Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO263 PACKAGE RTHJA Search Results

    TO263 PACKAGE RTHJA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO263 PACKAGE RTHJA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB10N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 100 R DS on 170 m ID 10.3 A  Avalanche rated V P-TO263-3-2  dv/dt rated Type Package Ordering Code Marking SPB10N10 P-TO263-3-2


    Original     		SPB10N10 P-TO263-3-2 Q67042-S4119 10N10 PDF

    Q67042-S4102

    Abstract: 21N10
    Text: SPB21N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 80 m ID 21 A  Avalanche rated P-TO263-3-2  dv/dt rated Type Package Ordering Code Marking SPB21N10 P-TO263-3-2 Q67042-S4102


    Original     		SPB21N10 P-TO263-3-2 Q67042-S4102 21N10 Q67042-S4102 21N10 PDF

    35N10

    Abstract: SPB35N10 SPP35N10
    Text: SPB35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A  Avalanche rated P-TO263-3-2  dv/dt rated Type Package Ordering Code Marking SPB35N10 P-TO263-3-2 Q67042-S4103


    Original     		SPB35N10 P-TO263-3-2 Q67042-S4103 35N10 35N10 SPB35N10 SPP35N10 PDF

    SPB10N10L

    Abstract: SPP10N10L 10N10L IEC61249-2-21 P-TO263-3 SPB10N10LG SMD 81A
    Text: SPB10N10L G SIPMOSTM Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated;  dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package SPB10N10L P-TO263-3 VDS 100 V


    Original     		SPB10N10L P-TO263-3 IEC61249-2-21 10N10L SPP10N10L O263-3 SPB10N10L SPP10N10L 10N10L IEC61249-2-21 P-TO263-3 SPB10N10LG SMD 81A PDF

    2N06LH5

    Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5 PDF

    2n0612

    Abstract: smd diode marking 77 smd diode 77a S6030 BSPP77N06S2-12 140W SPB77N06S2-12 SPP77N06S2-12
    Text: SPP77N06S2-12 SPB77N06S2-12 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 12 m ID 77 A P-TO263-3-2 Type Package Ordering Code


    Original     		SPP77N06S2-12 SPB77N06S2-12 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6029 2N0612 P-TO263-3-2 2n0612 smd diode marking 77 smd diode 77a S6030 BSPP77N06S2-12 140W SPB77N06S2-12 SPP77N06S2-12 PDF

    2n0609

    Abstract: 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09
    Text: SPP80N06S2-09 SPB80N06S2-09 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 9.1 m ID 80 A P-TO263-3-2 Type Package Ordering Code


    Original     		SPP80N06S2-09 SPB80N06S2-09 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6025 2N0609 P-TO263-3-2 2n0609 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09 PDF

    2n0612

    Abstract: smd diode 77a S6030 Q67060-S6030 diode 77a BSPP77N06S2-12 SPB77N06S2-12 SPP77N06S2-12 77A DIODE Q67060-S6029
    Text: SPP77N06S2-12 SPB77N06S2-12 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 12 m ID 80 A P- TO263 -3-2 Type Package Ordering Code SPP77N06S2-12


    Original     		SPP77N06S2-12 SPB77N06S2-12 Q67060-S6029 2N0612 Q67060-S6030 BSPP77N06S2-12 BSPB77N06S2-12, 2n0612 smd diode 77a S6030 Q67060-S6030 diode 77a SPB77N06S2-12 SPP77N06S2-12 77A DIODE Q67060-S6029 PDF

    smd marking 58a

    Abstract: 80N10L IEC61249-2-21 SPB80N10L SPP80N10L
    Text: SPB80N10L G SIPMOSΤΜPower-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package SPB80N10L P-TO263-3 100 VDS V RDS on


    Original     		SPB80N10L P-TO263-3 IEC61249-2-21 80N10L SPP80N10L O263-3 smd marking 58a 80N10L IEC61249-2-21 SPB80N10L SPP80N10L PDF

    2n0607

    Abstract: 2n0607 equivalent SPB80N06S2-07 SPP80N06S2-07 Q67060-S6026
    Text: SPP80N06S2-07 SPB80N06S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 6.6 m ID 80 A P-TO263-3-2 Type Package Ordering Code


    Original     		SPP80N06S2-07 SPB80N06S2-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6024 2N0607 P-TO263-3-2 2n0607 2n0607 equivalent SPB80N06S2-07 SPP80N06S2-07 Q67060-S6026 PDF

