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    TO220F Price and Stock

    Nextgen Components TO220FMD10N65F

    MOSFET TO-220F N 650V 10A
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    DigiKey TO220FMD10N65F Tube 1,000
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    Nextgen Components TO220FMDD4N65F

    MOSFET TO-220F N 650V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO220FMDD4N65F Tube 1,000
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    Nextgen Components TO220FMDD7N65F

    MOSFET TO-220F N 650V 7A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO220FMDD7N65F Tube 1,000
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    Nextgen Components TO220FMD12N65F

    MOSFET TO-220F N 650V 12A
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    DigiKey TO220FMD12N65F Tube 1,000
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    ROHM Semiconductor BA05CC0T

    LDO Voltage Regulators IC LDO 1A 5V
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    TTI BA05CC0T Bulk 12,400 100
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    Find more TO220F price and stock on Findchips.com

    TO220F Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-220F Fairchild Semiconductor Discrete Products Original PDF
    TO-220F NXP Semiconductors AN11172 - Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Original PDF
    TO220FH STMicroelectronics TO220FH Original PDF
    TO-220FP Central Semiconductor 8&16 Amp Schottky Rectifiers Original PDF
    TO-220FP Continental Device India Thru-hole Fully Isolated Plastic Package Original PDF
    TO-220FP Continental Device India NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Original PDF
    TO-220FP Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    TO220FP Unknown Original PDF
    TO-220FP STMicroelectronics TRANSISTOR OUTLINE PACKAGE Original PDF
    TO220FP-5 Unknown Original PDF
    TO220FP-5V5 Unknown Original PDF
    TO-220 FULLPAK Package International Rectifier Case Outline and Dimensions Original PDF

    TO220F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PSMN4

    Abstract: No abstract text available
    Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,


    Original     		PSMN4R6-100XS O220F OT186A) PSMN4 PDF

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS TO220F 4Pin Straight Type 10.0±0.3 4.5±0.3 6.5±0.3 2.8±0.3 2.8±0.3 2.4 25.0M IN 9.5±0.3 Ø3.2±0.1 2.55±0.3 0.9 10.7±0.3 1.5 0.65±0.1 1 2 3 2.54 2.54 2.54 4 0.5±0.1 UNIT : mm Ver.2003-08-29


    Original     		O220F PDF

    Untitled

    Abstract: No abstract text available
    Text: KA5M0280R S P S P S TO220F-4L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under


    Original     		KA5M0280R O220F-4L PDF

    Untitled

    Abstract: No abstract text available
    Text: パッケージ外形図 TO220F 3Pin 2.8±0.3 4.7±0.3 2.8±0.3 6.5±0.3 10.1±0.3 4.8±0.3 9.5±0.3 Ø 3.2±0.1 1.3 2.55±0.3 12.5M IN 1.7 +0.12 0.65 -0.10 2.54 2.54 +0.15 0.7 -0.10 単位 : mm


    Original     		O220F PDF

    SI-3002KWF

    Abstract: SI-3003KWF
    Text: 1-1-3 Multi-Output Type Regulator ICs SI-3000KWF Series 2-Output, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220F (Ta=25°C) Ratings Parameter DC Input Voltage • Output current: 1.0A x 2


    Original     		SI-3000KWF O220F) SI-3002KWF/SI-3003KWF SI-3002KWF SI-3003KWF PDF

    Untitled

    Abstract: No abstract text available
    Text: BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A TO220F full pack plastic package.


    Original     		BUJD203AX OT186A O220F) PDF

    P9NB60

    Abstract: P9NB60FP
    Text: STP9NB60 STP9NB60FP  N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		STP9NB60 STP9NB60FP O-220/TO220FP P9NB60 P9NB60FP P9NB60FP PDF

    AOTF409

    Abstract: AOTF409L
    Text: AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high


    Original     		AOTF409 AOTF409/L O220FL AOTF409 AOTF409L O-220FL PDF

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F PSMN5R6-100XS N-channel 100V 5.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 2 — 26 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.


