
D699
STT17H
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krohne ifc 090
Abstract: Endress Hauser biffi actuator honeywell st3000 Yamatake honeywell honeywell CM42 xmt868 Yokogawa MAGNETROL vegason 62
Text: IndustrialIT FOUNDATION FIELDBUS Device Types for Freelance 800F Data Sheet Revision: July 2010 The following Device Types are interoperable with the Freelance 800F version 8.1 SP1, 8.2, 9.1 and 9.1RU1a. Freelance 800F Freelance 800F Freelance 8.1 SP1 FDT Base Container: 12.0.0.1
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2PAA103000
krohne ifc 090
Endress Hauser
biffi actuator
honeywell st3000
Yamatake honeywell
honeywell CM42
xmt868
Yokogawa
MAGNETROL
vegason 62
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Variable Area Rotameter
Abstract: fmx siemens MASONEILAN VALVE ultrasonic flow meter rtt 10 foxboro foxboro FLOW METER turbine masoneilan MASONEILAN SVI ii Vortex flowmeter panametrics xmt 868
Text: IndustrialIT System 800xA Device Management HART Data Sheet Integrated HART Devices Revision: September 2010 Device Revision Manufacturer ID Device ID 1/5 22 135 4-Electrode Cond. 2wire, IS, Field 1 26 36 TB82PH pH 1 18 80 TB82PH-Combined pH/ORP 2-wire 1 26
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800xA
TB82PH
TB82PH-Combined
TB82TC-Combined
TB82TE-Combined
LB491
X3301
3BDD013118
Variable Area Rotameter
fmx siemens
MASONEILAN VALVE
ultrasonic flow meter
rtt 10 foxboro
foxboro FLOW METER turbine
masoneilan
MASONEILAN SVI ii
Vortex flowmeter
panametrics xmt 868
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Untitled
Abstract: No abstract text available
Text: TMt »»OMU.TWM BCSOOOD W M WAS OUGMATU «V e t m w a w Tv o r o a jc o in o u s t » « , a n o c m f o a u o f f i u n m r c r a n t d t o t> « u n h i d s t a i b O M n i i w r , d a jo o m o u s t m i m uem a u . M T » rr, m o MUfTAftY, C C tO i. USL SNA UANUMCTUUNC AMO W f t
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DA0138
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BUK202-50Y
Abstract: buk20250y
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured
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BUK202-50Y
BUK202-50Y
buk20250y
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK451-100A/B
-100B
T0220AB
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S8818
Abstract: JS8818-AS
Text: Low Noise GaAs FET Chip Form JS8818-AS FEATURES: LOW NOISE FIGURE 1.4 d B a tf = 12 GHz 2.1 d B a tf = 18 GHz • HIGH ASSOCIATED GAIN 10 dB at f = 12 GHz 7.5 dB at f = 18 GHz 0.3 Mm GATE LENGTH CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 11 dB at f = 12 GHz 9.0 dB a t f = 18 GHz
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JS8818-AS
12GHz
18GHz
12GHz
RQR72SD
S8818
JS8818-AS
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Untitled
Abstract: No abstract text available
Text: C L 5 5 0 /C L 5 6 0 JPEG C o m p ressio n P ro c e s s o r U s e r’s M an u al % C-Cube M icro s y s te m s lTbHHb*! 0 0 0 0 6 2 2 • This document is preliminary. The specifications contained herein are derived from functional specifications and performance estimates, and
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2N1714
Abstract: 2N1716 2N1717 2N17H 2N1715
Text: MlLr-S-195001263A t,L, 15 MAY 1963 SUPERSEDING M IL -S-19500/263 (E L ) <l< PfDUII AD «V r u u n v/ m vV ± 10At MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714 THROUGH 2N1717 1. SCOPE 1.1 Scope. This specification covers th e detail requirem ents fo r silicon, N PN , tran sis•
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MIL-S-I9500/263A
MIL-S-19500/263
2N1714
2N1717
2N1714.
2N1715.
2N1716.
2N1716
2N1717
2N17H
2N1715
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7628-55
OT404
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BUK9628
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9628-55
BUK9628
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k 246 transistor fet
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7675-55
k 246 transistor fet
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9675-55
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k 246 transistor fet
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance
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BUK7575-55
-T0220A
k 246 transistor fet
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CL-200G-C
Abstract: CL-230LY-CD CL-220FG-C CL-220HR-C CL-220Y-C CL-190UB-X CL-190UR-CD l200dc CL-220PG CL-200yc
Text: SE* O' 3? :0:3T V H «RDM;RY03i<! Ti’ wNC [ t ; - / t 10 .Sri ffit.'i *S5-4f3iZiÌ5 i i ;K ; 5 4 .V * •H !, G a N * L E D * * * m v fc j» * * S f - '^ L E D 'C T 0 e. 1 ■ F v e tu rs a ir <mA) ImA) 78 m *00« typ« USO atom««*» 2. Ught omttted m Wue or groan.
