TO-251
Abstract: TO-251 weight TO-251 fairchild TO-251 Package
Text: TO-251 Package Dimensions TO-251 FS PKG Code 39 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.44 A 6.80 6.35 5.54 5.14 2.50 2.10 1.27 0.50 1.52 0.70 1 C 2 0.60 0.40 6.30 5.90 2.28 1.60 3 1.14
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O-251
O-251
O-251,
TO-251
TO-251 weight
TO-251 fairchild
TO-251 Package
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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084DL
Abstract: No abstract text available
Text: TO-251 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE FOR RECTIFIERS ONLY E b2 H1 INCHES A A1 TERM. 1 SEATING PLANE D b1 L1 L 1 MIN MAX MIN MAX 2 J1 e1 NOTES A 0.086 0.094 2.19 2.38 - A1 0.018 0.022 0.46 0.55 3, 4 b 0.028 0.032 0.72 0.81 3, 4 b1 0.033 0.040 0.84
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O-251
O-251
084DL
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA733 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage VCBO= -60V • Complement to KSC945 ABSOLUTE MAXIMUM RATINGS TA =251! C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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KSA733
KSC945
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Untitled
Abstract: No abstract text available
Text: KSMD3P50 / KSMU3P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -2.1A, -500V, RDS on = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD3P50
KSMU3P50
O-252
O-251
-500V,
Abso02
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD1P50 / KSMU1P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.2A, -500V, RDS on = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD1P50
KSMU1P50
O-252
O-251
-500V,
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD6P25 / KSMU6P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -4.7A, -250V, RDS on = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD6P25
KSMU6P25
O-252
O-251
-250V,
30TYP
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Untitled
Abstract: No abstract text available
Text: I R C H November 1988 iL D s e m ic o n d u c t o r Revised November 1999 74A C 251 • 74A C T251 8 -In p u t M u ltip le x e r w ith 3 -S T A T E O u tp u t General Description Features The AC/ACT251 is a high-speed 8-input digital multiplexer. It provides, in one package, the ability to select one bit of
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AC/ACT251
ACT251
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FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
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UF4003.
UF4004.
UF4005.
UF4006.
UF4007.
USB10H.
USB1T1102
USB1T11A.
vKA75420M
W005G
FQPF*7N65C APPLICATIONS
bc548 spice model
bf494 spice model
spice model bf199
LM3171
BC517 spice model
bc547 spice model
BF494 spice
MOC3043-M spice model
SPICE model BC237
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FRP1000
Abstract: FRP1005 FRP1010 FRP1015 FRP1020 FRP2005CC FRP2010CC FRP2015CC FRP2020CC FRP202
Text: ~fl4 DE | 3 4 t i t 7 M 0DS7fl3ô 1 84D 2 7 8 3 8 3469674 FAIRCHILD SEMICONDUCTOR FRP1000/FRP2000CC Series Ultra-fast POWERpIanar Rectifiers 10-20 A, 50-200 V F A IR C H ILD A Schlumberger Company Power And Discrete Division Description _ _ / TO-220AC
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FRP1000/FRP2000CC
O-220AC
T0-220AB
O-220AC
O-22QAB
FRP2005CC
FRP2010CC
FRP2015CC
FRP2020CC
FRP1005
FRP1000
FRP1010
FRP1015
FRP1020
FRP2020CC
FRP202
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IRF350
Abstract: 57113 IRF350-353 IRF3503
Text: FAIRCHILD SEMICONDUCTOR â4 0GE7T1G S IRF350-353 N-channel Pow er MOSFETs, 15 A, 350 V /4 0 0 V £ £ ii£ £ Ü Ü £ A Schlumberger Company _ _ Power And Discrete Division Description These devices are n-channel, enhancement mode, power M OSFETs designed especially for high voltage, high speed
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IRF350-353
T-39-13
IRF350/352
IRF351/353
PC116JOF
IRF350
57113
IRF350-353
IRF3503
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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T0-204AA
T0-204AE
T0-220AB
T0-220AC
Cross Reference power MOSFET
irf 3502 mosfet
SD500KD
irf3203
mosfet irf equivalent book
sem 2106 inverter diagram
IFR822
Diode BYW 56
BUZ41 equivalent
transistor f630
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30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
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-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
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CNY 14-4
Abstract: 0q00 ScansUX1003