    DIODE H5 SMD

    Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 PDF

    2N06L11

    Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code


    Original     		SPP80N06S2L-11 SPB80N06S2L-11 Q67060-S6035 2N06L11 Q67060-S6036 BSPP80N06S2L-11 BSPB80N06S2L-11, 2N06L11 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L PDF

    Q67042-S4164

    Abstract: TRANSISTOR SMD MARKING CODE 42 10N10L SPB10N10L SPP10N10L SMD 81A
    Text: SPB10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS on 154 m ID 10.3 A P-TO263-3-2 Type Package Ordering Code Marking SPB10N10L


    Original     		SPB10N10L P-TO263-3-2 Q67042-S4164 10N10L Q67042-S4164 TRANSISTOR SMD MARKING CODE 42 10N10L SPB10N10L SPP10N10L SMD 81A PDF

    smd diode marking 69a

    Abstract: 2N06L06 SPB80N06S2L-06 SPP80N06S2L-06
    Text: SPP80N06S2L-06 SPB80N06S2L-06 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 6.3 m ID 80 A P-TO263-3-2 Type Package


    Original     		SPP80N06S2L-06 SPB80N06S2L-06 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6033 2N06L06 P-TO263-3-2 smd diode marking 69a 2N06L06 SPB80N06S2L-06 SPP80N06S2L-06 PDF

    2N06H5

    Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, 2N06H5 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 PDF

    2n0605

    Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
    Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code


    Original     		SPP80N06S2-05 SPB80N06S2-05 Q67040-S4245 2N0605 Q67040-S4255 BSPP80N06S2-05, BSPB80N06S2-05 2n0605 BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking PDF

    47N10

    Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m ID 47 A P-TO263-3-2 Type Package


    Original     		SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 INFINEON PART MARKING SPB47N10 SPI47N10 PDF

    2n0607

    Abstract: 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07
    Text: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 6.6 m ID 80 A P- TO263 -3-2 Type Package


    Original     		SPI80N06S2-07 SPP80N06S2-07 SPB80N06S2-07 SPP80N06S2-07 Q67060-S6024 2N0607 Q67060-S6026 2n0607 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 PDF

    2N06L11

    Abstract: S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11
    Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 11 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-11 Package


    Original     		SPP80N06S2L-11 SPB80N06S2L-11 Q67060-S6035 Q67060-S6036 2N06L11 BSPP80N06S2L-11 BSPB80N06S2L-11, 2N06L11 S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11 PDF

    2n0609

    Abstract: 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 9.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 2N0609 Q67060-S6027 BSPP80N06S2-09 BSPB80N06S2-09, 2n0609 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025 PDF

    P-TO263-5-1

    Abstract: Package and Thermal Information 417K P-TO-263-5-1
    Text: Package and Thermal Information P-TO263-5-1 Footprint/Dimensions 4.4 ±0.1 10 ±0.2 1.27±0.1 B 0.1 ±0.1 A 1 GND 2.4 ±0.1 81 4.6 0.05 4.7 ±0.5 2.7 ±0.3 15) 9.25 ±0.2 0.6 10.8 9.4 1.1 7.9 1±0.3 8.5 1) 5 16.15 5x0.8 ±0.1 0.5 ±0.1 4x1.7 Reflow soldering


    Original     		P-TO263-5-1 P-TO263-5-1 Package and Thermal Information 417K P-TO-263-5-1 PDF

    2n0609

    Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 R DS on 9.1 m ID 80 A P- TO263 -3-2  Avalanche rated V P- TO220 -3-1  dv/dt rated Type SPP80N06S2-09 Package


    Original     		SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, Q67060-S6027 3140PF 2N060 INFINEON PART MARKING to263 PDF

    2n04h4

    Abstract: infineon 2N04H4 SPB80N04S2-H4 SPP80N04S2-H4
    Text: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 40 RDS on 4 m ID 80 A P-TO263-3-2 Type Package Ordering Code


    Original     		SPP80N04S2-H4 SPB80N04S2-H4 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S6014 2N04H4 P-TO263-3-2 2n04h4 infineon 2N04H4 SPB80N04S2-H4 SPP80N04S2-H4 PDF

    2n06l09

    Abstract: SPB80N06S2L-11 SPP80N06S2L-11 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 11 m ID 80 A P-TO263-3-2 Type Package


    Original     		SPP80N06S2L-11 SPB80N06S2L-11 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6035 2N06L09 P-TO263-3-2 2n06l09 SPB80N06S2L-11 SPP80N06S2L-11 2N06L PDF