    Original     		PSMN5R6-100XS O220F OT186A) PDF

    c05 10 48 diode

    Abstract: FME-230A
    Text: 100V, 30A Schottky barrier diode in TO220F package FME-230A •Absolute maximum ratings Parameter Ratings Unit ■Electrical characteristics Conditions Parameter Ratings Unit Ta = 25°C Conditions VRM 100 V VF 0.85 V IF =15A IF(AV) 30 A IR 1.5max mA VR =VRM


    Original     		O220F FME-230A 150max c05 10 48 diode FME-230A PDF

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A PDF

    Mosfet

    Abstract: SSF10N60F
    Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF10N60F O220F dev60F Mosfet SSF10N60F PDF

    Mosfet

    Abstract: SSF11NS65F
    Text: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge


    Original     		SSF11NS65F 36ohm O220F SSF11NS65F Mosfet PDF

    Mosfet

    Abstract: SSF13N50F
    Text: SSF13N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.41Ω(typ.) ID 13A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		SSF13N50F O220F Mosfet SSF13N50F PDF

    FME-210B

    Abstract: sanken CF35 Sanken catalog
    Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


    Original     		FME-210B Package---TO220F FME-210B 150Vguarantee D01-012EA-070322 sanken CF35 Sanken catalog PDF

    sanken lot number

    Abstract: B105 CF35 FMXJ-2164S low forward voltage fast diode
    Text: Ultra-Fast-Recovery Rectifier Diode FMXJ-2164S September, 2005 •Package-TO220F ■General Description FMXJ-2164S employs JBS structure*, i.e. the combined structure of SBD and FRD. In addition, together with our proprietary lifetime control technology, Ultra fast recovery, Low loss and


    Original     		FMXJ-2164S Package---TO220F FMXJ-2164S D01-001EA-050912 sanken lot number B105 CF35 low forward voltage fast diode PDF

    FMXA-2153S

    Abstract: 2153S sanken lot number B105 CF35 SANKEN power supply Sanken marking
    Text: Ultrafast Recovery Diode FMXA-2153S •General Description November, 2005 ■Package-TO220F Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.


    Original     		FMXA-2153S Package---TO220F D01-003EA-051128 FMXA-2153S 2153S sanken lot number B105 CF35 SANKEN power supply Sanken marking PDF

    FMXA-1106S

    Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
    Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode


    Original     		FMXA-1106S Package---TO220F-2Pin D01-002EA-051128 FMXA-1106S XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps PDF

    sanken power transistor

    Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
    Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


    Original     		FMEN-220A Package---TO220F FMEN-220A 0E-01 D01-010EA-060310 sanken power transistor CF35 sanken DSA0016518 Sanken catalog "Sanken Rectifiers" PDF

    fmw-2206

    Abstract: w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMW-2206 Mar. 2008 Schottky Barrier Rectifier General Description Package FMW-2206 is a Schottky Barrier Diode, and has achieved low TO220F 3Pin leakage current and low VF by selecting the best barrier metal. Applications


    Original     		FMW-2206 FMW-2206 O220F 0E-01 0E-02 w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t PDF

    TRANSISTOR 15n60c3

    Abstract: No abstract text available
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 TRANSISTOR 15n60c3 PDF

    SI-8050RF

    Abstract: 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers"
    Text: DC/DC Step-Down Buck Converter IC SI-8050RF December 2005 •General Descriptions ■Package-TO220F-5 SI-8000RF series has protection circuits for overcurrent and overheating, and the functions required for switching regulators. Only four discrete components are required and it


    Original     		SI-8050RF SI-8000RF Package---TO220F-5 SI-8033RF I02-003EA-051130 SI-8050RF 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers" PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor


    Original     		NTE2679 O220F 100mA, 750mA, PDF

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 PDF