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    onsemi FGH75T65SQDTL4

    Field Stop Trench IGBT 650V Collector Emitter Voltage 75A Collector Current 4-Pin TO-
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    TO 225 EMITTER Datasheets Context Search

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    TVV020

    Abstract: transistor B A O 331 d 331 transistor 1080 ASI10659 406G
    Text: TVV020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV020 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD 45° FEATURES: A D • Common Emitter • PG = 8.0 dB at 20 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV020 TVV020 ASI10659 transistor B A O 331 d 331 transistor 1080 ASI10659 406G

    Untitled

    Abstract: No abstract text available
    Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030 TVV030

    TVV030

    Abstract: ASI10660
    Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030 TVV030 ASI10660

    TVV005

    Abstract: ASI10654 TRANSISTOR A 225
    Text: TVV005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV005 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 15 dB at 5.0 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV005 TVV005 ASI10654 TRANSISTOR A 225

    RT6105

    Abstract: RT6105X
    Text: RT6105X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI RT6105X is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 15 dB at 5.0 W/225 MHz • Omnigold Metalization System


    Original     		PDF RT6105X RT6105X RT6105

    Untitled

    Abstract: No abstract text available
    Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030 TVV030 ASI10660

    Untitled

    Abstract: No abstract text available
    Text: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV014A TVV014A

    ferroxcube 56-590-65

    Abstract: UT25 coaxial 2N6439 UT25 VK200
    Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    Original     		PDF 2N6439/D 2N6439 ferroxcube 56-590-65 UT25 coaxial 2N6439 UT25 VK200

    TVV010

    Abstract: imd1
    Text: TVV010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV010 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .380 4L STUD .112x45° A D B FEATURES: S • Common Emitter • PG = 10 dB at 10 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV010 TVV010 112x45° ASI10656 imd1

    TVV014A

    Abstract: ASI10658
    Text: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV014A TVV014A ASI10658

    TVV100

    Abstract: ASI10662
    Text: TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV100 TVV100 ASI10662

    TVV007

    Abstract: ASI10655
    Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • 5:1 VWR capability • PG = 10 dB at 7.5 W/225 MHz


    Original     		PDF TVV007 TVV007 ASI10655 ASI10655

    ASI10657

    Abstract: TVV014
    Text: TVV014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R FEATURES: D • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV014 TVV014 ASI10657

    SD1456

    Abstract: No abstract text available
    Text: SD1456 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1456 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System


    Original     		PDF SD1456 SD1456

    Untitled

    Abstract: No abstract text available
    Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • PG = 10 dB at 7.5 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV007 TVV007 ASI10655

    TVV030A

    Abstract: IC 555 ASI10661
    Text: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030A TVV030A IC 555 ASI10661

    Untitled

    Abstract: No abstract text available
    Text: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030A TVV030A

    VTV1250

    Abstract: 125W225
    Text: VTV1250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 8L FLG DESCRIPTION: C D The ASI VTV1250 is Designed for Television Band III Applications up to 225 MHz. A B 1 2 G FULL R O F E .1 25 • Common Emitter • PG = 12 dB at 125 W/225 MHz • Omnigold Metalization System


    Original     		PDF VTV1250 VTV1250 125W225

    2N6439

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		PDF 2N6439

    2N6439

    Abstract: UT25 coaxial VK200 ferrite choke
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		PDF 2N6439 Collector-B400 2N6439 UT25 coaxial VK200 ferrite choke

    2N6439

    Abstract: vk200* FERROXCUBE
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6439 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for w ideband large-signal output am plifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		PDF 2N6439 2N6439 vk200* FERROXCUBE

    2N6439

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		PDF 2N6439/D 2N6439 2N6439

    2N3402

    Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3402 2n3404 2N3405 2N3403 2N3638 N3404

    2N2713

    Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N2926 equivalent 2n2714 transistor 2N3404 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor