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    TO-223 MOSFET Search Results

    TO-223 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TO-223 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    Untitled

    Abstract: No abstract text available
    Text: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223


    Original     		PDF STN1NK60Z, STQ1NK60ZR-AP OT-223 STN1NK60Z OT-223 AM01476v1 DocID9509

    LE2V

    Abstract: STN7NF10
    Text: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and


    Original     		PDF STN7NF10 OT-223 LE2V STN7NF10

    P008B DIODE

    Abstract: STN7NF10
    Text: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and


    Original     		PDF STN7NF10 OT-223 P008B DIODE STN7NF10

    std2n52

    Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06


    Original     		PDF OT-82 OT-223 O-220 220TM O-220FP MAX220TM 218TM O-247 MAX247TM STB80NE03L-06 std2n52 stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    ste30na50-DK

    Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 2 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 220TM O-220 MAX220TM 218TM O-247 MAX247TM Max247 Max220 ste30na50-DK ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06

    shd225502

    Abstract: shd2259
    Text: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM150


    Original     		PDF SHD2259 SHD225502 IRFM150 O-254 O-254 shd225502 shd2259

    d1nk8

    Abstract: D1NK80Z N1NK80Z Q1NK80ZR STD1NK80ZT4 STD1NK80Z-1 STD1NK80Z STN1NK80Z S 0319 Benchmark
    Text: STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V


    Original     		PDF STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 /SOT-223/DPAK/IPAK OT-223 d1nk8 D1NK80Z N1NK80Z Q1NK80ZR STD1NK80ZT4 STD1NK80Z-1 S 0319 Benchmark

    ac-dc

    Abstract: pC817 PSpice p1015ap PC817 pspice model bsc flyback universal footprint for transformer in orcad p1015a universal smps diagrams NCP1015 BAT54
    Text: NCP1015 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP1015 integrates a fixed-frequency current-mode controller and a 700 V voltage MOSFET. Housed in a PDIP-7 or SOT-223 package, the NCP1015 offers everything needed to build a


    Original     		PDF NCP1015 NCP1015 OT-223 NCP1015/D ac-dc pC817 PSpice p1015ap PC817 pspice model bsc flyback universal footprint for transformer in orcad p1015a universal smps diagrams BAT54

    JESD97

    Abstract: STD1LNK60Z-1 STN1NK60Z STQ1NK60ZR-AP
    Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z O-251 OT-223 STQ1NK60ZR-AP JESD97 STD1LNK60Z-1 STN1NK60Z

    IRFM150

    Abstract: SHD225502
    Text: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM150


    Original     		PDF SHD225502 SHD2259 IRFM150 250mA IRFM150 SHD225502

    d1nk8

    Abstract: D1NK80Z N1NK80Z STD1NK80Z-1 STMicroelectronics marking code date SOT 23 A1 SOT-223 MOSFET STQ1NK80ZR-AP zener diode sot 23 STD1NK80ZT4 d1nk80
    Text: STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V


    Original     		PDF STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 /SOT-223/DPAK/IPAK STQ1NK80ZR-AP STD1NK80Z OT-223 d1nk8 D1NK80Z N1NK80Z STD1NK80Z-1 STMicroelectronics marking code date SOT 23 A1 SOT-223 MOSFET zener diode sot 23 STD1NK80ZT4 d1nk80

    d1nk8

    Abstract: d1nk80z n1nk80z STD1NK80ZT4
    Text: STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1


    Original     		PDF STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 /SOT-223/DPAK/IPAK OT-223 d1nk8 d1nk80z n1nk80z STD1NK80ZT4

    diode MARKING A10

    Abstract: sot marking a10 TSM1N80CW 800v mosfet MOSFET 800V 3A TSM1N80 id 0835 MOSFET 800V 15A diode 800v A10 SOT
    Text: TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 800 21.6 @ VGS =10V ID (A) 0.15 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM1N80 OT-223 TSM1N80 diode MARKING A10 sot marking a10 TSM1N80CW 800v mosfet MOSFET 800V 3A id 0835 MOSFET 800V 15A diode 800v A10 SOT

    1Nk60

    Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
    Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z O-251 OT-223 STQ1NK60ZR-AP 1Nk60 1NK60Z 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220F2 OT-223 O-220 O-220F QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF OT-223 O-220 O-220F O-251 O-251L QW-R502-579

    n1hnk60

    Abstract: d1nk6 stn1hnk60 D1NK60 1hnk60r sot 223 52 10a STD1NK60-1 STN1H n1hnk STD1NK60
    Text: STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on 600 600 600 600


    Original     		PDF STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 DPAK/TO-92/IPAK/SOT-223 STD1NK60 STQ1HNK60R n1hnk60 d1nk6 stn1hnk60 D1NK60 1hnk60r sot 223 52 10a STD1NK60-1 STN1H n1hnk

    Untitled

    Abstract: No abstract text available
    Text: RT9172 Preliminary 3A Fixed Output Voltage LDO Regulator Ordering Information RT9172 - Package Type T5 : TO-220-5 M5 : TO-263-5 T : TO-220 M : TO-263 G : SOT-223 S : SOP-8 Operating Temperature Range P : Pb Free with Commercial Standard G : Green Halogen Free with Commercial Standard


    Original     		PDF RT9172 O-220-5 O-263-5 O-220 O-263 OT-223 O-263 O-220 Over-temperature/O157

    TSM1NB60CW

    Abstract: N-Channel mosfet 600v 1a TSM1NB60 TSM1NB60CWRPG TSM1NB60CP
    Text: TSM1NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 10 @ VGS =10V 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


    Original     		PDF TSM1NB60 O-251 O-252 OT-223 TSM1NB60 TSM1NB60CH TSM1NB60CP O-251 75pcs TSM1NB60CW N-Channel mosfet 600v 1a TSM1NB60CWRPG

    SSM3055L

    Abstract: MosFET
    Text: SSM3055L 2.8A , 60V , RDS ON 100 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-223 The SSM3055L utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original     		PDF SSM3055L OT-223 SSM3055L 3055L 26-Jul-2013 MosFET

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-GE3 SiHFL9014-E3 irfl9014trpbf IRFL9014PBF
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 G D G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFL9014, SiHFL9014 OT-223 2002/95/EC 11-Mar-11 IRFL9014 SiHFL9014-GE3 SiHFL9014-E3 irfl9014trpbf IRFL9014PBF

    SiHFL9014-GE3

    Abstract: IRFL9014 SiHFL9014 SiHFL9014-E3
    Text: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 G D G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFL9014, SiHFL9014 OT-223 2002/95/EC 18-Jul-08 SiHFL9014-GE3 IRFL9014 SiHFL9014-E3