br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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MTP50N05E
Abstract: transistor MTP50N05E MTP50N05 MTP75N05HD equivalent MTP50N06E low voltage power transistor HDTMOS MTP50N05E equivalent MTP75N05HD RFG70N06
Text: EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of
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EB201/D
r14525
MTP50N05E
transistor MTP50N05E
MTP50N05
MTP75N05HD equivalent
MTP50N06E
low voltage power transistor
HDTMOS
MTP50N05E equivalent
MTP75N05HD
RFG70N06
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pj 89 diode
Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct
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OT-23
TN2101K1
TN2106K1
TN2124K1
TP2106K1
VN2110K1
VP2110K1
-10ack
HV9111
HV9112
pj 89 diode
HV7708PG
HV7808
pj 44 diode
HV5808
VQ10003
VN 300
tp2106
220v ac to 9v dc converter
pj 56 diode
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRFE6P9220H
MRFE6P9220HR3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110
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MRF5S21130/D
MRF5S21130
MRF5S21130R3
MRF5S21130S
MRF5S21130SR3
MRF5S21130SR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF6P9220H
MRF6P9220HR3
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uPD16879
Abstract: VP15-00-3
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16879 MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT The µPD16879 is a monolithic quad H bridge driver IC that employs a CMOS control circuit and a MOSFET output circuit. Because it uses MOSFETs in its output stage, this driver IC consumes less power than conventional driver
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PD16879
PD16879
64-step
38-pin
uPD16879
VP15-00-3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21180 Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF21180
MRF21180R6
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atc100B102J
Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2010N
MRF6V2010NR1
MRF6V2010NBR1
MRF6V2010NR1
atc100B102J
atc100b102jt50x
ATC200B393KT50XT
ATC200B223KT50XT
MRF6V2010N
A113
A114
A115
C101
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21180/D
MRF21180
MRF21180S
MRF21180/D
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J698
Abstract: NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi
Text: Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF6P9220H
MRF6P9220HR3
J698
NIPPON CAPACITORS
A114
A115
AN1955
C101
JESD22
MRF6P9220HR3
Nippon chemi
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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MRF6V2300N
Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are
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MRF6V2300N
MRF6V2300NB
MRF6V2300NB
AN3263
A113
A114
A115
AN1955
C101
JESD22
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MRF6V2300NB
Abstract: MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N MRF6V2300NR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 2, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2300N
MRF6V2300NR1
MRF6V2300NBR1
MRF6V2300NR1
MRF6V2300NB
MRF6V2300NBR1
A113
A114
A115
AN1955
C101
JESD22
MRF6V2300N
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j550
Abstract: J695 A113 A114 A115 AN1955 C101 JESD22 MRF6V2150N MRF6V2150NBR1
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 1, 5/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2150N
MRF6V2150NR1
MRF6V2150NBR1
MRF6V2150NR1
j550
J695
A113
A114
A115
AN1955
C101
JESD22
MRF6V2150N
MRF6V2150NBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V2150N
MRF6V2150NR1
MRF6V2150NBR1
MRF6V2150NR1
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mitsumi fe415-g11
Abstract: Mitsumi fm IFT fe415-g11
Text: INTEGRATED CIRCUITS DATA SHEET TEA5762 Self Tuned Radio STR Product specification Supersedes data of 1995 Jun 23 File under Integrated Circuits, IC01 1999 Aug 04 Philips Semiconductors Product specification Self Tuned Radio (STR) TEA5762 FEATURES • High impedance MOSFET input on AM
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TEA5762
545002/02/pp32
mitsumi fe415-g11
Mitsumi fm IFT fe415-g11
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P20180HR6. H suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P20180R6 RF Power Field Effect Transistor 1990 MHz, 38 W AVG.,
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MRF5P20180/D
MRF5P20180HR6.
MRF5P20180R6
Channel2003
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MTP12P10
Abstract: AN569
Text: MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P–Channel TO–220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds – Switching Times Specified
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MTP12P10
r14525
MTP12P10/D
MTP12P10
AN569
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Untitled
Abstract: No abstract text available
Text: APM9938K Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description D1 D1 D2 D2 N-Channel 20V/10A, RDS(ON)=13mΩ (typ.) @ VGS=4.5V RDS(ON)=22mΩ (typ.) @ VGS=2.5V • S1 G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35mΩ (typ.) @ VGS=-4.5V
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APM9938K
0V/10A,
-20V/-6A,
APM9938
JESD-22,
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NTP5N60
Abstract: No abstract text available
Text: NTP5N60 Preferred Devices Product Preview Power MOSFET 5 Amps, 600 Volts N–Channel TO–220 http://onsemi.com Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 5 AMPERES
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NTP5N60
r14525
NTP5N60/D
NTP5N60
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TL1454
Abstract: No abstract text available
Text: TL1454, TL1454Y DUAL-CHANNEL PULSE-WIDTH-MODULATION PWM CONTROL CIRCUIT SLVS086B – APRIL 1995 – REVISED NOVEMBER 1997 D D D D D D D D, N OR PW PACKAGE (TOP VIEW) Two Complete PWM Control Circuits Outputs Drive MOSFETs Directly Oscillator Frequency . . . 50 kHz to 2 MHz
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TL1454,
TL1454Y
SLVS086B
TL1454
TL1454EVM-085
et/20001221/11272000/TXII/11272000/tl1454
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MTP20N15E
Abstract: No abstract text available
Text: MTP20N15E Preferred Device Power MOSFET 20 Amps, 150 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for
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MTP20N15E
r14525
MTP20N15E/D
MTP20N15E
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SPICE QT 52 CIRCUIT DIAGRAMS
Abstract: N03-06 MTB1306 MTP1306 NTB75N03-06 NTP75N03-06
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal
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NTP75N03-06,
NTB75N03-06
r14525
NTP75N03
SPICE QT 52 CIRCUIT DIAGRAMS
N03-06
MTB1306
MTP1306
NTB75N03-06
NTP75N03-06
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