LH0036
Abstract: LH0002 LH0036CG S6BR2 LH0036C
Text: LH0036/LH0036C National mm Semiconductor LH0036 Instrumentation Amplifier General Description Features The LH0036C is a micro power instrumentation amplifier de signed tor precision differential signal processing. Extremely high accuracy can be obtained due to the 300 M il Input
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LH0036/LH0036C
LH0036
LH0036C
LH0002
LH0036CG
S6BR2
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IR 30DF
Abstract: No abstract text available
Text: Bulletin 12103 rev. B 07/97 International TOR Rectifier SAFEIR Series 30dps. GLASS PASSIVATED PLASTIC RECTIFIER IF av = 30 Amp 'fsm • 150° C Tj operation = 300 Amp VRRM UP t° 1200V • Glass Passivated chip junction • Low forward voltage drop • High Current Capabilities
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30DPS
30DPS.
TQ-247AC
IR 30DF
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2N8050
Abstract: 2n6057 8050 npn 2n60s0 ns5 transistor Transistor Q 8050 2N6058 MOTOROLA transistor SS 8050 2n6052
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6050 Darlington Complementary Silicon Power IVansistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • High D C Current Gain — h p E = 3500 Typ @ lc = 5.0 Adc • Collector-Emitter Sustaining Voltage — @ 100 mA
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2N6050
2N6052*
2N6057
2N605Sf
2N6050,
2N6052
2N6059
2N8050
8050 npn
2n60s0
ns5 transistor
Transistor Q 8050
2N6058 MOTOROLA
transistor SS 8050
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1505cma
Abstract: IRK 330
Text: Bulletin 127090 International IÖ R Rectifier IRK. SERIES STANDARD RECOVERY DIODES MAGN-A-pak Power Modules Features • 250A 270A 320A High voltage ■ E lectrically isolated base plate ■ 3500 V RMSis o la tin g vo lta g e rev. A 09/97 ■ Industrial standard package
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ULE78996
30-MaximumNon-RepetitiveSurgeCurrent
1505cma
IRK 330
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RK-71
Abstract: No abstract text available
Text: Bulletin 127132 rev. D 09/97 International lO R Rectifier i r k .71 .91 s e r i e s THYRISTOR/DIODE and NEWADD-A-pak Power Modules , THYRISTOR/THYRISTOR Features • Electrically isolated: DBC base plate ■ 3500 V RMg isolating voltage I Standard JED EC package
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ULE78996
RK-71
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IRK 160
Abstract: No abstract text available
Text: Bulletin 127141 rev. C 09/97 International M R Rectifier IRK.91 SERIES NEWADD-A-pak Power Modules STANDARD DIODES Features • Electrically isolated: DBC base plate ■ 3500 VRMg isolating voltage ■ Standard JED EC package ■ Simplified mechanical designs, rapid assembly
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ULE78996
IRK 160
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zt751
Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Text: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30
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OT-223
BSP19AT1
PZTA42T1
BF720T1
BSP20AT1
SP19A
BF720
SP20A
PZTA98T1
PZTA92T1
zt751
3055L
2955E
3055e
zta96
2N02L
marking 651 sot223
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Untitled
Abstract: No abstract text available
Text: Bulletin 127134 rev. B 09/97 International iö R Rectifier irku /V 41 ,56 s e rie s THY R IS TO R /TH Y R ISTO R NEW ADD-A-pak Power Modules Features • ■ Electrically isolated: DBC base plate 3500 VRMg isolating voltage I ■ Standard JED EC package
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ULE78996
IRKU/V41,
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TP-108
Abstract: No abstract text available
Text: A fc RF Transformer 350-1125 MHz • ■ ■ ■ TP-108 50 Ohms Unbalanced to Dual 100 Ohms Unbalanced or 200 Ohms Balanced Low Insertion Loss Accessible Center Tap for DC Bias FP-1 0.015 1 0.0 05 OIA 0.36 ±0.13( Guaranteed Specifications* (From - 5 5 ° C to + 8 5 °C )
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TP-108
MIL-STD-883
p-STD-883
TP-108
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Untitled
Abstract: No abstract text available
Text: Flatpack Quadrature Hybrid 175-350 MHz • Octave Bandwidth ■ Low VSW R — 1.2:1 Typical JH-136 C p .O PIN 0.015 DIA ¿0 .00 5 <0.38 *0.13 • a PLACES Guaranteed Specifications4 From - 55°C to +85°C) D im e n s io n s in ( ) are in m m. Frequency Range
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JH-136
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Untitled
Abstract: No abstract text available
Text: Bulletin 127135 rev.C 09/97 International i ö r Rectifier irku /V 7 1 ,91 s e r ie s NEWADD-A-pak Power Modules THYRISTOR/THYRISTOR Features • ■ Electrically isolated: DBC base plate 3500 VRMg isolating voltage ■ ■ Standard JED EC package Simplified mechanical designs, rapid assembly
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ULE78996
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PDF
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Motorola transistor smd marking codes
Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases
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OT-89
OT-223
C-120,
2001MD,
