Untitled
Abstract: No abstract text available
Text: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252
|
Original
|
PDF
|
SPD07N20
SPU07N20
P-TO251
P-TO252
Q67040-S4120-A2
Q67040-S4112-A2
|
SPD35N10
Abstract: 35n10 P-TO252 Q67042-S4125
Text: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS N-Channel Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A Avalanche rated P-TO252 dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code
|
Original
|
PDF
|
SPD35N10
P-TO252
Q67042-S4125
35N10
SPD35N10
35n10
P-TO252
Q67042-S4125
|
06n80c3
Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
|
Original
|
PDF
|
SPD06N80C3
PG-TO252
Q67040-S4352
06N80C3
PG-TO252-3-1,
PG-TO252-3-11,
06n80c3
PG-TO252-3-11
TRANSISTOR SMD MARKING CODE 2A
SPD06N80C3
Q67040-S4352
TRANSISTOR SMD MARKING CODE WS
|
Untitled
Abstract: No abstract text available
Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
|
Original
|
PDF
|
SPD06N80C3
PG-TO252
SPD06N80C3
Q67040-S4352
06N80C3
|
Untitled
Abstract: No abstract text available
Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
|
Original
|
PDF
|
SPD06N80C3
PG-TO252
SPD06N80C3
Q67040-S4352
06N80C3
|
2N0623
Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
Text: SPD30N06S2-23 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420
|
Original
|
PDF
|
SPD30N06S2-23
Q67060-S7420
2N0623
BSPD30N06S2-23,
SPD30N06S2-23
2N0623
S7420
ANPS071E
BSPD30N06S2-23
|
06n80c3
Abstract: P-TO252 SPD06N80C3
Text: SPD06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
|
Original
|
PDF
|
SPD06N80C3
P-TO252
Q67040-S4352
06N80C3
06n80c3
P-TO252
SPD06N80C3
|
PN06L13
Abstract: No abstract text available
Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID Logic Level V m 12.7 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
|
Original
|
PDF
|
SPD50N06S2L-13
SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
PN06L13
|
2N0615
Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253
|
Original
|
PDF
|
SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
SPD30N06S2-15
2N0615
ANPS071E
BSPD30N06S2-15
|
2n0680
Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423
|
Original
|
PDF
|
SPD14N06S2-80
Q67060-S7423
2N0680
BSPD14N06S2-80,
SPD14N06S2-80
2n0680
g39 SMD
BSPD14N06S2-80
|
2N0623
Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
Text: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420
|
Original
|
PDF
|
SPD30N06S2-23
SPD30N06S2-23
Q67060-S7420
2N0623
BSPD30N06S2-23,
2N0623
INFINEON PART MARKING to252
2N062
smd diode marking G12
|
2N0615
Abstract: SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253
|
Original
|
PDF
|
SPD30N06S2-15
SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
2N0615
|
2N0640
Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427
|
Original
|
PDF
|
SPD25N06S2-40
Q67060-S7427
2N0640
BSPD25N06S2-40,
SPD25N06S2-40
2N0640
BSPD25N06S2-40
a6024
|
2N0822
Abstract: SPD30N08S2-22
Text: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 21.5 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413
|
Original
|
PDF
|
SPD30N08S2-22
SPD30N08S2-22
Q67060-S7413
2N0822
BSPD30N08S2-22,
2N0822
|
|
|
PN06L13
Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
|
Original
|
PDF
|
SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
ANPS071E
BSPD50N06S2L-13
|
PN06L13
Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
|
Original
|
PDF
|
SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
PN06L
34Dg
ANPS071E
BSPD50N06S2L-13
S7421
|
2N0640
Abstract: MAX408
Text: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 V R DS on 40 m ID 29 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427
|
Original
|
PDF
|
SPD25N06S2-40
SPD25N06S2-40
Q67060-S7427
2N0640
BSPD25N06S2-40,
2N0640
MAX408
|
pn0614
Abstract: Q67060-S7418 smd diode 67A
Text: SPD50N06S2-14 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 14.4 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2-14 Package Ordering Code P- TO252 -3-11 Q67060-S7418
|
Original
|
PDF
|
SPD50N06S2-14
SPD50N06S2-14
Q67060-S7418
PN0614
BSPD50N06S2-14,
pn0614
Q67060-S7418
smd diode 67A
|
Untitled
Abstract: No abstract text available
Text: Features Description • Short circuit protection N channel power FET with charge pump, ground referenced CMOS compatible input and diagnostic output with integrated protective functions. • Current limitation • Thermal shutdown with restart. TO252-5L • Overvoltage protection including load dump
|
Original
|
PDF
|
O252-5L
FDDS100H06
|
01N60S5
Abstract: 01n60 SPD01N60S5 SPU01N60S5
Text: SPU01N60S5 SPD01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252
|
Original
|
PDF
|
SPU01N60S5
SPD01N60S5
SPUx7N60S5/SPDx7N60S5
P-TO252
P-TO251-3-1
P-TO251-3-1
Q67040-S4193
01N60S5
01n60
SPD01N60S5
|
Untitled
Abstract: No abstract text available
Text: SPU06N80C2 SPD06N80C2 Target data sheet Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Worldwide best R DS on in TO251 and TO252 · Ultra low gate charge · Periodic avalanche rated
|
Original
|
PDF
|
SPU06N80C2
SPD06N80C2
P-TO252
P-TO251-3-1
P-TO251-3-1
|
4x1N4001
Abstract: CL-21 capacitor cq 622 CQ 417 VDR07 VDR06 AEP02792 4307 VDR025 AES02793
Text: Power-Charge-Pump and Low-Drop Voltage Regulator TLE 4307 Power Charge Pump Circuit Features • • • • High Current Capability Short Circuit Protection Overtemperature Protection Active Zener Circuit P-TO252-5-1 Very Low Drop Voltage Regulator Features
|
Original
|
PDF
|
P-TO252-5-1
Q67006-A9444
Q67006-A9415
4x1N4001
CL-21 capacitor
cq 622
CQ 417
VDR07
VDR06
AEP02792
4307
VDR025
AES02793
|
marking 113a
Abstract: No abstract text available
Text: SPD50N03S2L-06 h OptiMOS&!Power-Transistor Feature % N-Channel Product Summary VDS 30 V % Enhancement mode RDS on 6.4 m" % Logic Level ID 50 A Ph- TO252 -3 % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance
|
Original
|
PDF
|
SPD50N03S2L-06
PN03L06
QS-0Z-2008
SPD50N03S2L-06
PG-TO252-3
marking 113a
|
pn0307
Abstract: No abstract text available
Text: SPD50N03S2-07 G OptiMOS&!Power-Transistor Product Summary VDS 30 V Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS on product (FOM) RDS(on) 7.3 m" ID 50 A Ph-TO252-3 %!Superior thermal resistance %!175°C operating temperature % Avalanche rated
|
Original
|
PDF
|
SPD50N03S2-07
Ph-TO252-3
PN0307
QS-0Z-2008
SPD50N03S2-07
pn0307
|