marking A08
Abstract: RT9014 RT9014-PQW DS9014 RF AMPLIFIER marking A08
Text: RT9014/A Preliminary Ultra Low Noise 300mA Dual LDO Regulator with POR, NMOS Driver and Requiring No Bypass Capacitor General Description Features RT9014/A is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA, an open drain driver
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RT9014/A
300mA
RT9014/A
300mA,
150mA
240mV
300mA)
DS9014/A-08
marking A08
RT9014
RT9014-PQW
DS9014
RF AMPLIFIER marking A08
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Untitled
Abstract: No abstract text available
Text: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0201 Rev.2.01 Dec 27, 2007 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when
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M62382FP
12-bit
REJ03D0882-0201
M62382FP
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Untitled
Abstract: No abstract text available
Text: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0200 Rev.2.00 Dec 15, 2006 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when
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M62382FP
12-bit
REJ03D0882-0200
M62382FP
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Untitled
Abstract: No abstract text available
Text: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0300 Rev.3.00 Mar 25, 2008 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when
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M62382FP
12-bit
REJ03D0882-0300
M62382FP
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IC 4093
Abstract: MARK A03 M62382FP PLQP0100KB-A D1179 2CH3D
Text: M62382FP 5 V Type 12-bit 4ch Composite Multiplying D/A Converter REJ03D0882-0300 Rev.3.00 Mar 25, 2008 Description The M62382FP is a semiconductor integrated circuit of 5 V CMOS structure with 12-bit 4 channels of built-in multiplying D/A converters and 8-bit 8 channels of built-in multiplying D/A converters. 8-bit D/A converters, when
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M62382FP
12-bit
REJ03D0882-0300
M62382FP
IC 4093
MARK A03
PLQP0100KB-A
D1179
2CH3D
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WEDPN8M64VR-XBX
Abstract: No abstract text available
Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a
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WEDPN8M64VR-XBX
8Mx64
64MByte
512Mb)
432-bit
16-bit
WEDPN8M64VR-XBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing
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8Mx64
2x8Mx32
4x8Mx16
WEDPN8M64VR-XBX
WEDPN8M64VR-XBX
64MByte
512Mb
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456
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WEDPN16M64VR-XBX
WEDPN16M64VR-XBX
16MX64
128MByte
66MHz-133MHz
66MHz-125MHz
750mA
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16MX64
Abstract: WEDPN16M64VR-XBX
Text: WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM
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WEDPN16M64VR-XBX
16MX64
128MByte
864bit
16-bit
750mA
66MHz-133MHz
WEDPN16M64VR-XBX
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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IC 4093 bp
Abstract: M62382FP PLQP0100KB-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: WEDPN8M64VR-XBX HI-RELIABILITY PRODUCT 8Mx64 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728
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WEDPN8M64VR-XBX
8Mx64
64MByte
512Mb)
432-bit
16-bit
100MHz
66MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN16M64VR-XB2X 16Mx64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN16M64VR-XB2X
16Mx64
128MByte
864-bit
16-bit
133MHz
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M72VR-XBX 16MX72 REGISTERED SYNCHRONOUS DRAM Preliminary* FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456
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WEDPN16M64VR-XBX
WEDPN16M72VR-XBX
16MX72
128MByte
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN16M72VR-XB2X
16MX72
128MByte
864-bit
16-bit
66MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN16M72VR-XB2X
16MX72
128MByte
864-bit
16-bit
66MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN16M64VR-XB2X 16Mx64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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Original
