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    TO220 RF POWER TRANSISTOR NPN Search Results

    TO220 RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO220 RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    27mhz rf amplifier NPN transistor to220

    Abstract: TO220 RF POWER TRANSISTOR NPN NTE235
    Text: NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE235 NTE235 500mA 100mA 27MHz 27mhz rf amplifier NPN transistor to220 TO220 RF POWER TRANSISTOR NPN

    27mhz rf amplifier NPN transistor to220

    Abstract: 2SC1306 TO220 RF POWER TRANSISTOR NPN 27mhz rf amplifier citizen mhz 3a npn to220 transistor hFE is transistor to220 RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 27mhz transistor
    Text: 2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. B C E WINTransceiver Absolute Maximum Ratings: TC = +25°C unless otherwise specified


    Original     		PDF 2SC1306 2SC1306 27MHz 27mhz rf amplifier NPN transistor to220 TO220 RF POWER TRANSISTOR NPN 27mhz rf amplifier citizen mhz 3a npn to220 transistor hFE is transistor to220 RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 27mhz transistor

    Untitled

    Abstract: No abstract text available
    Text: Advanced Monolithic Systems AMS232 NPN SILICON HIGH FREQUENCY TRANSISTOR RoHS compliant FEATURES APPLICATIONS • High Collector-Emitter Breakdown • High Frequency of 1.2GHz at 50mA • Available in TO-220 Package 120V Min. • High density Television • Computer Monitors


    Original     		PDF AMS232 O-220 AMS232 O-220)

    IC 556 DATASHEET

    Abstract: AMS232 AMS264
    Text: Advanced Monolithic Systems AMS232 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • High Collector-Emitter Breakdown • High Frequency of 1.2GHz at 50mA • Available in TO-220 Package APPLICATIONS 120V Min. • High density Television • Computer Monitors


    Original     		PDF AMS232 O-220 AMS232 AMS264. INFORMAT925) O-220) 6680B IC 556 DATASHEET AMS264

    Monolithic System Technology

    Abstract: AMS232 AMS264
    Text: Advanced Monolithic Systems AMS232 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • High Collector-Emitter Breakdown • High Frequency of 1.2GHz at 50mA • Available in TO-220 Package APPLICATIONS 120V Min. • High density Television • Computer Monitors


    Original     		PDF AMS232 O-220 AMS232 AMS264. O-220) Monolithic System Technology AMS264

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


    Original     		PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165

    MRF264

    Abstract: TO220 RF POWER TRANSISTOR NPN vhf amplifier "to-220"
    Text: MRF264 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI MRF264 is Designed for Class C VHF Mobile Radio Power Amplifier Applications Operating at 12.5 Volts. PACKAGE STYLE TO-220 FEATURES: • POUT = 30 W Min. @ 175 MHz • Gold Metalization • Economical TO-220 CE Package


    Original     		PDF MRF264 MRF264 O-220 O-220 ICBO150 TO220 RF POWER TRANSISTOR NPN vhf amplifier "to-220"

    TRANSISTOR SMD catalog

    Abstract: Transistor 2SA 2SB 2SC 2SD AG SMD TRANSISTOR catalog mosfet Transistor smd Schottky diode TO220 TRANSISTOR regulator ssf transistor SMD smd transistor EK transistor smd sG SANKEN POWER TRANSISTOR
    Text: GENERAL INFORMATION SANKEN PRODUCT PREFIXES Prefix Description Info Prefix Description AG Axial-lead ultra-fast recovery rectifier ❊❏ FMS Full mold high-speed rectifier AK Axial-lead Schottky barrier diode ❊❏ FMU Full mold TO-220/TO-3P fast-recovery rectifier


    Original     		PDF C01EA0 D01EB0 D03EB0 I01EC0 I02EA0 L01EA0 O01EC0 T01EC0 TRANSISTOR SMD catalog Transistor 2SA 2SB 2SC 2SD AG SMD TRANSISTOR catalog mosfet Transistor smd Schottky diode TO220 TRANSISTOR regulator ssf transistor SMD smd transistor EK transistor smd sG SANKEN POWER TRANSISTOR

