MAR 618 transistor
Abstract: No abstract text available
Text: Tape and Reel Information Siliconix H B F ØJ E AA QL G A C K ØK D AA SECTION A-A T QUANTITY PER REEL M DPAK ØN L V ØP 2000 D2PAK 800 PLCC-20 SO-8 SO-14 SO-16 SO-24 WB TO-236 (SOT-23) TO-253 (SOT-143) 1000 2500 2500 2500 1500 2500 W TAPE AND REEL OPTIONS FOR SOICĆ8, SOICĆ14, AND SOICĆ16
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PLCC-20
SO-14
SO-16
SO-24
O-236
OT-23)
O-253
OT-143)
SOIC14,
SOIC16
MAR 618 transistor
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MAR 618 transistor
Abstract: PLCC-20
Text: Tape and Reel Information Siliconix H B F ØJ E AA QL G A C K ØK D AA SECTION A-A T QUANTITY PER REEL M DPAK ØN L V ØP 2000 D2PAK 800 PLCC-20 SO-8 SO-14 SO-16 SO-24 WB TO-236 (SOT-23) TO-253 (SOT-143) 1000 2500 2500 2500 1500 2500 W TAPE AND REEL OPTIONS FOR SOICĆ8, SOICĆ14, AND SOICĆ16
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PLCC-20
SO-14
SO-16
SO-24
O-236
OT-23)
O-253
OT-143)
SOIC14,
SOIC16
MAR 618 transistor
PLCC-20
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IRF252
Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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OCR Scan
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
IRF252
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
IRF452
VN5001A
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Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: [email protected] New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •
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O-220,
O-263,
O-220F,
O247AD,
O-247AC
SiHP21N60EF
SiHB21N60EF
SiHA21N60EF
SiHG21N60EF
SiHG47N60EF
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TO-253 SILICONIX
Abstract: No abstract text available
Text: SÌ6955DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET Vos (V) ^O S(O M } ( f i) lD (A) 0.085 @ V q S = -1 0 V -30 0.19 @ Vos = "4-5 V 2 Si s o Q TSSOP-8 3i O G2 i} It Top View Ô o, Ô d2 P-Channel MOSFET P-Channel MOSFET SYMBOL LIM IT Drain-Source Voltage
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OCR Scan
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6955DQ
S-56944--Rev.
23-Nov-98
TO-253 SILICONIX
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VN66AF equivalent
Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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OCR Scan
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN66AF equivalent
VN67AF equivalent
mospower cross vn66af
VN66AF
2N6658
irf540 equivalent
irf540 TTL
VN67AF
VN88AD
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3SK121Y
Abstract: 3sk121gr BSV81 3N126 SD2150E 40468a mosfet 2N3796 3N125 mosfet 2N3797 MOTOROLA MPF213
Text: MOSFET Item Number Part Number Manufacturer V BR DSS M IDSS Max (A) PD Max (W) rDS (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max (V) Max (F) Max t8) tf Max TOper (8) (OC) Max Package Style N-Channel Dual-Gate Tetrode, (Cont'd) 5 10 3N211 3N212 3N212 MPF211 MPF212
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3N211
3N212
MPF211
MPF212
MPF213
3N213
3N124
3N125
3SK121Y
3sk121gr
BSV81
3N126
SD2150E
40468a
mosfet 2N3796
3N125 mosfet
2N3797 MOTOROLA
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B1115
Abstract: dg507acj
Text: Siliconix DG506A/507A A Member of the TEMIC Group Single 16-Channel/Differential 8-Channel CMOS Analog Multiplexers Features Benefits Applications • • • • • • • • • • • • • • • Low On-Resistanee: 240 £2 TTL and CMOS Logic Compatible
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OCR Scan
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DG506A/507A
16-Channel/Differential
DG506A,
16-channel
DG507A,
DG506A
DG507A
1N4148
P-32167--Rev.
32-Channel
B1115
dg507acj
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DG507AAZ
Abstract: No abstract text available
Text: Siliconix DG506A/507A A Member of theTEMIC Group Single 16-Channel/Differential 8-Channel CMOS Analog Multiplexers Features Benefits Applications • Low On-Resistance: 240 Q • TTL and CMOS Logic Compatible • Easily Interfaced • Communication Systems
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OCR Scan
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DG506A/507A
16-Channel/Differential
P-32167--Rev.
