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    TO220AB IGBT 1200V Search Results

    TO220AB IGBT 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TO220AB IGBT 1200V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S PDF

    GA400GD25S

    Abstract: ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137
    Text: +200 / -460 mA 12.5 - 25V 12.5 - 25V with with UnderUnderVoltage Voltage Lockout Lockout UP TO 1200V — IR2233 / 2235 10 - 25V 10 - 25V with with +200 / -420 UVLO UVLO mA 12 - 25V 12 - 25V with with UVLO UVLO Output Swing = Supply Voltage Output Swing = Supply


    Original     		IR2108 IRFBA1404P IRF1404S IRF1404 IRF1404L IRF1405S IRF1405 IRF1405L IRFP2907 IRFPS3810 GA400GD25S ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137 PDF

    tc122 25

    Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060


    Original     		1MBG05D-060 1MBC05-060 1MBC05D-060 1MBH05D-060 1MBG10D-060 1MBC10-060 1MBC10D-060 1MBH10D-060 1MBC15-060 1MB15D-060 tc122 25 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060 PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF

    G11N120CN

    Abstract: No abstract text available
    Text: HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS S em iconductor A p rii 1999 D ata S h eet 43A, 1200V, NPT Series N-Channel IGBT 43A, 1200V, T C = 25°C The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor


    OCR Scan     		HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS GTG11N120CN, TP11N120CN, HGT1S11N120CNS O-263AB G11N120CN PDF

    K8120P3

    Abstract: FAIRCHILD to220ab package K8120P K-8120 Diode 1200V 8A
    Text: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current


    Original     		ISL9K8120P3 ISL9K8120P3 O-220 K8120P3 K8120P3 FAIRCHILD to220ab package K8120P K-8120 Diode 1200V 8A PDF

    HGTG30N60A4

    Abstract: HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S
    Text: IGBT Selection Guide TM 600V FAMILIES NOTE 1 IC RATED OR IC AT 110oC 3A TO-252AA (D-PAK) TO-220AB TO-263AB (D2-PAK) HGTD3N60A4S 2.7V 100ns HGTP3N60A4 2.7V 100ns HGT1S3N60A4S 2.7V 100ns HGTD3N60B3S 2.1V 175ns HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns


    Original     		110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG30N60A4 HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S PDF

    10N120BN

    Abstract: No abstract text available
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTD1N120CNS, HGTP1N120CN S e m iconductor M arch 1999 D ata S h eet 6.2A, 1200V, NPT Series N-Channel IGBT F ile N u m b er 4652.1 Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    OCR Scan     		HGTD1N120CNS, HGTP1N120CN HGTP1N120CN O-220AB PDF

    A3020

    Abstract: No abstract text available
    Text: PD - 94385 IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		IRGB5B120KD O-220 O-220AB A3020 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP5N120BN, HGT1S5N120BNS D ata S h eet Jan u ary 1999 21 A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and


    OCR Scan     		HGTP5N120BN, HGT1S5N120BNS HGTP5N120BN HGT1S5N120BNS O-263AB O-263AB PDF

    EM- 546 motor

    Abstract: No abstract text available
    Text: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    OCR Scan     		HGTD1N120BNS, HGTP1N120BN HGTD1N120BNS HGTP1N120BN O-252AA T0-252AA EM- 546 motor PDF

    5A IGBT

    Abstract: 1MB03D-120 1MBC03-120 IC100 1MB03
    Text: 1MBC03-120,1MB03D-120, Molded IGBT 1200V / 3A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications


    Original     		1MBC03-120 1MB03D-120, 5A IGBT 1MB03D-120 IC100 1MB03 PDF

    RURP8120CC

    Abstract: No abstract text available
    Text: RURP8120CC Data Sheet January 2000 File Number 4792 8A, 1200V Ultrafast Dual Diode Features The RURP8120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.


    Original     		RURP8120CC RURP8120CC 100ns) 100ns PDF

    RHR8120C

    Abstract: RHRP8120CC TA49096
    Text: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated


    Original     		RHRP8120CC RHRP8120CC RHR8120C TA49096 PDF

    TA49036

    Abstract: RURP4120CC
    Text: RURP4120CC Data Sheet January 2000 File Number 4050.1 4A, 1200V Ultrafast Dual Diode Features The RURP4120CC is an ultrafast dual diode with soft recovery characteristics trr < 70ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted


    Original     		RURP4120CC RURP4120CC TA49036 PDF

    2N120CN

    Abstract: HGT1S2N120CNS HGT1S2N120CNS9A HGTD2N120CNS HGTP2N120CN TB334
    Text: HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS HGT1S2N120CNS 2N120CN HGT1S2N120CNS9A HGTD2N120CNS HGTP2N120CN TB334 PDF

    10N120BN

    Abstract: G10N120BN 35A, 1200V, NPT Series N-Channel IGBT spice model TA49290 HGTG10N120BN HGTP10N120BN TB334 HGT1S10N120BNS HGT1S10N120BNS9A 10n120
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120BN 35A, 1200V, NPT Series N-Channel IGBT spice model TA49290 HGTG10N120BN TB334 HGT1S10N120BNS9A 10n120 PDF

    10N120BN

    Abstract: G10N120BN 10N120 TA49290 HGT1S10N120BNS HGT1S10N120BNS9A HGTG10N120BN HGTP10N120BN TB334 T0263AB
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120BN 10N120 TA49290 HGT1S10N120BNS9A HGTG10N120BN TB334 T0263AB PDF

    HGTG11N120CN

    Abstract: g11n120cn 11n120 11N120CN TA49291 g11n120 HGT1S11N120CNS HGT1S11N120CNS9A HGTP11N120CN TB334
    Text: HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS HGT1S11N120CNS HGTG11N120CN g11n120cn 11n120 11N120CN TA49291 g11n120 HGT1S11N120CNS9A HGTP11N120CN TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


    Original     		IGP01N120H2 IGD01N120H2 PG-TO-252-3-1 O-252AA) PG-TO-220-3-1 O-220AB) IGD01N120H2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Semiconductor D ata S h eet A p rii 1999 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS HGT1S2N120BNS 1-800-4-HARRIS PDF