CDMA450
Abstract: marking 6701
Text: SAW Bandpass Filter F4811 Features z RF bandpass filter for CDMA450 F-Band Tx. Part z Usable bandwidth 5MHz 479 MHz ~ 484 MHz z High attenuation z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device Package ( 3.8 mm x 3.8 mm ) z RoHS compliant
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Original
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F4811
CDMA450
300mm/min
NR4013-AS02
marking 6701
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PDF
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SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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PDF
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SMD MARKING CODE AADV
Abstract: marking SR5 SMD MT28F1284W18 AADV
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation
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Original
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SMD MARKING CODE AADV
marking SR5 SMD
AADV
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PDF
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MT28F1284W18
Abstract: smd codes marking A21 FY618
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM
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Original
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd codes marking A21
FY618
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PDF
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FY618
Abstract: FY617
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
FY618
FY617
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PDF
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FX109
Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
FX109
FY108
"NOR Flash" intel 28f
MT28F644W18
FY113
FX113
FW117
fw12
FW118
FY114
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PDF
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SR52 W 18
Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
SR52 W 18
FX118
transistor marking A21
FY114
Fw*118
fw104
intel marking 28f
intel package marking w18
marking PBA
marking W18
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PDF
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FX119
Abstract: FX117
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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16-bit)
09005aef8098d2b5
MT28F644W30
FX119
FX117
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PDF
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FY-103
Abstract: 770MAX
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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16-bit)
09005aef8098d2b5
MT28F644W30
FY-103
770MAX
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PDF
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smd transistor bq
Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
smd transistor bq
A22 SMD CODE
SMD MARKING g3
transistor smd marking BA RE
FY616
A22 SMD MARKING CODE
AG qd SMD
smd code book 6e
smd marking g8
TRS.150
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PDF
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DSA0044716
Abstract: SR-52
Text: PRELIMINARY‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 MT28F644W18 1.8V Low Voltage, Extended Temperature Features • • • • • • • • • • • • • • • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multi-partition architecture
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Original
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16-bit)
MT28F644W30
DSA0044716
SR-52
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PDF
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FX110
Abstract: FX108
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero
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Original
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16-bit)
MT28F644W30
FX110
FX108
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PDF
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11027-1E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422E-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11027-1E
MB81117422E-125/-100/-84/-67
152-WORD
MB81117422E
F9705
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PDF
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11023-2E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11023-2E
MB81117422A-125/-100/-84/-67
152-WORD
MB81117422A
F9705
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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Original
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MT28F1284L30
80-Ball
16-bit)
09005aef8115e8b3
MT28F1284L30
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PDF
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FY849
Abstract: FW843 FW842 FW84 FY848 SR-52
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L18 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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Original
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16-bit)
09005aef81002765
MT28F1284L18
FY849
FW843
FW842
FW84
FY848
SR-52
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PDF
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FW863
Abstract: FX861 smd marking H6
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
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Original
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16-bit)
09005aef8115e8b3
MT28F1284L30
FW863
FX861
smd marking H6
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PDF
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Untitled
Abstract: No abstract text available
Text: April 2008 HYB25D128160C[E/T] HYB25D128400C[C/E/T] HYB25D128800C[C/E/F/T] 128-Mbit Double-Data-Rate SDRAM DDR SDRAM Internet Data Sheet Rev. 1.70 Internet Data Sheet HYB25D128[40/80/16]0C[C/E/F/T] 128-Mbit Double-Data-Rate SDRAM Revision History: Rev. 1.70, 2008-04
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Original
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HYB25D128160C
HYB25D128400C
HYB25D128800C
128-Mbit
HYB25D128
HYB25D128800CE-7
HYB25D128800CT-5
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PDF
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11043-2E MEMORY CMOS 2 x 2 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F16422D-102L/-103L/-10L CMOS 2-Bank × 2,097,152-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F16422D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11043-2E
MB81F16422D-102L/-103L/-10L
152-Word
MB81F16422D
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PDF
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11038-2E MEMORY CMOS 2 x 2 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F16422B-75/-102/-103 CMOS 2-Bank × 2,097,152-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F16422B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11038-2E
MB81F16422B-75/-102/-103
152-Word
MB81F16422B
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PDF
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MB81F161622B-102
Abstract: MB81F161622B-75
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-2E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-103 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11039-2E
MB81F161622B-75/-102/-103
288-Word
MB81F161622B
16-bit
MB81F161622B-102
MB81F161622B-75
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PDF
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11044-2E MEMORY CMOS 2 x 1 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F16822D-102L/-103L/-10L CMOS 2-Bank × 1,048,576-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F16822D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11044-2E
MB81F16822D-102L/-103L/-10L
576-Word
MB81F16822D
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PDF
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F9901
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-4E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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Original
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DS05-11039-4E
MB81F161622B-60/-70/-80
288-Word
MB81F161622B
16-bit
F9901
F9901
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PDF
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FX546
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero
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Original
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MT28F322D20
MT28F322D18
MT28F322D18
70nlogo
MT28F322D20FH
FX546
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PDF
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