32-Channel
DG507AAZ
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Untitled
Abstract: No abstract text available
Text: SiHG70N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHG70N60EF
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6954DQ Se mi c o nd uc t or s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 30 r DS(on) (Œ) I d (A) 0.065 @ VGS= 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 d2 q TSSOP-8 3i O l! >| G2 Top View N-Channel M OSFET N-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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OCR Scan
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6954DQ
150-Resistance
S-47958--Rev.
15-Apr-96
TSSOP-8/-28
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9407DY Semiconductors P-Channel Enhancement-Mode MOSFET Product Summary VDs V n>S(on) (£2) 0.150 @ VGS = -10 V 0.240 @ Vos = -4.5 V -60 I d (A) ±3.0 ±2.4 sss in SO-8 'n T mi XI X ID S IX S IX s IX H G [T Top View D DD D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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OCR Scan
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9407DY
S-47958--Rev.
15-Apr-96
A254735
S2SM735
0017flin
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HA20
Abstract: No abstract text available
Text: Tem ic siiicoim_ SÌ9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (ß ) 30 I d (A) 0.050 @ Vos = 10 V ±5.0 0.080 @ Vos = 4.5 V ±3.9 u D| SO-8 u D, D2 D2 «j i O Si Ô S2 N -C h an n el M O S F E T N -C h an n el M O S F E T
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OCR Scan
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9936DY
S-42910--
HA20
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6552DQ S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) N-Channel P-Channel I d (A ) rDS(on) (Q ) 20 0.08 @ VGs = 4.5 V ± 2.8 0.11 @ VGs = 2.5 V ± 2.1 0.1 @ VGS = -4 .5 V ± 2.5 0.18 @ V GS = - 2.5 V
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OCR Scan
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6552DQ
S-49534--
06-0ct
06-Oct-97
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DG202BDJ
Abstract: DG201 DG201B DG201BDJ DG202B DG202BDK 202B
Text: S i fie ó n ix DG201B/202B A M ember of the TEMIC Group Improved Quad CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • ± 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—ros oii : 45 Q
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OCR Scan
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DG201B/202B
DG201
DG201B/202B
10kS2
P-32167â
DG202BDJ
DG201B
DG201BDJ
DG202B
DG202BDK
202B
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Ericsson Installation guide for RBS 6000
Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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304X264X130
CL200
TC554001FI-85L
TC554001FTL-70
BMSKTOPAS900
BMSKTOPAS870
10/100TX
13X76
35X100
19X89
Ericsson Installation guide for RBS 6000
ericsson RBS 6000 series INSTALLATION MANUAL
Philips Twin Eye PLN 2032
ERICSSON RBS 6000
Ericsson RBS 6000 hardware manual
ericsson RBS 3206
dil relay 349-383
IGBT semikron 613 GB 123 CT
ericsson RBS 6000 series
Z0765A08PSC
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594D226X06R3B2T
Abstract: 4700B
Text: TYPE 594D Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Terminals, Maximum C/V, Low ESR FEATURES • New extended range offerings. • Conformal construction available in four case codes. B, C and D case codes footprint compatible with EIA molded standard. R case code largest surface mount
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IBJT
Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but
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AN9319
IBJT
SCR Handbook, General electric
AN9319
Rudy Severns
5 hp DC motor speed control using scr
d50026
"General Electric SCR Manual" 6th
AN918 MOTOROLA
14v 10A mosfet
TA84-5
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PDF
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Untitled
Abstract: No abstract text available
Text: TYPE 591D Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Terminals Maximum C/V, Low ESR FEATURES • Low ESR for low profile power applications. • Low profile .047" [1.2mm] height nominal . • Compatible with 293D molded chip mounting pad layout.
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Untitled
Abstract: No abstract text available
Text: TYPE 592D Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Terminals, Maximum C/V FEATURES • New extended range offerings. • New A case size offering. • Low profile .047" [1.2mm] height nominal . • Compatible with 293D molded chip mounting pad layout.
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535BAAC
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1RF540
Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Text: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)
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OCR Scan
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1RF522
O-220AB
RF523
IRF530
IRF630
IRF631
T0-220AB
1RF540
1RF620
1RF640
IRF614
IRF540
RF543
1RF530
LM3661TL-1.25
IRF533
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PDF
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IBJT
Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
Text: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS
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AN9319
IBJT
General Electric SCR Manual 6th edition
AN9319
TA84-5
"General Electric SCR Manual" 6th
Rudy Severns
d50026
AN918 MOTOROLA
Pelly
7402N
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PDF
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transistor bt 808
Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS
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IBJT
Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,
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