Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO263-3 PACKAGE Search Results

    TO263-3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO263-3 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FAX# 408 944-0970 TITLE 3 LEAD TO263 PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # TO263-3LD-PL-1 UNIT INCH/MM θ4 θ1 θ2 θ1 θ3 θ1 θ2 θ3 θ4 θ1 Rev A ECN 013112HC07 Originator S. YEH Change New release Reason New


    Original     		O263-3LD-PL-1 013112HC07 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB10N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 100 R DS on 170 m ID 10.3 A  Avalanche rated V P-TO263-3-2  dv/dt rated Type Package Ordering Code Marking SPB10N10 P-TO263-3-2


    Original     		SPB10N10 P-TO263-3-2 Q67042-S4119 10N10 PDF

    Q67042-S4102

    Abstract: 21N10
    Text: SPB21N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 80 m ID 21 A  Avalanche rated P-TO263-3-2  dv/dt rated Type Package Ordering Code Marking SPB21N10 P-TO263-3-2 Q67042-S4102


    Original     		SPB21N10 P-TO263-3-2 Q67042-S4102 21N10 Q67042-S4102 21N10 PDF

    35N10

    Abstract: SPB35N10 SPP35N10
    Text: SPB35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A  Avalanche rated P-TO263-3-2  dv/dt rated Type Package Ordering Code Marking SPB35N10 P-TO263-3-2 Q67042-S4103


    Original     		SPB35N10 P-TO263-3-2 Q67042-S4103 35N10 35N10 SPB35N10 SPP35N10 PDF

    Carrier tape for TO263 package

    Abstract: 16101
    Text: Package Information TO263 DD2-PAK Outline Dimensions 3-pin TO263 Outline Dimensions A E L 2 E 1 C 2 D 1 2 D 1 L 3 L 3 L 4 0 ~ 5 L 1 A A e Symbol B B 2 D e ta il A E 2 C Z D e ta il A ( R o ta te d 9 0 ) Dimensions in mil Min. Nom. Max. A 170 ¾ 185 B 28


    Original     		PDF

    6R099

    Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
    Text: IPB60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA IPB60R099CPA PG-TO263-3-2 6R099A PG-TO263-3-2 6R099 IPB60R099 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PDF

    PG-TO263-3-2

    Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO263-3-2 PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199 PDF

    Diode SMD ED 98

    Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me PDF

    2N06LH5

    Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5 PDF

    35n10

    Abstract: SMD marking code 35A
    Text: SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated P-TO262-3-1 V R DS on 44 m ID 35 A P-TO263-3-2 P-TO220-3-1  dv/dt rated Type SPP35N10 Package


    Original     		SPI35N10 SPP35N10 SPB35N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB35N10 SPI35N10 P-TO220-3-1 35n10 SMD marking code 35A PDF

    DIODE H5 SMD

    Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 PDF

    2N06L11

    Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code


    Original     		SPP80N06S2L-11 SPB80N06S2L-11 Q67060-S6035 2N06L11 Q67060-S6036 BSPP80N06S2L-11 BSPB80N06S2L-11, 2N06L11 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L PDF

    2N06H5

    Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, 2N06H5 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 PDF

    07N60C3

    Abstract: No abstract text available
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3 PDF

    2n0609

    Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 R DS on 9.1 m ID 80 A P- TO263 -3-2  Avalanche rated V P- TO220 -3-1  dv/dt rated Type SPP80N06S2-09 Package


    Original     		SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, Q67060-S6027 3140PF 2N060 INFINEON PART MARKING to263 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO220-3/TO263-3 Voltage Regulator Evaluation Board User’s Guide 2009 Microchip Technology Inc. DS51818A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		O220-3/TO263-3 DS51818A DS51818A-page PDF

    47N10

    Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m ID 47 A P-TO263-3-2 Type Package


    Original     		SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 INFINEON PART MARKING SPB47N10 SPI47N10 PDF

    2n0607

    Abstract: 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07
    Text: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 6.6 m ID 80 A P- TO263 -3-2 Type Package


    Original     		SPI80N06S2-07 SPP80N06S2-07 SPB80N06S2-07 SPP80N06S2-07 Q67060-S6024 2N0607 Q67060-S6026 2n0607 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 PDF

    2N06L11

    Abstract: S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11
    Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 11 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-11 Package


    Original     		SPP80N06S2L-11 SPB80N06S2L-11 Q67060-S6035 Q67060-S6036 2N06L11 BSPP80N06S2L-11 BSPB80N06S2L-11, 2N06L11 S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11 PDF

    2n0609

    Abstract: 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 9.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 2N0609 Q67060-S6027 BSPP80N06S2-09 BSPB80N06S2-09, 2n0609 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025 PDF

    04n50c3

    Abstract: SPA04N50C3
    Text: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SPA04N50C3 PDF

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331 PDF

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060 PDF