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    TNS CAPACITORS Search Results

    TNS CAPACITORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    TNS CAPACITORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tns capacitors

    Abstract: .1J 100v 344 capacitors
    Text: Axial Type Aluminum Electrolytic Capacitors TNS ‫! ޜ‬Ӳ !፿! ፔ! ႋ! ာ! ႋ! ী! Ꮒ Non-polarized Type Features •85℃, 1,000 hours assured 85℃1000 小時壽命保證 •Non-polarized, suitable for use in circuits whose polarity is sometimes reversed or unknown.


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    120Hz) tns capacitors .1J 100v 344 capacitors PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    P1819

    Abstract: No abstract text available
    Text: OCT 2« *»2 MOTOROLA O rd e r th is d o c u m e n t b y D S P 5 6 4 0 1 /D SEMICONDUCTOR — • TECHNICAL DATA DSP56401 AES/EBU/CP340 Digital Audio Transceiver The DSP56401 is a low cost, digital audio transceiver system which is compatible with the AES/EBU and EIAJ CP340 digital audio transmission


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    DSP56401 AES/EBU/CP340 DSP56401 CP340 P1819 PDF

    piezoelectric humidifier CIRCUITS

    Abstract: piezoelectric humidifier Ultrasonic humidifier circuit tns capacitors ultrasonic humidifier mobile phone ultrasonic POWER FERRITE TRANSFORMERS flyback inverter welding PTC SY microwave motion sensors
    Text: Contents Mobile Communication Devices. 3 EMI Prevention Components. 9 Ceramic Capacitors. 13 1 13 Ferrite Cores, Amorphous Magnetic Cores. 15


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    QVC10 CU405 CU406 RX-11A, piezoelectric humidifier CIRCUITS piezoelectric humidifier Ultrasonic humidifier circuit tns capacitors ultrasonic humidifier mobile phone ultrasonic POWER FERRITE TRANSFORMERS flyback inverter welding PTC SY microwave motion sensors PDF

    tns capacitors

    Abstract: circuit of single phase photovoltaic inverter 7P-23 spark-gap spark gap 100 kv spark gap switch SURGE ARRESTER spark gap high voltage sparkgap switches IIMP1
    Text: 7P Series - Surge Protection Device SPD Features 7P.21.8.275.1020 7P.22.8.275.1020 SPD Type 2 Surge arrester range - single phase systems Surge arrester suitable for 230V system/ applications • Protects equipment against overvoltage caused by lightning strikes or switching transients


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    tns capacitors

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE MH4V32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V32CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of 8 industry standard 4M x 4 dynamic RAMs in TSOP.


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    MH4V32CJJ-5 134217728-BIT 4194304-WQRD 32-BIT) MH4V32CJJ 4194304-word 32-bit MH4V32CJJ-6 MH4V32CJJ-7 tns capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE MH4M32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.


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    MH4M32CJJ-5 134217728-BIT 4194304-WQRD 32-BIT) MH4M32CJJ 4194304-word 32-bit MH4M32CJJ-6, MH4M32CJJ-7 PDF

    tns capacitors

    Abstract: BlueWalker
    Text: Product Information PowerWalker VFI 80000 TAP 3/3 BX Online UPS 80000VA Online UPS Leading Power Factor for modern IT Data Centers Hot Parallel Connection - sharing load without communication between UPS Energy-efficient performance lowers operating costs


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    80000VA D-41470 RS-232 tns capacitors BlueWalker PDF

    JS-2001-06

    Abstract: tns capacitors jst xhp-6 S200-03 VPF-S200-48 555A plug VPF-S200-03 VPF-S200-05 VPF-S200-12 VPF-S200-24
    Text: • Model VPF-S200-03 VPF-S200-05 VPF-S200-12 VPF-S200-24 VPF-S200-48 VPF-S200-XX U-Frame Power Supply Output 3 - 4V 5 - 6V 12 - 16V 24 - 30V 36 - 56V Output Current 0.5A 0.5A 0.5A 0.5A 0.5A Output Current 30A 40A 16.7A 8.34A 5.55A Regulation +/- 1% +/- 1%


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    VPF-S200-03 VPF-S200-05 VPF-S200-12 VPF-S200-24 VPF-S200-48 VPF-S200-XX 50mVpp 110VAC EN61000-3-2 JS-2001-06 tns capacitors jst xhp-6 S200-03 VPF-S200-48 555A plug VPF-S200-03 VPF-S200-05 VPF-S200-12 VPF-S200-24 PDF

    BA684A

    Abstract: ic level audio meter current comparator ic 20 led resistor meter
    Text: LED level meter driver, 8-point, linear scale BA684A The BA684A monolithic 1C is an 8-point, bar-type LED level meter driver. Dimensions Units : mm BA684A (DIP16) The IC is provided with two inputs. A comparator is used to determine the larger signal. The larger signal is used to


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    BA684A BA684A DIP16) DIP16 765flcm ic level audio meter current comparator ic 20 led resistor meter PDF

    MOSFET J162

    Abstract: j162 MOSFET J147
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


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    AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147 PDF

    0203S

    Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
    Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


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    AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147 PDF

    88882

    Abstract: No abstract text available
    Text: LG Semicon Co.,Ltd. Description The GMM7321000BS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pm SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000BS/SG is optimized for application to the systems


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    GMM7321000BS/SG-60/70/80 GMM7321000BS/SG GMM7321000BS/ GMM7321000BS GMM7321OOOBSG GMM7321000BS/SG P-i75; 88882 PDF

    MOSFET J162

    Abstract: J473 MOSFET J147
    Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


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    AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147 PDF

    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


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    AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE MH4V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 134217728-BIT (4194304-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V325CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.


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    MH4V325CJJ-5 134217728-BIT 4194304-WORD 32-BIT) MH4V325CJJ 32-bit MH4V325CJJ-6 MH4V325CJJ-7 PDF

    AGR045010

    Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
    Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


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    AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD._ Description Features The GMM7324210BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assem bled 8 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7324210BNS/SG is


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    GMM7324210BNS/SG GMM7324210BNS/SG GMM732421OBNS GMM732421OBNSG PDF

    Untitled

    Abstract: No abstract text available
    Text: File E135803 Vol. 2 Sec. 2 and Report Page 1 Issued: Revised: 2000-01-11 2006-02-14 DESCRIPTION PRODUCT COVERED: Component - Switching Power Supplies for Use in Information Technology Equipment, Models GPM40A, GPM40B, GPM40D, GPC40A, GPC40B, GPC40D, GPC40-X and


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    E135803 GPM40A, GPM40B, GPM40D, GPC40A, GPC40B, GPC40D, GPC40-X GPM40-X PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE MH4M32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The M H 4 M 3 2 C J J is 4 1 9 4 3 0 4 -w o rd by 32-bit dynamic R AM module. Th at module consists o f nine industry standard 4 M


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    MH4M32CJJ-5 134217728-BIT 4194304-WORD 32-BIT) 32-bit 72-pin MH4M32CJJ PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is <DRAM MODULE MH4V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V325CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.


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    MH4V325CJJ-5 134217728-BIT 4194304-WQRD 32-BIT) MH4V325CJJ 4194304-word 32-bit MH4V325CJJ-6 MH4V325CJJ-7 PDF

    GMM7322010C

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GMM7322010CS/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7322010CS/SG is


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    GMM7322010CS/SG 7322010CS/SG GMM7322010CS/SG GMM7322010CS GMM7322010CSG 11111111111111111irrvi GMM7322010C PDF

    Untitled

    Abstract: No abstract text available
    Text: P r e lim in a r y S p e „ M it s u b is h i l s is MH4V7245DATJ-5,5S -6,6S -7,7S Some of contents are subject to change without notice. _HYPER PAGE MODE 301989888-BIT 4194304-BIT BY 72-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH4V7245DATJ is 4194304-word x 72-bit dynamic


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    MH4V7245DATJ-5 301989888-BIT 4194304-BIT 72-BIT) MH4V7245DATJ 4194304-word 72-bit 16bits 85pin PDF

    A1 GNC

    Abstract: tns capacitors
    Text: K F B i MICRO »DEVICES RF2114 MEDIUM POWER LINEAR AMPLIFIER T y p ica l A p p lic a tio n s • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems Commercial and Consumer Systems • Driver for Higher Power Linear Applications


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    RF2114 RF2114 600MHz. A1 GNC tns capacitors PDF