2N3609
Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3
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TP0102N3
TPOS02N3
TP0102N2
TP0602N2
2N3609
MFE823
2N4352
3N208
2N4120
2N4067
2N5548
diode 600m
nec 500t
3sj11a
3n156
3N155
to99 mosfet
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2N4044
Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Text: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA
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3N165
T0-99
3N166
3N188
3N189
3N190
2N4044
2N4045
2N4100
2N4878
3N191
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3N188
Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
Text: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified
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00G03SM
3N188-3N191
3N188,
3N189
3N190,
3N191
10sec)
-500nA,
-500pA
-500HA,
3N188
X3N189
3N189
3N190
3N191
X3N188
X3N190
X3N191
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TO99 package
Abstract: ICL7667MJA/883B macy1-x8 ICL7667 CDIP2-T8 ICL7667MJA
Text: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter TV JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8 Case Outline Package Code
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ICL7667M
/883B
Mil-Std-1835
Mil-Std-1835
Mil-Std-883:
Mil-Std-883.
Mil-Std-883
ICL7667Mxx/883B
TO99 package
ICL7667MJA/883B
macy1-x8
ICL7667
CDIP2-T8
ICL7667MJA
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PDF
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5962-8766001PA
Abstract: No abstract text available
Text: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B SMD Number 5962-87660 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM G TV P JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8
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ICL7667M
/883B
Mil-Std-1835
Mil-Std-1835
Mil-Std-883:
Mil-Std-883.
Mil-Std-883
ICL7667Mxx/883B
5962-8766001PA
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PDF
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5962-8766001GC
Abstract: No abstract text available
Text: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B SMD Number 5962-87660 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM G TV P JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8
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ICL7667M
/883B
Mil-Std-1835
Mil-Std-883:
Mil-Std-883.
Mil-Std-883
ICL7667Mxx/883B
5962-8766001GC
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PDF
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3N165
Abstract: 3N166 3N170 X3N165-66
Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)
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3N165
3N166
3N165.
3N166.
100MHz
3N165
-55oC
3N170
300ms.
DS018
3N166
X3N165-66
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3N166
Abstract: 3N165 3N170 73Package
Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)
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3N165
3N166
3N165.
3N166.
-10mA,
100MHz
3N165
-55oC
3N170
3N166
73Package
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3N190
Abstract: TO-99 3N165 3N166 3N191 ITC5911 ITC5912
Text: HARRIS SEMICOND SECTOR 4 3 0 2 2 7 1 0 0 1 5 7 G 3 .4 27 E D IHAS -3/-Z Differential Amplifiers Continued 5 V'T-Z7-Z£ Junction FETs — N-Channel (Continued) PART NUMBER ITC5911 ITC5912 Vqs1-2 aVGS mV MV/°C PACKAGE Max Max TO-99 TO-99 10 15 20 40 •g
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OCR Scan
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G01S7G3
ITC5911
ITC5912
10kHz
3N165
3N190
TO-99
3N166
3N191
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3N190
Abstract: 3N190-91 3N191 X3N190-91
Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)
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3N190
3N191
3N190-3N191
3N190,
-65oC
200oC
-55oage
-55oC
125oC
3N190-91
3N191
X3N190-91
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3N190
Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)
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3N190
3N191
3N190-3N191
3N190,
-65oC
200oC
-55oC
125oC
3N188
3N190-91
3N191
X3N190-91
C2506
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Untitled
Abstract: No abstract text available
Text: Œ\ ICL7667 HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Features Description • Fast Rise and Fall Times - 30ns with 1000pF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current
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ICL7667
1000pF
ICL7667
ICL7667â
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MAX8211
Abstract: MAX8212 Programmable Voltage MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA ICL8212s
Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications
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ICL8211/ICL8212
MAX8211)
MAX8212)
MAX8211CPA
MAX8211CSA
MAX8211CUA
MAX8211CTY
MAX8211EPA
MAX8211ESA
MAX8211Eage
MAX8211
MAX8212
Programmable Voltage
MAX8211CPA
MAX8211CSA
MAX8211CTY
MAX8211CUA
MAX8211EPA
MAX8211ESA
ICL8212s
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PDF
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MAX8211
Abstract: MAX8212 MAX8211MSA max8212cpa MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA
Text: 19-0539; Rev 5; 9/08 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features Maxim’s MAX8211 and MAX8212 are CMOS micropower voltage detectors that warn microprocessors µPs of power failures. Each contains a comparator, a 1.5V
