TO-261AA PACKAGE Search Results

TO-261AA PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance

TO-261AA PACKAGE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TO-261AA Package		International Rectifier	Case Outline and Dimensions		Original	PDF

TO-261AA PACKAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FL014 Abstract: 314P Text: PD- 95227 IRFL014PbF _Lead-Free 1 IRFL014PbF 2 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXF ET PRODUCT MARKING T HIS IS AN IRF L014 INT ERNAT IONAL RECT IF IER LOGO	Original	IRFL014PbF OT-223 O-261AA) FL014 314P	PDF
FL014 Abstract: TO261AA IRFL014PBF 314P irf sot223 L014 Text: PD- 95227 IRFL014PbF _Lead-Free www.irf.com 1 04/28/04 IRFL014PbF 2 www.irf.com IRFL014PbF www.irf.com 3 IRFL014PbF 4 www.irf.com IRFL014PbF www.irf.com 5 IRFL014PbF 6 www.irf.com IRFL014PbF www.irf.com 7 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)	Original	IRFL014PbF OT-223 O-261AA) FL014 TO261AA IRFL014PBF 314P irf sot223 L014	PDF
fl014 Abstract: 314P TO261AA Text: PD- 95228 IRFL210PbF • Lead-Free www.irf.com 1 04/28/04 IRFL210PbF 2 www.irf.com IRFL210PbF www.irf.com 3 IRFL210PbF 4 www.irf.com IRFL210PbF www.irf.com 5 IRFL210PbF 6 www.irf.com IRFL210PbF www.irf.com 7 IRFL210PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)	Original	IRFL210PbF OT-223 O-261AA) fl014 314P TO261AA	PDF
E1005 Abstract: SOT223 LAND PATTERN MD-SOT223-002-a SOT-223 package outline Text: PACKAGE MECHANICAL INFORMATION SOT-223 Package Outline Dimensions TO-261AA, JEDEC Publication 95 4-Pin Plastic Small Outline Surface Mount 2.85 - 3.10 0.112 - 0.122 4 6.70 - 7.30 (0.264 - 0.287) 1 2 3 2.30 TYP. (0.090) 4.60 TYP. (0.181) 6.30 - 6.70 (0.248 - 0.264)	Original	OT-223 O-261AA, MD-SOT223-002-a TSP0504 E1005 SOT223 LAND PATTERN MD-SOT223-002-a SOT-223 package outline	PDF
Untitled Abstract: No abstract text available Text: Power Packages SOT-223 TO-261AA SMALL OUTLINE TRANSISTOR D E INCHES A D1 A1 E1 c e L 0-10 MAX MIN MAX NOTES A 0.063 0.070 1.60 1.78 - A1 0.0008 0.004 0.02 0.10 - b 0.026 0.033 0.65 0.85 - c 0.010 0.014 0.25 0.35 - D 0.248 0.264 6.30 6.70 D1 0.116 0.124 2.95	Original	OT-223 O-261AA) O-261	PDF
Untitled Abstract: No abstract text available Text: Power Packages SOT-223 TO-261AA SMALL OUTLINE TRANSISTOR D INCHES A D1 E A1 E1 c e L b SYMBOL MIN MAX MIN MAX NOTES A 0.063 0.070 1.60 1.78 - A1 0.0008 0.004 0.02 0.10 - b 0.026 0.033 0.65 0.85 - c 0.010 0.014 0.25 0.35 - D 0.248 0.264 6.30 6.70 D1 0.116	Original	OT-223 O-261AA) O-261 330mm 100mm EIA-481	PDF
Untitled Abstract: No abstract text available Text: FS02.N SENSITIVE GATE SCR On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-261AA SOT-223 FEATURES Glass/passivated die junctions Low current SCR Low thermal resistance High surge current capability	Original	O-261AA OT-223) 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102.	PDF
fl014 Abstract: FL014 Example FL014 datasheet irfl4310 IRFL014 EIA-541 sot-223 code marking marking code 4X 10e1l TO261AA Text: IRFL4310 Package Outline HEXFET SOT-223 TO-261AA Outline E LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN B1 3 - SOURCE 0.10 (.004) M C B M 4 - DRAIN D -B- 3 3 H 0.20 (.008) M C A M -A1 2 A L1 0.10 (.004) M C B M MAX MIN MAX 1.55 1.80 .061 .071 B 0.65 0.85 .026 .033	Original	IRFL4310 OT-223 O-261AA) IRFL014 FL014 fl014 FL014 Example FL014 datasheet irfl4310 IRFL014 EIA-541 sot-223 code marking marking code 4X 10e1l TO261AA	PDF
FL014 Abstract: FL014 Example FL014 equivalent EIA-541 IRFL014 marking code 4X IRFL4310 Text: IRFL4310 Package Outline HEXFET SOT-223 TO-261AA Outline E LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN B1 3 - SOURCE 0.10 (.004) M C B M 4 - DRAIN D -B- 3 3 H 0.20 (.008) M C A M -A1 2 A L1 0.10 (.004) M C B M MAX MIN MAX 1.55 1.80 .061 .071 B 0.65 0.85 .026 .033	Original	IRFL4310 OT-223 O-261AA) IRFL014 FL014 FL014 FL014 Example FL014 equivalent EIA-541 IRFL014 marking code 4X IRFL4310	PDF
TO-261AA Package Abstract: IT 223 SOT223 nu FL014 Text: IRLL014N Package Outline SOT-223 TO-261AA Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP 8 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R	Original	IRLL014N OT-223 O-261AA) TO-261AA Package IT 223 SOT223 nu FL014	PDF
sot-223 body marking D K Q F Abstract: MV7005T1 pd 223 V7005 Text: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for	Original	MV7005T1/D MV7005T1 OT-223 sot-223 body marking D K Q F MV7005T1 pd 223 V7005	PDF
marking 651 sot223 Abstract: No abstract text available Text: ON Semiconductort PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface	Original	PZT651T1 inch/1000 PZT651T3 inch/4000 PZT751= marking 651 sot223	PDF
sot-223 body marking D K Q F Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA	OCR Scan	MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F	PDF
diode MARKING c9 Abstract: MV7005T1 V7005 Text: MV7005T1* CASE 318E-04, STYLE 2 TO-261AA MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating Vr 15 Volts Forward Current if 50 mA Pd 280 28 mW/cC Total Power Dissipation @ T /\ = 25: C Derate above 25-C Junction Temperature Storage Temperature Range Tj	OCR Scan	MV7005T1* 318E-04, O-261AA OT-223 V7005_ MV7005T1, MV7005T3 diode MARKING c9 MV7005T1 V7005	PDF

