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    TO-251 FOOTPRINT Search Results

    TO-251 FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1038CIWM Rochester Electronics LLC ADC1038 - ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC TL505 - Analog to Digital Converter Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ML2258 - ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC CA3310A - ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24 Visit Rochester Electronics LLC Buy
    CA3310M Rochester Electronics LLC CA3310 - ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24 Visit Rochester Electronics LLC Buy

    TO-251 FOOTPRINT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    07n60c3

    Abstract: 07N60
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge


    Original     		SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07N60 PDF

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original     		SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2 PDF

    Q67040-S4186

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 P-TO251-3-1 P-TO252 07N60S5 Q67040-S4186 PDF

    infineon 07n60s5

    Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 SPUx3N60S5/SPDx3N60S5 Q67040-S4196 infineon 07n60s5 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 PDF

    SPU07N60S5

    Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4186 07n60s5 infineon 07n60s5 PDF

    Untitled

    Abstract: No abstract text available
    Text: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp TO-252 (DPAK) 35 mΩ 12 A 3 2 1 1 TO-251 (IPAK) 40 V 3 1 • Linear current limitation ■


    Original     		VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 VNB14NV04 VND14NV04-1 O-252 O-251 PDF

    07N60C2

    Abstract: 07N60 P-TO252 SDP06S60 SPD07N60C2 SPU07N60C2 Q67040-S4311 smd transistor code 622
    Text: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07N60C2 07N60 P-TO252 SDP06S60 SPD07N60C2 SPU07N60C2 Q67040-S4311 smd transistor code 622 PDF

    07N60C2

    Abstract: Q67040-S4311 A2206
    Text: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 P-TO252 07N60C2 Q67040-S4311 A2206 PDF

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 PDF

    AR4100

    Abstract: Q67040-S4423
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 AR4100 Q67040-S4423 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 PDF

    07n60c3

    Abstract: 07n60c AR4100
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07n60c AR4100 PDF

    Untitled

    Abstract: No abstract text available
    Text: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp TO-252 (DPAK) 35 mΩ 12 A 3 1 1 2 TO-251 (IPAK) 40 V 3 1 • Linear current limitation


    Original     		VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 VNB14NV04 VND14NV04-1 O-252 O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge R DS(on) 0.6 Ω •=Periodic avalanche rated


    Original     		SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 PDF

    07n60s5

    Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 SPD07N60S5 SPU07N60S5 Q67040-S4186 PDF

    07n60s5

    Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5 PDF

    07N60S5

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252. P-TO251. SPD07N60S5 PDF

    TO252

    Abstract: VNB14NV04 TO-251 footprint VND14NV04-1 VND14NV04 omnifet ii 7393 D2Pak Package dimensions pulse load calculation formula for single pulse TO-252 MOSFET
    Text: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp 1 TO-252 (DPAK) 35 mΩ 12 A 3 2 1 TO-251 (IPAK) 40 V 3 1 SO-8 • Linear current limitation


    Original     		VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 VNB14NV04 VND14NV04-1 O-252 O-251 TO252 VNB14NV04 TO-251 footprint VND14NV04-1 VND14NV04 omnifet ii 7393 D2Pak Package dimensions pulse load calculation formula for single pulse TO-252 MOSFET PDF

    g4iac5

    Abstract: IEEE-472 ac drive schematic
    Text: I/O MODULES G4 DIGITAL AC INPUT DATA SHEET Form 251-010411 Description Opto 22’s G4 AC input modules are used to detect on/off AC voltage levels. Each module provides up to 4,000 Vrms of optical-isolation between field inputs and the logic output of the circuit.


    Original     		limit695-3095 opto22 452-OPTO 474-OPTO 321-OPTO g4iac5 IEEE-472 ac drive schematic PDF

    Untitled

    Abstract: No abstract text available
    Text: MK—253—031 —335—220S METAL AirBorn M L -251 -0 3 1 —335—220S (PLASTIC) Board (Narrow Footprint) to Cable .050" 9 thru 100 Contacts Rugged Board Mount MK, ML MM—223—031—21 3-41 00 (METAL) Rugged Cable MN—221 -0 3 1 -2 1 3 - 4 1 0 0 (PLASTIC)


    OCR Scan     		CTM032 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan     		SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252 PDF

    Q67040-S4423

    Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original     		SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 Q67040-S4423 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3 PDF