L30ESDL5V0C3-2
Abstract: Diode LT n5 LT n5 ltn5 340W L30ESDL5
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
Diode LT n5
LT n5
ltn5
340W
L30ESDL5
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ltn5
Abstract: L30ESDL5V0 Diode LT n5 LT n5
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
ltn5
L30ESDL5V0
Diode LT n5
LT n5
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ltn5
Abstract: Diode LT n5 L30ESDL5V0
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
ltn5
Diode LT n5
L30ESDL5V0
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4T SOT 23
Abstract: MMBD301 SOT23 JEDEC standard orientation
Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted
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MMBD301
OT-23
O-236AB
O236AB
4T SOT 23
MMBD301
SOT23 JEDEC standard orientation
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Untitled
Abstract: No abstract text available
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
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to236ab
Abstract: MMBD301
Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD301
OT-23
O-236AB
O236AB
to236ab
MMBD301
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Diode LT n5
Abstract: GSOT-23 L30ESDL5V0C3-2 12-Peakpulse
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
Diode LT n5
GSOT-23
12-Peakpulse
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L30ESDL5V0C3-2
Abstract: Diode LT n5 L30ESD
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE- 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
Diode LT n5
L30ESD
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L30ESDL5V0C3-2
Abstract: 3-40W
Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small
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L30ESDL5V0C3-2
L30ESDL5V0C3-2
O236AB)
3-40W
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MMBD701
Abstract: No abstract text available
Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD701
OT-23
O-236AB
O236AB
MMBD701
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MMBD701
Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD701
OT-23
O-236AB
O236AB
MMBD701
D0 sot23
A0 SOT23
FS PKG CODE 49
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SOT23 JEDEC standard orientation
Abstract: SOT-23 4TF MMBD301
Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD301
OT-23
O-236AB
O236AB
SOT23 JEDEC standard orientation
SOT-23 4TF
MMBD301
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MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
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Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
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SQ2303ES
Abstract: marking code 604 SOT23
Text: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SQ2303ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2303ES*
OT-23
SQ2303ES-T1-GE3
2011/65/EU
2002/95/EC.
SQ2303ES
marking code 604 SOT23
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SQ2318ES
Abstract: No abstract text available
Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2318ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2318ES*
OT-23
SQ2318ES-T1-GE3
2011/65/EU
2002/95/EC.
SQ2318ES
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SQ2351ES
Abstract: No abstract text available
Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:
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SQ2351ES
O-236
OT-23)
AEC-Q101
SQ2351ES
OT-23
SQ2351ES-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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AOZ8202CI-12
Abstract: alpha date code System aos bar code L3 SOT23
Text: AOZ8202 One-line Bi-directional TVS Diode General Description Features The AOZ8202 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. z ESD protection for high-speed data lines:
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AOZ8202
AOZ8202
OT-23
IEC61000-4-5
AOZ8202CI-12
alpha date code System
aos bar code
L3 SOT23
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)
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2SC3265
2SA1298
O-236MOD
SC-59CEO
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2SC3340
Abstract: 2SA1324 2SC3339 2SC3426
Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage
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O-236
/SOT-23
2SA1162
15NEW)
2SC2532
2SC2714
2SC2715
2SC2716
2SC2996
2SC3340
2SA1324
2SC3339
2SC3426
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Untitled
Abstract: No abstract text available
Text: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •
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1SS294
SS294
SC-59
O-236MOD
SC-59
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)
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1SS344
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package
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1SS336
SC-59
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MMBF5486LT1
Abstract: 318C8 marking gfg 6f
Text: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol
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MMBF5486LT1/D
MMBF5486LT1
OT-23
O-236AB)
MMBF5486LT1
318C8
marking gfg 6f
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