D882 TRANSISTOR
Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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D882 TRANSISTOR
transistor D882
D882
transistor D882 datasheet
br d882 to-126
TRANSISTOR br D882
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d882 power transistor
datasheet d882
NPN TRANSISTOR D882
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM : 1. EMITTER 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40
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d882
Abstract: TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor
Text: D882 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 2. COLLECTOR 3.200 10.60 0 11.00 0 3. BASE 3 0.000 0.300 2 Features 1 2.100 2.300 Power dissipation 1.170 1.370 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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transistor D882
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D882 TRANSISTOR
TO-126 D882
d882 npn transistor
d882 power transistor
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N E C D882
Abstract: br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882
Text: M C C TO-126 P lastic-E n cap su late T r a n s is t o r s ^ D882 TRANSISTOR NPN FE A T UR E S Pow er d issip ation TO-126 Pcm : 1.25W (Tamb=25“C ) Collector current 1.E M I T T E R lew: 3 A 2.C O L L E C T O R Collector-base voltage V(BR)CBO; 40 V 3.B A S E
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N E C D882
br d882 p
D882 TRANSISTOR
TRANSISTOR D882 t p
br d882 to-126
D882 tp
P H D882
TRANSISTOR br D882
br d882
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br d882 p
Abstract: D882 TRANSISTOR TRANSISTOR D882 input D882 P transistor "D882 p" N E C D882 transistor D882 K D882 Y BR D882 S D882 q
Text: TO-126 Plastic-Encapsulate Transistors^ D 8 8 2 T R A N S IS T O R N P N FEATURES Power dissipation TO-126 1.25W (Tamb=25°C) Pcm : C o llecto r current 1.EMITTER Icm: ¿.COLLECTOR 3 A C ollector-base voltage 3 .BASE V(BR)CBO; 40 V O perating and storage ju n ctio n tem perature range
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O-126
O-126
br d882 p
D882 TRANSISTOR
TRANSISTOR D882 input
D882 P
transistor "D882 p"
N E C D882
transistor D882
K D882 Y
BR D882 S
D882 q
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D882 TRANSISTOR
Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range
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Coll00
290TYP
090TYP
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transistor D882 datasheet
D882 p
br d882
D882
br d882 p
transistor "D882 p"
TRANSISTOR D882
TRANSISTOR br D882
7400
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D882Y
Abstract: D882-y D882R TRANSISTOR D882-y KSD882YSTU D882-R
Text: KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage
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KSD882
KSB772
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PW10ms,
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KSD882
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KSD882RS
KSD882YS
D882Y
D882-y
D882R
TRANSISTOR D882-y
KSD882YSTU
D882-R
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D882Y
Abstract: D882G D882-y D882g transistor D882R D882O KSD882YSTU KSD882GSTU KSB772 KSD882
Text: KSD882 NPN Epitaxial Silicon Transistor Recommended Applications • Audio Frequency Power Amplifier Featuers • Low Speed Switcing • Complement to KSB772. TO-126 1 1. Emitter Absolute Maximum Ratings* Symbol 2.Collector 3.Base Ta = 25°C unless otherwise noted
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D882g transistor
D882R
D882O
KSD882YSTU
KSD882GSTU
KSB772
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transistor D882
Abstract: d882* npn transistor 2SD882
Text: 2SD882 NPN medium power transistor Features • High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter 3 2 1 SOT-32 TO-126 Figure 1.
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2SD882
2SB772
OT-32
O-126)
2SB772.
transistor D882
d882* npn transistor
2SD882
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2SD882
Abstract: D882 PNP TRANSISTOR D882 q D882 sot br d882 p D882 TRANSISTOR PNP D882 CIRCUIT DIAGRAM D882 D882 TRANSISTOR TRANSISTOR D882
Text: 2SD882 NPN medium power transistor Features • High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter 3 2 1 SOT-32 TO-126 Figure 1.
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2SB772
OT-32
O-126)
2SB772.
2SD882
D882 PNP TRANSISTOR
D882 q
D882 sot
br d882 p
D882 TRANSISTOR PNP
D882 CIRCUIT DIAGRAM
D882
D882 TRANSISTOR
TRANSISTOR D882
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d882 051
Abstract: D882 br d882 D882 SPECIFICATION d882 npn 2D882 transistor D882 datasheet D882 P transistor d882 Plastic Encapsulate Transistors
Text: D882 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 3.2±0.2 8.0±0.2 2.0±0.2 4.14±0.1 Features O2.8±0.1 11.0±0.2 O3.2±0.1 1.4±0.1 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted
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d882 051
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br d882
D882 SPECIFICATION
d882 npn
2D882
transistor D882 datasheet
D882 P
transistor d882
Plastic Encapsulate Transistors
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2SD882
Abstract: 2SB772
Text: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 * “G” Lead Pb -Free 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol
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2SB772
2SD882
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D882
Abstract: transistor D882 datasheet d882Y K D882 Y D882 SPECIFICATION D882-y D882 Y d882 equivalent datasheet d882 transistor d882
Text: SEMICONDUCTOR KTD882 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K D882 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D882 KTD882 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009
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D882 SPECIFICATION
D882-y
D882 Y
d882 equivalent
datasheet d882
transistor d882
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2SD882 pnp
Abstract: 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77
Text: 2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO
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D882
b772 p
J D882
transistor D882 datasheet
2SB77
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Untitled
Abstract: No abstract text available
Text: Hi-Flow 330P Electrically Insulating,High Performance,Thermally Conductive Phase Change Material Features and Benefits T YPICAL PROPERT IES OF H I-FLOW 330P • Thermal impedance: 0.18°C-in 2/W @25 psi • Natural tack for ease of assembly • Exceptional thermal performance in an
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HF330P
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Abstract: No abstract text available
Text: Hi-Flow 650P Electrically Insulating, High Performance,Thermally Conductive Phase Change Material Features and Benefits TYPICAL PROPERTIES OF HI-FLOW 650P • Thermal Impedance: 0.20°C-in2/W @25 psi • 150°C high temperature reliability • Natural tack one side for ease of assembly
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UL 486d
Abstract: E102356 D882A tubing COLOR ULTIMATE ASTM D2240
Text: 3M Heavy Wall Heat Shrink Tubing ITCSN Data Sheet June 2011 Description 3M™ Heavy Wall Heat Shrink Tubing ITCSN is designed to provide reliable performance for electrical splices, connections, and terminations, as well as mechanical and environmental protection. This tubing is fabricated from crosslinked polyolefin. The tubing is highly split-resistant and fast-shrinking to provide
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PAL 007 pioneer
Abstract: pioneer PAL 007 A PAL 008 pioneer sn 7600 n 648-0482211 sem 2106 Trays tsop56 TSOP 86 land pattern amd socket 940 pinout Meritec 980020-56
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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pioneer PAL 007 A
Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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land pattern for TSOP 2-44
Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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TSOP-48 pcb LAYOUT
Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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Abstract: No abstract text available
Text: SPDG_Cover_0511 v7.qxp 6/22/2011 12:25 PM Page 2 Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E SPDG_Cover_0511 v7.qxp 6/22/2011 12:25 PM Page 3 June 2011 All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE
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