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    TOPR 150 PHOTODIODE TRANSISTOR Search Results

    TOPR 150 PHOTODIODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TOPR 150 PHOTODIODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active


    Original     		PDF S3901/S3904-F SE-171 KMPD1003E03

    S3903

    Abstract: 512F S3901-256F S3901-512F S3904-1024F S3904-512F S3904-F
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active


    Original     		PDF S3901/S3904-F SE-171 KMPD1003E03 S3903 512F S3901-256F S3901-512F S3904-1024F S3904-512F S3904-F

    TRI-1.25-6

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active


    Original     		PDF S3901/S3904-F SE-171 KMPD1003E04 TRI-1.25-6

    1BW TRANSISTOR

    Abstract: S4828 transistor 1BW transistor 1BW 57 KPCB0007EA KPIC1035E01 S4827 SE-171 transistor uw
    Text: PHOTO IC Photo IC S4827, S4828 Subminiature package S4827 and S4828 are photo ICs comprised of a high-sensitivity photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated into a single chip and molded with visible-cut resin into a subminiature package.


    Original     		PDF S4827, S4828 S4827 S4828 S4827: S4828: SE-171 KPIC1035E01 1BW TRANSISTOR transistor 1BW transistor 1BW 57 KPCB0007EA KPIC1035E01 transistor uw

    Untitled

    Abstract: No abstract text available
    Text: PHOTO IC Low-voltage operation photo IC S6289 Operation at low voltage from 2.2 V The S6289 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.


    Original     		PDF S6289 S6289 SE-171 KPIC1005E05

    S4810

    Abstract: hl 05
    Text: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.


    Original     		PDF S4810-100 S4810-100 SE-171 KPIC1072E02 S4810 hl 05

    S3923

    Abstract: S3922 S3922-128Q S3922-256Q S3922-512Q S3923-1024Q S3923-256Q S3923-512Q high frequency linear cmos IMAGE SENSOR silicon PIN photodiode driver
    Text: IMAGE SENSOR NMOS linear image sensor S3922/S3923 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3922/S3923 SE-171 KMPD1037E01 S3923 S3922 S3922-128Q S3922-256Q S3922-512Q S3923-1024Q S3923-256Q S3923-512Q high frequency linear cmos IMAGE SENSOR silicon PIN photodiode driver

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3921/S3924 SE-171 KMPD1044E01

    S3923-256Q

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3922/S3923 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3922/S3923 SE-171 KMPD1037E01 S3923-256Q

    S3924

    Abstract: ts 8808 S3921 S3921-128Q S3921-256Q S3921-512Q S3924-1024Q S3924-256Q S3924-512Q
    Text: IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3921/S3924 SE-171 KMPD1044E01 S3924 ts 8808 S3921 S3921-128Q S3921-256Q S3921-512Q S3924-1024Q S3924-256Q S3924-512Q

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3922/S3923 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3922/S3923 KMPD1037E03

    S3904

    Abstract: TOPR 150 photodiode transistor S3901 S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q high frequency linear cmos IMAGE SENSOR
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E01 TOPR 150 photodiode transistor S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q high frequency linear cmos IMAGE SENSOR

    silicon photodiode array

    Abstract: photodiode amplifier S3901 S3901-128Q S3901-256Q S3901-512Q S3904 S3904-1024Q S3904-256Q S3904-512Q
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E03 silicon photodiode array photodiode amplifier S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q

    S8382

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S5930/S5931 SE-171 KMPD1018E03 S8382

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3901/S3904 S3901 S3904 KMPD1036E04

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E01

    C8225

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E02 C8225

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S3921/S3924 KMPD1044E03

    photo sensor s4810

    Abstract: S4810 1BW TRANSISTOR S6289
    Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.


    Original     		PDF S4810, S6289 S4810 S6289 S4810: S6289: SE-171 KPIC1005E03 photo sensor s4810 1BW TRANSISTOR

    charge amplifier

    Abstract: cmos IMAGE SENSOR evaluation board
    Text: IMAGE SENSOR CMOS linear image sensor S10226 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance t Surface mount package: 2.4 x 9.1 × 1.6 mm l Pixel pitch: 7.8 µm Pixel height: 125 µm l Number of pixels: 1024 ch


    Original     		PDF S10226 SE-171 KMPD1097E07 charge amplifier cmos IMAGE SENSOR evaluation board

    XA1103

    Abstract: No abstract text available
    Text: CXA1103AM SONY Photodiode l-V Conversion Amplifier Description Package Outline CXA1103AM is a trans-impedance type, wide band low noise am plifier fo r photo detector. Combined with a pin photodiode it composes a high performance optical receiver. U n it: mm


    OCR Scan     		PDF CXA1103AM CXA1103AM 40MHz 10MHz) XA1103

    p0201

    Abstract: transistor r4c photo sensor PHOTO SENSOR of application PHOTO TRANSISTOR ps201 sensor optical PHOTO TR PD101 PS101
    Text: AC INTERFACE INC IDE D |0023303 0000030 3 j PHOTOTRANSISTOR/PIN PHOTODIODE PHOTOTRANSISTOR Ta=g5‘C ' C o llecto r D issipation Type No. Pc T O - 18 PS PD ; CoBectoc-Emittef . Emtter£oS«t«r. Breakdown. Breakdown V oltage -, Voltage • V elo ’ 'V ceo


    OCR Scan     		PDF 00DDD3Ã PP210 p0201 transistor r4c photo sensor PHOTO SENSOR of application PHOTO TRANSISTOR ps201 sensor optical PHOTO TR PD101 PS101

    Photodiode and amplifier IC for CD

    Abstract: 80709-hp A1103 CXA1103AM TOPR 150 photodiode transistor sw1 band sw2 receiver am mw cd photodiode IC sony photodiode IC sony cd
    Text: CXA1103AM SONY. Photodiode l-V Conversion A m p lifier_ For the availabilityof this product, please contact the sales oTfîceT D e s c rip tio n P ackage O u tlin e C XA1103AM is a trans-impedance type, wide band low noise am plifier fo r photo detector. Combined w ith


    OCR Scan     		PDF A1103 CXA1103AM 40MHz -147dBV/VHz 10MHz) Photodiode and amplifier IC for CD 80709-hp TOPR 150 photodiode transistor sw1 band sw2 receiver am mw cd photodiode IC sony photodiode IC sony cd

    st s3931

    Abstract: 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp
    Text: H AM A M A TSU THERM O ELECTRIC ALLY-CO OLED TECHNICAL DATA N-MOS LINEAR IMAGE SENSORS S5930, S5931 SERIES A built-in therm oelectric cooler enables highly stable m easurem ents even at very-low -light level FEATURES • Wide photosensitive area Pixel pitch: 50 n m S5930 Series , 25/* m (S5931 Series)


    OCR Scan     		PDF S5930, S5931 S5930 Telephone306 D-82211 33-CK9 st s3931 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp