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    TO218 PACKAGE Search Results

    TO218 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO218 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-218 Package Intersil SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE Original PDF

    TO218 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6073B

    Abstract: PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA
    Text: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .


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    5900PB O218/TO247 ISOWATT220 6296B, 6298B, 6299B, 6300B SVT030AC FCH020WT 6073B PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA PDF

    6073b

    Abstract: TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1
    Text: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .


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    5900PB O218/TO247 ISOWATT220 6296B, 6298B, 6299B, 6300B SVB030WT 6073b TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1 PDF

    FCH020WT

    Abstract: TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231
    Text: HEATSINKS & MOUNTINGS TO218 & TO247 package HEATSINKS continued EAV series SFV041ST Compact, high power dissipation, vertical mounting extruded heatsinks with solderable fixing pins. Designed to accommodate a single TO218/TO247 package. Option of screw or clip mount with a choice of


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    SFV041ST O218/TO247 EAV025HC EAV031HC EAV038HC EAV050HC EAV063HC EAV025CL EAV031CL EAV038CL FCH020WT TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231 PDF

    NTE56031

    Abstract: NTE56030 triac 600V 100A
    Text: NTE56030 & NTE56031 TRIAC, 40 Amp TO218 Isolated Tab Description: The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Applications: D Phase Control D Static Switching


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    NTE56030 NTE56031 NTE56030 NTE56031 triac 600V 100A PDF

    DIN 6784

    Abstract: P-TO218-AA P-DSO-8-6 SMD transistor 2x sot 23 GPT09050 GPT09051 GPT09244 P-TO251-3-1 GPT05155 GPT05156
    Text: Gehäusemaßbilder Package Outlines Gehäusemaßbilder Package Outlines Maße in mm, wenn nicht anders angegeben (Dimensions in mm, unless otherwise specified) P-DSO-8-6/-7 Gewicht etwa 0.15 g Approx. weight 0.15 g 4 1 Bild 16 Figure 16 P-TO218-AA (P-TO218-2-1)


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    P-TO218-AA P-TO218-2-1) GPT05156 GPT05158 O-92-E6288 GPT05548 DIN 6784 P-TO218-AA P-DSO-8-6 SMD transistor 2x sot 23 GPT09050 GPT09051 GPT09244 P-TO251-3-1 GPT05155 GPT05156 PDF

    NTE6090

    Abstract: TO218 package TO3P package
    Text: NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp, TO218/TO3P Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range


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    NTE6090 O218/TO3P NTE6090 O3P/TO218 TO218 package TO3P package PDF

    NTE2317

    Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor PDF

    NTE390

    Abstract: NTE391
    Text: NTE390 NPN & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.


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    NTE390 NTE391 500mA, NTE390 NTE391 PDF

    darlington NPN 600V 8a transistor

    Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
    Text: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output


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    NTE256 NTE256 darlington NPN 600V 8a transistor npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V PDF

    NTE392

    Abstract: NTE393
    Text: NTE392 NPN & NTE393 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.


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    NTE392 NTE393 NTE392 NTE393 PDF

    NTE392

    Abstract: NTE393
    Text: NTE392 NPN & NTE393 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.


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    NTE392 NTE393 NTE392 NTE393 PDF

    ML97

    Abstract: No abstract text available
    Text: Part Number: ML97/50WPINS Extruded heat sink with large radial fins and solderable pins. For use with TO220 packages. For use with TO-220/TO218 packages. Order this part through an Authorized Distributor www.aavidthermalloy.com/sales/disty.shtml Product Information


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    ML97/50WPINS O-220/TO218 ML97 PDF

    automotive ignition

    Abstract: NTE2316 105w vce 500v NPN Transistor
    Text: NTE2316 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls.


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    NTE2316 NTE2317 140mA, automotive ignition NTE2316 105w vce 500v NPN Transistor PDF

    NPN Transistor 1.5A 700V

    Abstract: No abstract text available
    Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection


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    NTE2318 NTE2318 NPN Transistor 1.5A 700V PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ML97/38WPINS Extruded heat sink with large radial fins and solderable pins. For use with TO220 packages. For use with TO-220/TO218 packages. Order this part through an Authorized Distributor www.aavidthermalloy.com/sales/disty.shtml Product Information


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    ML97/38WPINS O-220/TO218 PDF

    NPN Transistor VCEO 1000V

    Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
    Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:


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    NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A PDF

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


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    NTE270 NTE271 NTE270 PDF

    BUV48A

    Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification


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    APM-PWR/07/2362 APM-PWR/07/2362 BUV48A TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    NTE2317 NTE2317 PDF

    nte2317

    Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    NTE2317 NTE2317 150mA automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor PDF

    Heatsinks TO247

    Abstract: TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R
    Text: HEATSINKS & MOUNTINGS HEATSINKS SOT32/TO126 package TO218 & TO247 package Also covers DOP3 I , ISOWATT218, SOD93, SOT93, and TOP3(I) SVB030WT 30 max. 12.7 Twisted vane heatsink with integral fixing tags and a slotted hole designed to accommodate a single SOT32/TO126 package.


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    OT32/TO126 ISOWATT218, SVB030WT O218/TO247 EAB025NH EAC025HC EAC038HC EAC050HC Heatsinks TO247 TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R PDF

    NTE2305

    Abstract: No abstract text available
    Text: NTE2305 NPN & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.


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    NTE2305 NTE2306 NTE2305 PDF

    NTE394

    Abstract: No abstract text available
    Text: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


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    NTE394 NTE394 100mA, PDF

    NTE2301

    Abstract: No abstract text available
    Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction


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    NTE2301 NTE2301 PDF