    IC 556 DATASHEET

    Abstract: pdf for ic 556 ic 556 ic 556 specifications AMS232 AMS264
    Text: Advanced Monolithic Systems AMS264 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • High Collector-Emitter Breakdown • High Frequency of 1.2GHz at 50mA • Available in TO-220 Package APPLICATIONS 120V Min. • High density Television • Computer Monitors


    Original     		PDF AMS264 O-220 AMS264 AMS232. INFORMAT925) O-220) 6680B IC 556 DATASHEET pdf for ic 556 ic 556 ic 556 specifications AMS232

    MRF260

    Abstract: vhf amplifier "to-220"
    Text: MRF260 SILICON NPN RF POWER TRANSISTOR PACKAGE STYLE TO-220 DESCRIPTION: The ASI MRF260 is Designed for VHF Large Signal Power Amplifier Applications. MAXIMUM RATINGS IC 1.0 A CONT VCE 18 V PDISS 12 W @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +150 C θJC


    Original     		PDF MRF260 O-220 MRF260 vhf amplifier "to-220"

    AMS232

    Abstract: AMS264
    Text: Advanced Monolithic Systems AMS264 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • High Collector-Emitter Breakdown • High Frequency of 1.2GHz at 50mA • Available in TO-220 Package APPLICATIONS 120V Min. • High density Television • Computer Monitors


    Original     		PDF AMS264 O-220 AMS264 AMS232. O-220) AMS232

    bc 617 transistor equivalent

    Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
    Text: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP


    Original     		PDF FMMT617 FMMT717 FMMT717, 160mV 100mA FMMT717 bc 617 transistor equivalent FMMT-617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT720

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    2SC1971

    Abstract: RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1971 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions i 0 3.6 ± 0.2 9.1 ± 0.7


    OCR Scan     		PDF 2SC1971 2SC1971 175MHz O-220 175MHz. 175MHz 175MH2 RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor

    2SC2166

    Abstract: 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. • • • • 03.6 9.1 ± 0 .7


    OCR Scan     		PDF 2SC2166 2SC2166 27MHz O-220 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent

    2sc1969

    Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm


    OCR Scan     		PDF 2SC1969 2SC1969 27MHz O-220 27MHz. 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance

    2SC1972

    Abstract: transistor 2sc1972 2SC1972 equivalent RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR TY P E DESCRIPTION O U TLIN E DRAW ING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7 03.6 Dimensions in mm


    OCR Scan     		PDF 2SC1972 175MHz O-220 175MHz. 175MHz 2SC1972 transistor 2sc1972 2SC1972 equivalent RF POWER TRANSISTOR NPN vhf

    2SC1969

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'


    OCR Scan     		PDF 2SC1969 2SC1969 27MHz O-220 27MHz. 150mA

    transistor 2sc1972

    Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2


    OCR Scan     		PDF 2SC1972 2SC1972 175MHz O-220 175MHz. transistor 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf

    TIP48

    Abstract: TIP49 TIP47 TIP50
    Text: e IßANSYS TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS aiCTRomcs LIMITED TO-220 PACKAGE TOP VIEW • 40 W at 25°C Case Temperature • 1 A Continuous Collector Current • 2 A Peak Collector Current o B C C C E C • 20 mJ Reverse-Energy Rating


    OCR Scan     		PDF TIP47, TIP48, TIP49, TIP50 O-22C) TIP47 TIP48 TIP49 TIP48 TIP47 TIP50

    2SC1945

    Abstract: 2SC1945 Transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2


    OCR Scan     		PDF 2SC1945 2SC1945 27MHz O-220 27MHz. 2SC1945 Transistor

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage


    OCR Scan     		PDF MMBR5179 OT-23

    C * K SWITCH 8121

    Abstract: No abstract text available
    Text: 5V, 1A Low Dropout Linear Regulator with RESET and ENABLE Description The CS-8121 is a 5V precision linear reg­ ulator with two microprocessor compat­ ible control functions and protection cir­ cuitry included on chip. The composite NPN-PNP output pass transistor


    OCR Scan     		PDF CS-8121 250jaA. The-220 CS-8121T5 CS-8121TV5 CS-8121TH5 TP-22Q Q-200 20b7SSb C * K SWITCH 8121