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    SB01

    Abstract: SB05 SB20 SB30 SB40 SB02W03S S09A S02 sanyo
    Text: Schottky Barrier Diodes Shortform Table Lead Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・TP ・SPA ・NP ・MP ・NMP ・TO-126 ・FLP 2 3 4 5 6 7 7 8 9 10 Mar.2008


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    PDF O-126 O-126ML SB30-03Z SB20-05Z SB30W03Z SB01 SB05 SB20 SB30 SB40 SB02W03S S09A S02 sanyo

    TRANSISTOR D882

    Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
    Text: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics


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    PDF C848D3-H BTD882D3 200mA BTB772D3 O-126ML UL94V-0 TRANSISTOR D882 transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882

    C5201 transistor

    Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
    Text: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML


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    PDF C653D3 BTC5201D3 O-126ML UL94V-0 C5201 transistor c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3

    EN3643

    Abstract: 2SA1749
    Text: Ordering number:EN3643 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1749/2SC4564 High-Definition CRT Display Video Output Applications Features Package Dimensions • High fT : fT=400MHz typ . · High breakdown voltage : VCEO≥200V min. · High current.


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    PDF EN3643 2SA1749/2SC4564 400MHz VCEO200V 2SA1749 2SC4564 2SA1749/2SC4564] 2SA1749 O-126ML EN3643

    B1143

    Abstract: transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a
    Text: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features


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    PDF EN2063C 2SB1143/2SD1683 2SB1143 B1143 transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a

    TL 188 TRANSISTOR PNP

    Abstract: HTIP117D
    Text: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed


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    PDF HD200204 HTIP117D O-126ML HTIP117D 183oC 217oC 260oC TL 188 TRANSISTOR PNP

    d1857a

    Abstract: D1857 BTB12 BTD1857AD3
    Text: CYStech Electronics Corp. Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description • High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package


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    PDF C855D3 BTD1857AD3 BTB1236AD3 O-126ML UL94V-0 d1857a D1857 BTB12 BTD1857AD3

    H11-44

    Abstract: No abstract text available
    Text: PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier,Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML Tstg——Storage Temperature………………………… -55~150℃


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    PDF H1144 O-126ML -120V -100V -100V, -100mA -500mA, -50mA H11-44

    hb123d

    Abstract: No abstract text available
    Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB123D █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


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    PDF HB123D O-126ML 300mA 500mA 100mA, hb123d

    Untitled

    Abstract: No abstract text available
    Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML


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    PDF HM13002 O-126ML 500mA 100mA

    transistor 649A

    Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A117AJ-00 芯片厚度:240±20µm 管芯尺寸:1170x1170µm 2 焊位尺寸:B 极 272×192µm 2;E 极 226×298µm 2


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    PDF 100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A

    Untitled

    Abstract: No abstract text available
    Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


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    PDF H2682 O-126ML 10AIC

    transistor 772

    Abstract: 772 transistor H772 2SB772HS772H772 H*772 2SB772 HS772
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 772 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A100AJ-00 芯片厚度:240±20µm 管芯尺寸:1000x1000µm 2 焊位尺寸:B 极 215×215µm 2;E 极 210×210µm 2


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    PDF 100mm A100AJ-00 2SB772HS772H772 O-126TO-126ML -10VIE transistor 772 772 transistor H772 2SB772HS772H772 H*772 2SB772 HS772

    B1143

    Abstract: transistor D1683 2SD 1143 2SB1143S
    Text: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes


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    PDF EN2063C 2SB1143/2SD1683 O-126ML 2SB1143 B1143 transistor D1683 2SD 1143 2SB1143S

    2SA1536

    Abstract: 2SC3951 ITR03875 ITR03876
    Text: Ordering number:ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High definition CRT display video output, wide-band amplifier. unit:mm 2042B [2SA1536/2SC3951]


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    PDF ENN2435B 2SA1536/2SC3951 2042B 2SA1536/2SC3951] 600MHz. 70Vmin. 2SA1536 2SA1536 2SC3951 ITR03875 ITR03876

    2SK3449

    Abstract: No abstract text available
    Text: Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2190 [2SK3449] 8.0 3.3 1.5 7.5 3.0 11.0 1.4 4.0 1.0


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    PDF ENN6672 2SK3449 2SK3449] O-126ML 2SK3449

    IC 7667

    Abstract: 2SC5951
    Text: Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2042B [2SC5951] 8.0 4.0 1.0


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    PDF ENN7667 2SC5951 2042B 2SC5951] O-126ML IC 7667 2SC5951

    lb123d

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter


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    PDF LB123D O-126ML lb123d

    2042A

    Abstract: 2SA1537
    Text: Ordering number:EN2436B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High-definition CRT display video output, wide-band amplifier. unit:mm 2042A [2SA1537/2SC3952]


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    PDF EN2436B 2SA1537/2SC3952 2SA1537/2SC3952] 700MHz. 70Vmin. 2SA1537 O-126ML 2042A 2SA1537

    c3807

    Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
    Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4


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    PDF K2270 A1765 A1497/C3860, A1503/C3864 A1509/C3899, A1511/C3901 A1572/ A1574/C4070 A1582/C4113, A1590/C4121 c3807 C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986

    TO-126LP

    Abstract: No abstract text available
    Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle


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    2SA1833

    Abstract: 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777
    Text: 50 O V 2 5 U 2SA1770 Vc b o VcEO V (V) HV SW -180 !C C D C ) (A) *EPfàTc=25t;) Pc Pc* (W) (W) -160 -1.5 1 M ICBO (max) (*A) VcB (V) -1 -120 M (min) 1i ft (max) Vc e (V) 100 400 -5 (Ta=25°C) Ic / I e (A) [*EPÍátyp (max) (V) (V) ic (A) -0.1 -0.5 -1.2


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    PDF 2SA1770 2SA1772 2SA1773 2SA1775 2SA1776 2SA1777 O-126MOD) 2SA1810 2SA1812 2SA1813 2SA1833 2SA1842 2SC4614 2SA1770 2SA1812 2SA1772 2SA1773 2SA1777

    Untitled

    Abstract: No abstract text available
    Text: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the


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    SC3416

    Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
    Text: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.


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    PDF Ratinfs/Ta-25 Characteristics/Ta-25t: 2SC2857 2SA1689/2SC4449 2SC5291 L26Stt Sfr-32) O-126LP, O-126 12ClP SC3416 tt2202 2SA1371 2SC3790 2SC4732 2SA1829 2SC4075 TD-220F