Untitled Abstract: No abstract text available Text: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value v CEO 300 Vdc Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) v EBO Collector-Em itter Voltage (Open Base) Collector Current (DC)	OCR Scan	PZTA42T1* 318E-04, O-261AA) OT-223	PDF
transistor P2P Abstract: No abstract text available Text: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA M AXIM UM RATINGS Unit Symbol Value Collector-Emitter Voltage v CEO -3 0 0 Vdc Collector-Base Voltage v CBO -3 0 0 Vdc Emitter-Base Voltage Ve b o - 5 .0 Vdc 'C -5 0 0 mAdc Total Power Dissipation up to T ^ = 25 C‘	OCR Scan	PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2P	PDF
Untitled Abstract: No abstract text available Text: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M A XIM U M RATINGS Rating Symbol Value Unit v CEO - 450 Vdc Collector-Base Voltage v CBO - 450 Vdc Emitter-Base Voltage Ve b o -5 .0 Vdc 'C -5 0 0 mAdc Collector-Emitter Voltage Collector Current Total Power Dissipation up to T /\ = 25 C*	OCR Scan	PZTA96T1* 318E-04, O-261AA) OT-223	PDF
Untitled Abstract: No abstract text available Text: PZT2907AT1* M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Symbol Value CASE 318E-04, STYLE 1 TO-261AA Unit v CEO -6 0 Vdc Collector-Base Voltage VCBO -6 0 Vdc Emitter-Base Voltage Ve b O - 5.0 Vdc Collector Current 'c -6 0 0 mAdc Total Power Dissipation, T ^ = 25 ‘C*	OCR Scan	PZT2907AT1*	PDF
tic 223 Abstract: liA SOT23 7S1B-03 Text: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose	OCR Scan	O-236AB) OT-23 318E-04 O-261AA) OT-223 O-116) 7S1B-03 SO-16 O-116 OT-23, tic 223 liA SOT23	PDF
AKD SOT223 Abstract: No abstract text available Text: PZT2222AT1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S R atin g S ym bol V alue C o lle cto r-E m itte r V oltage v CEO 40 Vdc C o lle cto r-B a se V oltage v CB O 75 Vdc E m itter-B ase Voltage (O p en C ollector) v EBO 60 V dc 'C 600 m A dc	OCR Scan	PZT2222AT1* 318E-04, O-261AA) OT-223 PZT2222AT1 AKD SOT223	PDF
Untitled Abstract: No abstract text available Text: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value C o lle c to r - E m itte r V o lta g e ( O p e n B a s e ) v CEO 300 Vdc COLLECTOR C o lle c to r - B a s e V o lta g e ( O p e n E m itte r) VCBO 300 Vdc 24 v EBO 6.0	OCR Scan	PZTA42T1* 318E-04, O-261AA) 111Pij	PDF
Untitled Abstract: No abstract text available Text: PZTA64T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value C o lle c to r - E m itte r V o lta g e VCES - 30 Vdc C o lle c to r - B a s e V o lta g e VCBO -3 0 Vdc ve b o - 10 Vdc 1.5 W a tts - 500 m Adc E m itte r - B a s e V o lta g e	OCR Scan	PZTA64T1* 318E-04, O-261AA) OT-223	PDF
TGAM1 Abstract: SOT-223 AKD AKD SOT223 Text: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value Unit C o lle cto r-E m itte r V oltage v CEO -4 5 0 Vdc C o lle cto r-B a se V oltage VCBO -4 5 0 V dc E m itter-B ase Voltage v EBO - 5.0 V dc 'c - 500 m A dc C o lle cto r C u rre n t	OCR Scan	PZTA96T1* 318E-04, O-261AA) OT-223 TGAM1 SOT-223 AKD AKD SOT223	PDF
transistor P2D Abstract: SOT-223 AKD AKD SOT223 Text: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit v CEO -3 0 0 V dc C o lle cto r-B a se V oltage v CBO -3 0 0 V dc E m itter-B ase V oltage v EBO - 5.0 Vdc 'C -5 0 0 m A dc C o lle cto r-E m itte r Voltage C o lle cto r C urrent	OCR Scan	PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2D SOT-223 AKD AKD SOT223	PDF

TO-261AA PACKAGE Search Results

TO-261AA PACKAGE Result Highlights (5)

TO-261AA PACKAGE Datasheets (1)

TO-261AA PACKAGE Datasheets Context Search

FL014

FL014

fl014

E1005

Untitled

Untitled

Untitled

fl014

FL014

TO-261AA Package

sot-223 body marking D K Q F

marking 651 sot223

sot-223 body marking D K Q F

diode MARKING c9

Untitled

transistor P2P

Untitled

Untitled

tic 223

AKD SOT223

Untitled

Untitled

TGAM1

transistor P2D