Text: 4705/4705B ARITHMETIC LOGIC REGISTER STACK FAIRCHILD C M O S M A C R O LO G IC 1 DESCR IPTIO N — The A rith m e tic Logic Register Stack A LR S is designed to im plem ent accum ulators in high performance m icroprogram m ed digital systems. The device contains
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4705/4705B
CNY 14-4
0q00
ScansUX1003
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Untitled
Abstract: No abstract text available
Text: r* 1 " 7 J nv ' 4705B/4705BX ARITHMETIC LOGIC REGISTER STACK FAIRCHILD CMOS MACROLOGIC D E S C R IP T IO N — T h e A rith m e tic Logic Register Stack A L R S is designed to im plem ent accumulators in high perform ance m icroprogram m ed digital systems. The device contains
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4705B/4705BX
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ac voltage stabilizer circuit diagram
Abstract: ac to AC voltage stabilizer circuit stabiliser circuit diagram design diagram of ac voltage stabilizer ac voltage stabiliser circuit diagram S2209 KA33V ac voltage stabiliser schematic circuit diagram power system stabilizer voltage stabilizer schematic diagram
Text: KA33V VOLTAGE STABILIZER SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VO LTAG E STABILIZER FOR ELECTRONIC TUNER T h e KA33V is a m onolithic integrated voltage stab ilize r e specially designed as voltage supp lier for electronic tuners. FEATURES • Low T e m p era ture C oefficient
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KA33V
KA33V
ac voltage stabilizer circuit diagram
ac to AC voltage stabilizer circuit
stabiliser circuit diagram
design diagram of ac voltage stabilizer
ac voltage stabiliser circuit diagram
S2209
ac voltage stabiliser schematic circuit diagram
power system stabilizer
voltage stabilizer schematic diagram
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FAN8026D
Abstract: KA3026D FAN8026DTF
Text: FAIRCHILD www.fairchildsemi.com FAN8026D KA3026D 4-CH Motor Drive 1C Features Description • • • • • • The FAN8026D is a monolithic integrated circuit, suitable for a 1-ch (forward.reverse) control DC motor driver and a 3-ch motor driver which drives the focus actuator,tracking
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FAN8026D
KA3026D)
FAN8026D
28-SSOPH-375
M34-5V
24ohm
--V02
24ohm
KA3026D
FAN8026DTF
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80c98
Abstract: 88c29 80c95 82C19 74 hc 589 act 4514 DATASHEET lcx 574 81LS97 81LS95 93L38
Text: Revised April 1999 Fairchild’s Logic Functional Cross-Reference Guide FAST FASTr ALS AS LS S TTL ABT Function 00 X X 02 X X 03 04 CROSSVOLT FACT VCX LCX LVX LVT LVQ X X X X ACT FACT QS ACQ X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 06 X X
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FDP39N20
Abstract: No abstract text available
Text: TM FDP39N20 200V N-Channel MOSFET Features Description • 39A, 300V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 38 nC)
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FDP39N20
O-220
FDP39N20
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IC str 1229
Abstract: fairchild 90028 L4W 63
Text: FAIRCHILD SALES REPRESENTATIVES C A LIFO R N IA CELTEC COMPANY 7380 C lairem ont Mesa Blvd., Suite 109 San Diego, C alifornia 92111 Tel: 714-279-7961 TWX: 910 -33 5-15 12 KANSAS B.C. ELECTRONICS 1015 W est Santa Fe Olathe, Kansas 66061 Tel: 913 -78 2-66 96 TWX: 910 -74 9-64 14
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N mosfet 100v 200A
Abstract: FDPF39N20 200v mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP39N20 234AA
Text: UniFET TM FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP39N20
FDPF39N20
FDPF39N20
N mosfet 100v 200A
200v mosfet
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
p channel mosfet 100v
234AA
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cgs resistor
Abstract: AN-7017 smd mosfet MOSFET SMD pp M11 mosfet
Text: www.fairchildsemi.com AN-7017 Reducing Power Losses in MOSFETs by Controlling Gate Parameters Alan Elbanhawy, Fairchild Semiconductor Introduction The gate Equivalent Series Resistance ESR has been recognized as a factor affecting the losses in MOSFETs for a
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AN-7017
AN00007017
cgs resistor
AN-7017
smd mosfet
MOSFET SMD pp
M11 mosfet
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP39N20
FDPF39N20
FDPF39N20
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Untitled
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies SEMICONDUCTOR KBP005M/3N246 - KBP10M/3N252 KBP005M/3N246 g^ggHtyg - KBP10M/3N252 Features • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. 1.5 Ampere Bridge Rectifiers
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KBP005M/3N246
KBP005M/3N246
KBP10M/3N252
12x12
FAIRS00447
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