IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
PDF
|
PSMN015-60PS
Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
Text: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4
|
Original
|
OT404)
PHB66NQ03LT
OT428)
PHD38N02LT
PH2520U
OT163
PSMN015-60PS
BUK9507-30B
Power MOSFET Selection Guide
BSS123 NXP
BSH103
BSS84 / BSH201
2N7002CK
BSH108
BUK7535-55A
PMN38EN
|
PDF
|
2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
|
Original
|
D18597EJ1V0SG
2SC5664
2sc5292
NPN transistor SST 117
D1859
2sK4075 TRANSISTOR
2sc945
2SK4075
PC78L05J
2SK3918
2sk3326
|
PDF
|
AUIRFIZ44N
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRFIZ44N Features l l l l l l l l l PD - 97767 HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated
|
Original
|
AUIRFIZ44N
AUIRFIZ44N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated
|
Original
|
AUIRFIZ44N
|
PDF
|
IRF3205 application
Abstract: irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
Text: AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature
|
Original
|
AUIRFI3205
IRF3205 application
irf3205 DRIVER
Mosfet IRF3205
IRF3205 IR
|
PDF
|
IRF3205 application
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature
|
Original
|
AUIRFI3205
IRF3205 application
|
PDF
|
*rfz34n
Abstract: AUIRFIZ34N
Text: AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated
|
Original
|
AUIRFIZ34N
*rfz34n
AUIRFIZ34N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated
|
Original
|
AUIRFIZ34N
|
PDF
|
IRFB16N50KPBF
Abstract: No abstract text available
Text: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free l l l l l VDSS RDS(on) typ. 285m: 500V ID 17A
|
Original
|
IRFB16N50KPbF
O-220AB
O-220AB
IRFB16N50KPBF
|
PDF
|
TRIAC BCR 16 km
Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)
|
Original
|
R07CS0003EJ0200
TRIAC BCR 16 km
PJ 1199 diode
TRIAC BCR 12 km
catalog transistor
TO-220-AR
RENESAS marking code package triac sot 89
TRIAC BCR 10 AM
pj 999 diode
TO-92-AB
110N04
|
PDF
|
IRFB16N50K
Abstract: No abstract text available
Text: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
|
Original
|
IRFB16N50K
O-220AB
O-220AB
IRFB16N50K
|
PDF
|
22mH 400v inductor
Abstract: IRFB16N50K TO-220aB DIODE 11A
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
|
Original
|
5855A
IRFB16N50K
O-220AB
O-220AB
22mH 400v inductor
IRFB16N50K
TO-220aB DIODE 11A
|
PDF
|
22mH 400v inductor
Abstract: IRFB16N50K
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive
|
Original
|
5855A
IRFB16N50K
O-220AB
12-Mar-07
22mH 400v inductor
IRFB16N50K
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive
|
Original
|
5855A
IRFB16N50K
O-220AB
08-Mar-07
|
PDF
|
rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
|
Original
|
|
PDF
|
IRF1205
Abstract: irf120
Text: PD - 93803 IRF1205 PROVISIONAL HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temprature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.027Ω G Description ID = 41A
S Fifth Generation MOSFETs from International Rectifier
|
Original
|
IRF1205
O-220
IRF1205
irf120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A
|
Original
|
IRFB16N50KPbF
O-220AB
12-Mar-07
|
PDF
|
2SK2522-01
Abstract: No abstract text available
Text: K /\° 7 - MOSFET / Power MOSFETs • M 7 -M O S F E T F-l y ' J - X < 7 m sc Power MOSFET F-l series High sp eed switching Id Id pulse 2SK2753-01 2SK947-MR 2SK900 2SK901 2SK1549-R 2SK902 2SK949-MR 2SK950 2SK724 *2 Amps. Amps. 50 45 180 0.03 ±20 3.0 TO-3P
|
OCR Scan
|
2SK905
2SK2494-01
2SK906
2SK2000-R
2SK2753-01
2SK947-MR
2SK900
2SK901
2SK1549-R
2SK902
2SK2522-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple
|
OCR Scan
|
PD-91885A
IRFBC40A
|
PDF
|
F1S45N06
Abstract: MOSFET S1A M n10 ece
Text: ÎS 3 H A R U Ü S i “ ' " R " RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM I S " T" 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC STYLE TO-247 • 45A , 60V SOURCE • rDS ON = 0 -02 8 U • Temperature Compensating PSPICE Model
|
OCR Scan
|
RFG45N06,
RFP45N06,
RF1S45N06,
RF1S45N06SM
O-247
2E-13
86E-3
26E-3
90E-6
07E-9
F1S45N06
MOSFET S1A
M n10 ece
|
PDF
|
2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
|
OCR Scan
|
O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
|
PDF
|
2sj177
Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
|
OCR Scan
|
0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2sj177
2sk1778
2SK97-2
2sk1301
2sj175
|
PDF
|
UFN530
Abstract: UFN533 UFN530 POWER MOSFET UFN532 60N100 S-075
Text: POWER MOSFET TRANSISTORS UFN530 UFN532 UFN533 100 Volt, 0 .1 8 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
|
OCR Scan
|
UFN530
UFN532
UFN533
30NV1SIS3H
UFN530
UFN531
UFN532
UFN533
UFN530 POWER MOSFET
60N100
S-075
|
PDF
|