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING 5c
SMD code
smd TRANSISTOR code marking 2F
toshiba smd marking code transistor
TRANSISTOR SMD MARKING CODE 1P
smd transistor 5c
Diode SOT-23 marking 15d
SMD TRANSISTOR MARKING 6B
TRANSISTOR SMD MARKING CODE 1d
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P2600BA70
Abstract: 380 volt 50 hz 50 amp triac TRIAC FT 1017 P0300EA70 triac 230v 50hz 5kw P3100EA70 P2300EA70 Siebe PP-2046 P3203AA P3100BA
Text: TECCOR ELECTRONICS, INC. A SIEBE COMPANY TO-92 1801 H U R D D R IV E IR V IN G , T E X A S 7 5 0 3 8 -4 3 8 5 P H O N E 2 1 4 /5 8 0 -1 5 1 5 FAX 2 1 4 /5 5 0 -1 3 0 9 MT1 MT2 DO -214AA M odified TO-220 SIDACtor 27 - 540 volts G en e ral In fo rm a tio n
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-214AA
O-220
P2600BA70
380 volt 50 hz 50 amp triac
TRIAC FT 1017
P0300EA70
triac 230v 50hz 5kw
P3100EA70
P2300EA70
Siebe PP-2046
P3203AA
P3100BA
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PDF
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datasheet of ic 555
Abstract: datasheet ic 555 IC 555 800Volts
Text: SC35VB80 REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop 1.417 MAX 36.0 1.412 MAX (29.0) .217(5.5) .177(4.5) ●Mounting position :Any
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SC35VB80
800Volts
35Amperes
datasheet of ic 555
datasheet ic 555
IC 555
800Volts
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scvb
Abstract: datasheet ic 555 datasheet of ic 555 IC 555
Text: SC35VB160 REVERSE VOLTAGE - 1600Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop 1.417 MAX 36.0 1.412 MAX (29.0) .217(5.5) .177(4.5) ●Mounting position :Any
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SC35VB160
1600Volts
35Amperes
scvb
datasheet ic 555
datasheet of ic 555
IC 555
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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SC35VB160-G
Abstract: No abstract text available
Text: Glass Passivated 3 Phase Bridge Rectifiers SC35VB160-G REVERSE VOLTAGE - 1600Volts FORWARD CURRENT - 35Amperes "-G" : RoHS Device FEATURES SCVB - Surge overload -350 amperes peak - Low forward voltage drop - Mounting position :Any .079 2.0 .047(1.2) - Weight: 37g
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SC35VB160-G
1600Volts
35Amperes
MDS0905016A
SC35VB160-G
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Untitled
Abstract: No abstract text available
Text: BURR-BROWN 150108 150109 Isolated VOLTAGE-TO-FREQUENCY CONVERTER FEATURES APPLICATIONS • ISOLATED VFC IN HERMETIC DIP • HIGH-VOLTAGE AC RATINGS: IS0108:1500Vrms, IS0109:3500Vrms • HIGH TRANSIENT IMMUNITY: 10kV/^s • LOW BARRIER LEAKAGE CURRENT: 0.5pA
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IS0108
1500Vrms,
IS0109
3500Vrms
200ppm
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5f transistor
Abstract: No abstract text available
Text: P » » .I « T O W PJB772/PJB772S PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to PJD882 • PW 10#s,Duty Cycle 50% • Pulse Test PW 350#s,Duty Cycle 2% TO-92 TO-126 PJB772S PJB772 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C
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PJB772/PJB772S
PJD882
O-126
PJB772S
PJB772
5f transistor
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Untitled
Abstract: No abstract text available
Text: SC35VB80 REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop ●Mounting position :Any 1.417 MAX 36.0 1.142 MAX (29.0) .256(6.5) .217(5.5)
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SC35VB80
800Volts
35Amperes
25-Dec-2011
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Untitled
Abstract: No abstract text available
Text: SC35VB160 REVERSE VOLTAGE - 1600Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop ●Mounting position :Any 1.417 MAX 36.0 1.142 MAX (29.0) .256(6.5)
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SC35VB160
1600Volts
35Amperes
25-Dec-2011
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PDF
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SCVB weight
Abstract: No abstract text available
Text: Glass Passivated 3 Phase Bridge Rectifiers SC35VB80-G REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes "-G" : RoHS Device FEATURES SCVB - Surge overload -350 amperes peak - Low forward voltage drop - Mounting position :Any 1.417 MAX 36.0 .827 MAX (21.0)
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SC35VB80-G
800Volts
35Amperes
MDS0905015A
SCVB weight
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PDF
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TF 350 C
Abstract: No abstract text available
Text: jtà i M a n A M P <c o m p a n y E-Series Surface Mount Mixer 350 - 2000 MHz EMRS-11F V3.00 Features • • • SM-1 LO Power: +7 dBm Up to +1 dBm RF Surface Mount Specifications @ 25°c Frequency Range RF LO IF 350 - 2000 MHz 350 - 2000 MHz DC - 400 MHz
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EMRS-11F
EMRS-11
TF 350 C
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transistor mje 350
Abstract: transistor mje mje 350 mje 340
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low
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C-120
transistor mje 350
transistor mje
mje 350
mje 340
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