HX8340B
Abstract: HX8340-B mx 362-0
Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8340-B
176RGB
224October,
225October,
HX8340B
mx 362-0
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.
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850NM
HFE8004-102,
HFE8012-102
HFE80xx-102
1-866-MY-VCSEL
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VCSEL array common anode
Abstract: No abstract text available
Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.
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850NM
HFE8004-102,
HFE8012-102
HFE80xx-102
1-866-MY-VCSEL
VCSEL array common anode
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HX8340-B
Abstract: diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99
Text: DATA SHEET DOC No. HX8340-B(T -DS ) HX8340-B(T) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 February, 2008 HX8340-B(T) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8340-B
176RGB
dummy19
diode s524
HX8340
HX8340B
crl 858
TVS DIODE KVP 99
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29lv160bt
Abstract: BB 555 MX29LV160BT SA10 SA11 SA12 SA13
Text: ADVANCED INFORMATION MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection
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MX29LV160BT/BB
16M-BIT
2Mx8/1Mx16]
100mA
48-Ball
MX29LV160BTXEC/BTXEI/BBXEC/BBXEI)
PM1041
29lv160bt
BB 555
MX29LV160BT
SA10
SA11
SA12
SA13
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X5650
Abstract: X5767 XC7336Q PC44 XC7300 XC7336 XC7336-10
Text: XC7336 36-Macrocell CMOS EPLD Product Specifications interconnected by the 100%-populated Universal Interconnect Matrix UIM . Features Ultra high-performance EPLD – 5 ns pin-to-pin speed on all fast inputs – 167 MHz maximum clock frequency Each Fast Function Block has 24 inputs and contains nine
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XC7336
36-Macrocell
XC7336Q
24V9ip
44-Pin
to70oC
-40oC
XC7336
PQ100
PQ160
X5650
X5767
XC7336Q
PC44
XC7300
XC7336-10
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laser DFB 1550nm 10mW
Abstract: 12channel fiber array
Text: DATA SHEET 4GBPS 850NM VCSEL ARRAYS HFE8004-102, HFE8012-102 FEATURES: Stabilized and fully tested Designed for drive currents between 3 and 7 mA average Optimized for low dependence of electrical properties over temperature High speed ≥ 6 GHz The HFE80xx-102 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser die arrays optimized for high-speed data communications.
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850NM
HFE8004-102,
HFE8012-102
HFE80xx-102
1-866-MY-VCSEL
laser DFB 1550nm 10mW
12channel fiber array
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HX8347-G
Abstract: No abstract text available
Text: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8347-G
240RGB
250um
184October,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001
BPL/BFL/BFTL/BTRL/BSTL/BSRL-70
072-WORD
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
32-P-0820-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a
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TC55V1001
F/FT/TR/ST/SR-85
072-WORD
TC55V1001F/FT/TR/ST/SR
576-bit
775TYP
32-P-0820-0
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KNC 201 15
Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Text: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9
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CHIPS/280
33-MHZ*
33Mhz
CPI022
CPIQ22
82C226
100-Pin
KNC 201 15
K1503
hp 1502 vga
knc 201 39
82C452
CD 1517 intergrated circuit
KNC 201
82C322
LIM EMS 4.0
82C631
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V
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144-WORD
16-BIT
TC554161
FTL-70L
TC554161FTL
304-bit
54-P-400-0
62MAX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC554161 FTL-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 3 to
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TC554161
FTL-70V
144-WORD
16-BIT
TC554161FTL
304-bit
54-P-400-0
62MAX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a
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072-WORD
TC55V1001
F/FT/TR/ST/SR-85
TC55V1001F/FT/TR/ST/SR
576-bit
32-P-0820-0
32-P-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55257DPL/DFL/DFTL/DTRL-55V,-70V,-85V TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates
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TC55257DPL/DFL/DFTL/DTRL-55V
TC55257DPL/DFL/DFTL/DTRL
144-bit
OP28-P-450-1
28-P-0
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TC554161FTL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V
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TC554161FTL-70
144-WORD
16-BIT
TC554161FTL
304-bit
54-P-400-0
62MAX
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM
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TC551001
BPL/BFL/BFTL/BTRL/BSTL/BSRL-70L
072-WORD
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
cont50)
32-P-0820-0
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ht321
Abstract: No abstract text available
Text: WESTERN DIGITAL CORP 4bE » • ^710220 GG12fci74 ^ m\ùì>c D A T A SH E E T WD7910, WD7910LP System Controller Devices \ WESTERN DIGITAL 9000-2615 WESTERN DIGITAL CORP HbE » ■ iTiaaaa ooi5b7S □ ■ u k -r-SZ ' 33 -65 Copyright 1991 Western Digital Corporation
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GG12fci74
WD7910,
WD7910LP
WD7910/WD7910LP
T-52-33-05
ht321
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80286 schematic
Abstract: fe3031 80286 mouse Western Digital floppy disk FE3021A FE3001a FE3031A CHIPset for 80286 8042 keyboard controller floppy controller
Text: V m =1710226 O O G b b ll T • UDC " T '5 2 - 3 V 2 . 1 FE3021A Address Buffer and Memory Controller g? WESTERN DIGITAL WESTERN D IG IT A L CORP HOE D H =1716523 aO O bblE 1 HUDC FE3021A TABLE OF C O N TEN TS T-52-33-21 Page P R E F A C E .
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FE3021A
FE3021A
T-52-33-21
J71fl22fl
T-52-33-21
132-PIN
80286 schematic
fe3031
80286 mouse
Western Digital floppy disk
FE3001a
FE3031A
CHIPset for 80286
8042 keyboard controller
floppy controller
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