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    TO252 PACKAGE RTHJA Search Results

    TO252 PACKAGE RTHJA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO252 PACKAGE RTHJA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252


    Original     		SPD07N20 SPU07N20 P-TO251 P-TO252 Q67040-S4120-A2 Q67040-S4112-A2 PDF

    SPD35N10

    Abstract: 35n10 P-TO252 Q67042-S4125
    Text: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A  Avalanche rated P-TO252  dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code


    Original     		SPD35N10 P-TO252 Q67042-S4125 35N10 SPD35N10 35n10 P-TO252 Q67042-S4125 PDF

    2N0623

    Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
    Text: SPD30N06S2-23 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420


    Original     		SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, SPD30N06S2-23 2N0623 S7420 ANPS071E BSPD30N06S2-23 PDF

    PN06L13

    Abstract: No abstract text available
    Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID  Logic Level V m 12.7 50 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		SPD50N06S2L-13 SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, PN06L13 PDF

    2N0615

    Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253


    Original     		SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15 PDF

    2n0680

    Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423


    Original     		SPD14N06S2-80 Q67060-S7423 2N0680 BSPD14N06S2-80, SPD14N06S2-80 2n0680 g39 SMD BSPD14N06S2-80 PDF

    2N0623

    Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
    Text: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420


    Original     		SPD30N06S2-23 SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, 2N0623 INFINEON PART MARKING to252 2N062 smd diode marking G12 PDF

    2N0615

    Abstract: SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253


    Original     		SPD30N06S2-15 SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, 2N0615 PDF

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427


    Original     		SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 a6024 PDF

    2N0822

    Abstract: SPD30N08S2-22
    Text: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature V m 21.5 30 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413


    Original     		SPD30N08S2-22 SPD30N08S2-22 Q67060-S7413 2N0822 BSPD30N08S2-22, 2N0822 PDF

    2n0680

    Abstract: BSPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 80 m ID 17 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423


    Original     		SPD14N06S2-80 SPD14N06S2-80 Q67060-S7423 2N0680 200Aay BSPD14N06S2-80, 2n0680 BSPD14N06S2-80 PDF

    PN06L13

    Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
    Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 ANPS071E BSPD50N06S2L-13 PDF

    PN06L13

    Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
    Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421


    Original     		SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 PN06L 34Dg ANPS071E BSPD50N06S2L-13 S7421 PDF

    2N0640

    Abstract: MAX408
    Text: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 40 m ID 29 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427


    Original     		SPD25N06S2-40 SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, 2N0640 MAX408 PDF

    SPD09N05

    Abstract: P-TO252 SPU09N05 spd09n
    Text: SPD09N05 SPU09N05 Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD09N05 55 V 9.2 A 0.15 Ω P-TO252 Q67000-. . . . - . .


    Original     		SPD09N05 SPU09N05 P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD09N05 P-TO252 SPU09N05 spd09n PDF

    SPD08N05L

    Abstract: SPU08N05L P-TO252
    Text: SPD08N05L SPU08N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD08N05L 55 V 8.4 A 0.18 Ω P-TO252 Q67000-. . . . - . .


    Original     		SPD08N05L SPU08N05L P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD08N05L SPU08N05L P-TO252 PDF

    pn0614

    Abstract: INFINEON PART MARKING to252 BSPD50N06S2-14 P-TO252 SPD50N06S2-14 S8045
    Text: SPD50N06S2-14 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.4 mΩ 50 • Avalanche rated A P-TO252 • dv/dt rated Type SPD50N06S2-14 Package


    Original     		SPD50N06S2-14 P-TO252 Q67060-S7418 PN0614 BSPD50N06S2-14, SPD50N06S2-14 pn0614 INFINEON PART MARKING to252 BSPD50N06S2-14 P-TO252 S8045 PDF

    2N0615

    Abstract: INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 SPD30N06S2-15
    Text: SPD30N06S2-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P-TO252 • dv/dt rated Type SPD30N06S2-15 Package


    Original     		SPD30N06S2-15 P-TO252 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 PDF

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level • 175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package


    Original     		SPD30N06S2L-23 P-TO252 Q67060-S7410 2N06L23 BSPD30N06S2L-23, SPD30N06S2L-23 2n06l23 PDF

    2N0822

    Abstract: ANPS071E BSPD30N08S2-22 SPD30N08S2-22
    Text: SPD30N08S2-22 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 75 R DS on • Enhancement mode ID • 175°C operating temperature V 21.5 mΩ 30 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD30N08S2-22 Package Ordering Code


    Original     		SPD30N08S2-22 Q67060-S7413 2N0822 BSPD30N08S2-22, SPD30N08S2-22 2N0822 ANPS071E BSPD30N08S2-22 PDF

    2N0623

    Abstract: ANPS071E BSPD30N06S2-23 SPD30N06S2-23 Q67060-S7420
    Text: SPD30N06S2-23 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 23 mΩ ID 30 A • 175°C operating temperature • Avalanche rated P- TO252 -3-11 • dv/dt rated Type SPD30N06S2-23 Package Ordering Code


    Original     		SPD30N06S2-23 Q67060-S7420 2N0623 BSPD30N06S2-23, SPD30N06S2-23 2N0623 ANPS071E BSPD30N06S2-23 Q67060-S7420 PDF

    SGD04N60

    Abstract: BUP410D P-TO252
    Text: SGD04N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD04N60 600V 4A P-TO252 Q67040-A . . . . Maximum Ratings


    Original     		SGD04N60 P-TO252 Q67040-A BUP410D Apr-07-1998 SGD04N60 BUP410D P-TO252 PDF

    P-TO252

    Abstract: SPD08P05 SPU08P05
    Text: SPD08P05 Preliminary data SPU08P05 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD08P05 -50 V -8 A 0.3 Ω P-TO252 Q67000-. . . - . . . SPU08P05 -50 V -8 A


    Original     		SPD08P05 SPU08P05 P-TO252 Q67000-. P-TO251 23/Jan/1998 P-TO252 SPD08P05 SPU08P05 PDF

    2n06l23

    Abstract: Q67060-S7410 INFINEON PART MARKING INFINEON PART MARKING to252 P-TO252 SPD30N06S2L-23
    Text: SPD30N06S2L-23 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package


    Original     		SPD30N06S2L-23 P-TO252 Q67060-S7410 2N06L23 BSPD30N06S2L-23, SPD30N06S2L-23 2n06l23 Q67060-S7410 INFINEON PART MARKING INFINEON PART MARKING to252 P-TO252 PDF