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MAX8211
MAX8212
MAX8211/MAX8212
MAX8211MSA
max8212cpa
MAX8211CPA
MAX8211CSA
MAX8211CTY
MAX8211CUA
MAX8211EPA
MAX8211ESA
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PDF
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|
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MAX722
Abstract: MAX717 MAX753 MAX714
Text: POWER MANAGEMENT I BATTERY CHARGERS MULTI-FUNCTION SUPPLIES * MAX712 NiCd/NiMH, zero voltage-slope detection f t MAX713 (NiCd/NiMH, negative voltage-slope detection) LOW-SIDE MOSFET DRIVERS M AX626 (2A, 4Q, dual inverting) MAX613 MAX627 (2A, 4 ft, dual noninverting)
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MAX613
MAX614
MAX620
MAX712
MAX713
AX626
MAX627
MAX628
MAX621
MAX622
MAX722
MAX717
MAX753
MAX714
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PDF
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Untitled
Abstract: No abstract text available
Text: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189
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OCR Scan
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4M322
00003SM
3N188-3N181
3N190-3N191
3N188-3N189
3N188,
3N189
3N190,
3N191
-500nA,
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PDF
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MAX8212
Abstract: MAX8211 MAX8211CUA MAX8211EPA MAX8211ESA MAX8211CPA MAX8211CSA MAX8211CTY
Text: 19-0539; Rev 3; 1/95 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ _Applications µP Voltage Monitoring Undervoltage Detection Overvoltage Detection
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ICL8211/ICL8212
MAX8211)
MAX8212)
MAX8211CPA
MAX8211CSA
MAX8211CUA
MAX8211CTY
MAX8211EPA
MAX8211ESA
MAX821ILLIMETERS
MAX8212
MAX8211
MAX8211CUA
MAX8211EPA
MAX8211ESA
MAX8211CPA
MAX8211CSA
MAX8211CTY
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PDF
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L7667
Abstract: CL7667 ICL7667
Text: E G E SOLID STATE Gl 38 750 8 1 G E S O L ID DE'| 3075001 DDlOSba 0 STATE 01E 10562 D T - S l - i Z - W ñ ICL7667 «I Dual Power MOSFET Driver Cl 01 »1 GENERAL DESCRIPTION FEATURES The ICL7667 is a dual monolithic high-speed driver de signed to convert T T L level signals into high current outputs
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OCR Scan
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ICL7667
ICL7667
L7667
CL7667
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PDF
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MAX8212
Abstract: MAX8211
Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications
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MAX8211
MAX8212
MAX8212,
21-0036J
MAX8212ESA-T
MAX8212CUA
MAX8212CUA-T
MAX8212CUA+
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PDF
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IC 8212 internal block diagram
Abstract: L8211 AX8212 MAX8212 MAX8211 8212 functional block diagram
Text: JVKÆXAJVK 79 0539; Rev 3; 1/95 M icroprocessor Voltage M onitors w ith Program m able Voltage D etectio n The MAX8211 provides a 7mA current-limited output sink whenever the voltage applied to the threshold pin is less than the 1.5V internal reference. In the MAX8212, a voltage
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OCR Scan
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MAX8211
MAX8212
IC 8212 internal block diagram
L8211
AX8212
8212 functional block diagram
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PDF
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MAX8212
Abstract: MAX8211 Programmable Voltage microprocessor 8212 block diagram ICL8211
Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications
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MAX8211
MAX8212
MAX8212,
volt12ESA+
MAX8212ESA
MAX8212ESA
MAX8212ESA-T
MAX8212C
Programmable Voltage
microprocessor 8212 block diagram
ICL8211
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PDF
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ICL7667
Abstract: No abstract text available
Text: ICL7667 fil HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Description Features • Fast Rise and Fall Times - 30ns with lOOOpF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current
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OCR Scan
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ICL7667
ICL7667
ICL7667â
250kHz
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PDF
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AX8211
Abstract: l8211 f 8212
Text: 19-0539; Rev 3; 1/95 y k i> J X i> M M icroprocessor Voltage M onitors w ith Program m able Voltage D etectio n D e s c rip tio n The MAX8211 provides a 7mA current-limited output sink whenever the voltage applied to the threshold pin is less than the 1.5V internal reference. In the MAX8212, a voltage
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OCR Scan
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MAX8211
MAX8212
AX8211
l8211
f 8212
|
PDF
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MAX8212
Abstract: MAX8211
Text: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications
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MAX8211
MAX8212
MAX8212,
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