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    TO-92 MOSFET Search Results

    TO-92 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    TO-92 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    Untitled

    Abstract: No abstract text available
    Text: VNDN24 N-Channel Enhancement-Mode MOSFETs JBTE55& DEVICE TYPE PACKAGE Single TO-92 TO-226AA • VN2406L Single TO-39 (TO-205AD) • VN2406M Single TO-220 • VN2406D Single SOT-23 • TN2460T Single Chip • Available as VNDN1CHP TYPICAL CHARACTERISTICS


    OCR Scan     		VNDN24 O-226AA) O-205AD) O-220 OT-23 VN2406L VN2406M VN2406D TN2460T JBTE55& PDF

    TO206AC

    Abstract: No abstract text available
    Text: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics


    OCR Scan     		VNDP06 O-206AC) O-226AA) O-237 VN10KE VN0610L, VN2222L VN10KM VNDP06 TO206AC PDF

    Untitled

    Abstract: No abstract text available
    Text: mSg3& VNDQ20 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS107 VN2010L Single Chip • Available as VNDQ5CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics fo r Low Gate Drive Ohmic Region Characteristics VDS (V) VDS (V)


    OCR Scan     		VNDQ20 O-226AA) BS107 VN2010L VNDQ20 PDF

    Untitled

    Abstract: No abstract text available
    Text: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • 2N7000, VN0610LL, VN2222LL Single TO-237 • VN2222LM Single SOT-23 • VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad


    OCR Scan     		VNDS06 2N7000, VN0610LL, VN2222LL VN2222LM VN0605T, 2N7002 VQ1000J VQ1000P O-226AA) PDF

    VND050

    Abstract: vns0300
    Text: li VND050 N-Channel Enhancement-Mode MOSFETs in c o rp o ra te d TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN50300L Single SOT-23 • VN50300T Single Chip • Available as VND01CHP TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive 'd


    OCR Scan     		VND050 VN50300L VN50300T VND01CHP O-226AA) OT-23 VND050 VNS0300L) vns0300 PDF

    IGBT Designers Manual

    Abstract: dc control using ir2110 and mosfet IR2110 application note igbt series bridge ir2110 ir2110 application DATA SHEET OF IGBT IR2110 IR2110 maximum frequency MOSFET designer manual
    Text: Design Tips DT 92-3B Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs & IGBTs Introduction Dynamic Operation Inherently neither the MOSFET nor the IGBT requires negative bias on the gate. Setting the gate voltage to zero at turn-off insures proper


    Original     		92-3B IR2110 IGBT Designers Manual dc control using ir2110 and mosfet IR2110 application note igbt series bridge ir2110 ir2110 application DATA SHEET OF IGBT IR2110 IR2110 maximum frequency MOSFET designer manual PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    Untitled

    Abstract: No abstract text available
    Text: SJV01N60 1A , 600V , RDS ON 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking


    Original     		SJV01N60 13-Sep-2011 PDF

    marking SH SOT23 mosfet

    Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
    Text: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501


    Original     		DMN5501/DMZ5501 200mA DMN5501 DMZ5501 OT-23 74tten marking SH SOT23 mosfet DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5 PDF

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: No abstract text available
    Text: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection


    OCR Scan     		LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89 N-Channel Depletion-Mode MOSFET high voltage PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ . LP07 Supertex inc P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BV p DGS DS ON *D(ON) (max) (min) V GS(th) (max) 1.50 -1-25A -1.0V -16.5V Order Number / Package TO-92 LP0701N3 Features DICE LP0701ND Advanced MOS Technology Ultra low threshold


    OCR Scan     		LP0701ND -1-25A LP0701N3 PDF

    FN7120

    Abstract: 10-PIN EL7515 EL7515IY EL7515IY-T13 EL7515IY-T7 EL7515IYZ EL7515IYZT13 EL7515IYZ-T7
    Text: EL7515 Data Sheet May 13, 2005 High Frequency PWM Step-Up Regulator Features The EL7515 is a high frequency, high efficiency step-up DC:DC regulator operated at fixed frequency PWM mode. With an integrated 1.4A MOSFET, it can deliver up to 600mA output current at up to 92% efficiency. The adjustable


    Original     		EL7515 EL7515 600mA FN7120 10-pin EL7515IY EL7515IY-T13 EL7515IY-T7 EL7515IYZ EL7515IYZT13 EL7515IYZ-T7 PDF

    to-92 mosfet 1A

    Abstract: power mosfet to92
    Text: UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 „ DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UK1398 UK1398 OT-23 UK1398L-AE3-R UK1398G-AE3-R UK1398L-T92-B UK1398G-T92-B UK1398L-T92-K UK1398G-T92-K UK1398L-T92-R to-92 mosfet 1A power mosfet to92 PDF

    VP2410

    Abstract: No abstract text available
    Text: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3


    OCR Scan     		VPDV24 O-226AA) BS208 TP2410L, TP2010L VP2410L VPDV24 VP2410 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology


    OCR Scan     		LP0701 LP0701N3 LP0701LG LP0701ND PDF

    2n7000

    Abstract: mosfet 2N7000 60PF 2N7000 TO-92
    Text: WEITRON Small Signal MOSFET N-Channel 2N7000 3 DRAIN TO-92 Features: *Low On-Resistance : 5 Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V TYE *Fast Switching Speed : 10ns 2 GATE 1. SOURCE 2. GATE 3. DRAIN 1 1 2 3 SOURCE


    Original     		2N7000 270TYP 2n7000 mosfet 2N7000 60PF 2N7000 TO-92 PDF

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
    Text: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.


    OCR Scan     		LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89. N-Channel Depletion-Mode MOSFET high voltage pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt PDF

    mosfet to92

    Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
    Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●


    Original     		TSM2N7000K TSM2N7000KCT mosfet to92 mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 PDF

    vp2020l

    Abstract: IC 6201
    Text: VPDQ20 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • VP2020L, BSS92 Single Chip • Available as VPDQ1CHP DEVICE TYPICAL CHARACTERISTICS 6-198 O u tp u t C h a ra cte ristics O hm ic Region C h a ra c te ris tic s V DS (V) V DS (V)


    OCR Scan     		VPDQ20 O-226AA) VP2020L, BSS92 VPDQ20 125X1 vp2020l IC 6201 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-0049; Rev 0; 10/92 Palm top Com puter and Flash M em ory Power-Supply R egulators The MAX717-MAX721 provide three improvements over prior-art devices. Physical size is reduced - th e high switch­ ing frequencies up to 0.5MHz m ade possible by MOSFET


    OCR Scan     		MAX717-MAX721 AX717-M AX721 PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold


    OCR Scan     		LP0701 LP0701N3 LP0701LG LP0701ND PDF

    Untitled

    Abstract: No abstract text available
    Text: Features LED DRIVER ● ● ● ● ● ● ● ● Buck- Boost LED Driver up to Vout=40V Constant Current Output 350 or 500mA Digital PWM and Analogue Voltage Dimming High Efficiency to 92% EN60950-1 and UL60950-1 Certified EMC Class A Without Extern Components


    Original     		500mA) EN60950-1 UL60950-1 RBD-12 350mA 500mA, 500mA 350mA PDF

    d150n

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    OCR Scan     		LND150 O-243AA* OT-89. d150n PDF