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WEDPN16M64VR-XB2X
16Mx64
128MByte
864-bit
16-bit
133MHz
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PDF
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WEDPN16M72VR-XB2X
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M72VR-XB2X 16MX72 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION Registered for enhanced performance of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing
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WEDPN16M72VR-XB2X
16MX72
128MByte
864-bit
16-bit
66MHz
WEDPN16M72VR-XB2X
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A09 N03
Abstract: a06 n03 RTU A08 b09 n03 ddc bus-66312 BUS-66312 66312
Text: 000 BUS-66312 ILC DATA DEVICE CORPORATION_ _ _ MIL-STD-1553 TO MICROPROCESSOR INTERFACE UNIT F E A TU R E S • C O M P A T IB L E W ITH M IL-S T D -1750 C PU s • C O M P A T IB L E W ITH M O TO R O LA , INTEL, A N D Z IL O G C PU s • C O M P A T IB L E W ITH D D C
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OCR Scan
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BUS-66312
MIL-STD-1553
BUS-66312
BUS-66312-883B
MIL-STD-883
A09 N03
a06 n03
RTU A08
b09 n03
ddc bus-66312
66312
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Untitled
Abstract: No abstract text available
Text: t e l x d y n e 2 öe co m po nen ts d • QQDbt,Ci0 T ' » 3$ ,*?• .O .0 T -1 3 -2 S CHQ2222 NPN QUAD AMPLIFIER JAN, JANTX, JANTXV pending General Purpose PACKAGE OUTLINE Four NPN Transistors Similar to 2N3467 TO-116 M19600/569-01 CiC Available in Three Hermetic
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OCR Scan
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CHQ2222
2N3467
O-116
M19600/569-01
MIL-S-19500/559
CHQ2222
100kHz
MA0214
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PDF
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RTU A08
Abstract: 308-815
Text: GE C P L E S S E Y !SEMICONDUCTORS I A DVAN CE INFORMATION 3088-1.5 December 1991 CT2566 MIL-STD-1553 TO MICROPROCESSOR INTERFACE UNIT G P S C T 2 5 6 6 M IL -S T D -1 5 5 3 to M ic ro p ro c e s s o r Interface Unit sim plifies the CPU to 1553 Data Bus interface.
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OCR Scan
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CT2566
MIL-STD-1553
BUS-66300
BUS66312)
CT2565
CT2512
050SIDE
CT2566PGA)
RTU A08
308-815
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PDF
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BUS-61553
Abstract: BUS61553 bu-61553
Text: 000 BUS-61553 ILC D ATA D EV ICE C O R P O RATION'S_ _ MIL-STD-1553 ADVANCED INTEGRATED MUX AIM HYBRID DESCRIPTION FEATURES DDC's BUS-61553 Advanced Integrated Mux (AIM) Hybrid is a complete MIL-STD-1553 Bus Controller (BC), Remote Terminal Unit (RTU), and Bus Monitor (MT)
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OCR Scan
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BUS-61553
MIL-STD-1553
BUS-61553
78-pin
MIL-STD-1553-to-host
BUS-63102-Call
BUS61553
bu-61553
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PDF
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Untitled
Abstract: No abstract text available
Text: D _ DC i/:'1! Z,W ; VJ«- BUS-65612 ILC DATA DEVICE CORPORATION _ MIL-STD-1553 BUS CONTROLLER REMOTE TERMINAL CONTACT FACTORY AND BUS MONITOR FOR MORE INFORMATION FEATURES DESCRIPTION The BUS-65612 is a 16 MHz single chip dual re dund ant M IL-S TD -1553 Bus
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OCR Scan
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BUS-65612
MIL-STD-1553
BUS-65612
MIL-STD-1553
BUS-63125,
BUS-65600
-3/92-1M
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BUS-66300
Abstract: No abstract text available
Text: QQQ BUS-66312 ILC D ATA D E V IC E CO RPO RATIO N _ MIL-STD-1553 TO MICROPROCESSOR INTERFACE UNIT REFER TO BUS-61553 FOR MEMORY MANAGEMENT DESCRIPTION AND TIMING. DESCRIPTION DDC's BUS-66312 M IL-S TD -1553 to M icroprocessor Interface Unit sim plifies the CPU to 1553 Data Bus interlace
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OCR Scan
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BUS-66312
MIL-STD-1553
BUS-61553
BUS-66312
VII-226
BUS-66312-883B
MIL-STD-883
BUS-66300
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