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RY03i<
-f-85
CL-200G-C
CL-230LY-CD
CL-220FG-C
CL-220HR-C
CL-220Y-C
CL-190UB-X
CL-190UR-CD
l200dc
CL-220PG
CL-200yc
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ic 817
Abstract: tc9180n tc9173p tc9174 TC9302F toshiba TC 9174p TC9174P ic 807 TC9173 TC9302AF
Text: TOSHIBA-. ELECTRONIC 05 m m m m s ^ ^ r n m e s r n s s m s DËJ ', - D01flSb3 5 . • r-Hi-n-si DTS MICRO CONTROLLER CONTAINING LCD DRIVER Unit in mm The TC9302AF'is 4 bit CMOS micro controller for digital tuning system use having built-in LCD driver. CPU has 4 bit parallel addition and
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TC9302AF
16K/3ZK/64K
ic 817
tc9180n
tc9173p
tc9174
TC9302F
toshiba TC 9174p
TC9174P
ic 807
TC9173
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ECG861
Abstract: ecg jfet
Text: P H IL I P S E C G INC 17E ECG • ^53=120 000S03Ô 1 ■ 7 '- ^ / - / / ECG861 Quad Single Pole Analog Sw Sem iconductors Features • Analog signals are not loaded • Constant "O N " resistance for signals up to ±10 V and 100 kHz • Sm all signal analog signals to 50 MHz
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000S03Ã
ECG861
ECG861
ecg jfet
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diode Kl04
Abstract: No abstract text available
Text: P H I L IP S E C G INC 17 E ECG Sem iconductors 0 • ^ 53=123 000503 A 1 ■ 7 '- ^ / - / / ECG861 Quad Single Pole Analog Sw Features • Analog signals are not loaded • Constant "ON" resistance for signals up to ±10 V and 100 kHz • Small signal analog signals to 50 MHz
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ECG861
0S047
ECG861
diode Kl04
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bg 22 transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK203-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK203-50Y
3-50Y
bg 22 transistor
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51L33
Abstract: No abstract text available
Text: INTEGRATED TO SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT DATA TC9309AF SILICON MONOLITHIC SINGLE CHIP DTS MICROCONTROLLER DTS-10 The TC9309AF is a 4bit CMOS microcontroller for single chip digital tuning system with built-in prescaler, PLL and
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TC9309AF
DTS-10)
TC9309AF
80pin
QFP80-P-1420-0
TC93Q9AF
51L33
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2SC1815
Abstract: 2SC945 C1815 NJM2252 SDIP22 TP10 tr c1815
Text: Z9 L“Ç g fü K z g jg ZZ I-.f-BffíYWO W O +A ON IZ oz 61 81 ¿I 91 SI H Zvr-SftíY W o ZIAS £-;.- s ffíY w a -i/— o 4 < c < WO •/w w w o ON II OI »••HSffíYWA £M S 6 8 L 9 S * Z J.-üffíYW A N iS/-< é 6 e - ;- » V Y * A (W A ) +A Iv H S f V Y W A
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NJM2252
SDIP22
NJM2252
2SC1815
2SC945
C1815
TP10
tr c1815
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4728 G Bipolar-IC Overview Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Output stages are free of crossover current
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P-DSO-24-3
Q67006-A9077
fl235b05
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PCM56P
Abstract: No abstract text available
Text: For Im m a n e Assistance, Conimi four Local Salesperson B U R R -B R O W N PCM56P PCM56U 1 [ DESIGNED FOR AUDIO Serial Input 16-Bit Monolithic DIG ITAL-TO-ANALOG CONVERTER FEATURES • SERIAL INPUT • -92dB MAX THD: FS Input, K Grade, 16 Bits • -74dB MAX THD: -20dB Input, K Grade,
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PCM56P
PCM56U
16-Bit
-92dB
-74dB
-20dB
15-BIT
17313L5
PCM56P
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diode PJ 41 MG
Abstract: ICX045BKA ICX045AK CCD Sony XC ICX045 Color Filter Array CFA
Text: ICX045BKA SONY« 1/3 inch CCD Image Sensor for PAL Color Camera P ack ag e O utline D e s c r ip t io n The ICX045BKA is an interline transfer CCD solid-state image sensor suitable for PAL 1/3 inch color video cameras. High sensitivity is achieved through the
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ICX045BKA
ICX045AK)
00Db3Ã
diode PJ 41 MG
ICX045AK
CCD Sony XC
ICX045
Color Filter Array CFA
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