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    TOSHIBA 2SC2500 Search Results

    TOSHIBA 2SC2500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SC2500 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


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    SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52 PDF

    2sc2500

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • • 5.1MAX. High DC Current Gain and Excellent hjrE Linearity : hF E (l) = 140-600 (V c e = 1V, Ie = 0.5A)


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    2SC2500 961001EAA2' 2sc2500 PDF

    2SC2500

    Abstract: transistor 2sc2500
    Text: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 5.1 M AX. High DC Current Gain and Excellent hEE Linearity : hFE(l) = 140-600 (VeE = lV, Ie = 0.5A)


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    2SC2500 961001EAA2' 2SC2500 transistor 2sc2500 PDF

    BT 140-600

    Abstract: ah05 2SC2500 transistor 2sc2500
    Text: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • 5 .1 M A X . High DC Current Gain and Excellent hjrE Linearity : hF E (l) = 140-600 (VCE = 1V, Ie = 0.5A)


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    2SC2500 961001EAA2' BT 140-600 ah05 2SC2500 transistor 2sc2500 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    transistor 2sc2500

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2500 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2 500 STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • H igh D C C u rren t G ain and Ex cellen t h p E L in e a rity • hF E ( l ) = 140-600 (V c e = 1V, I c = 0.5A)


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    2SC2500 961001EAA2' transistor 2sc2500 PDF

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


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    BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a PDF

    equivalent 2SC2655

    Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
    Text: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)


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    0Q07104 OT-89) T092MOD 2SC2880 2SA949 2SA1200 2SA1201 2SA1202 2SC2882 equivalent 2SC2655 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA PDF

    ic 4206

    Abstract: Toshiba 2SC2500 2SC2500 transistor 2sc2500
    Text: TO SH IBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm 5.1 MAX. MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 140-600 (VCE = 1V, I c = 0.5A)


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    2SC2500 ic 4206 Toshiba 2SC2500 transistor 2sc2500 PDF

    2SC2500

    Abstract: transistor 2sc2500 power transistor 2sc2500
    Text: TO SH IBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • • 5 .1 M A X . High DC Current Gain and Excellent hpE Linearity : hFE (l) = 140-600 (Vc e = 1V, Ie = 0.5A)


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    2SC2500 2SC2500 transistor 2sc2500 power transistor 2sc2500 PDF

    transistor c2500

    Abstract: transistor C2500 B transistor 2sc2500
    Text: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


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    2SC2500 transistor c2500 transistor C2500 B transistor 2sc2500 PDF

    transistor c2500

    Abstract: 2SC2500 c2500 transistor 2sc2500 transistor C2500 B
    Text: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


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    2SC2500 transistor c2500 2SC2500 c2500 transistor 2sc2500 transistor C2500 B PDF

    transistor c2500

    Abstract: 2SC2500 C2500 transistor C2500 B transistor 2sc2500
    Text: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


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    2SC2500 transistor c2500 2SC2500 C2500 transistor C2500 B transistor 2sc2500 PDF

    transistor c2500

    Abstract: transistor C2500 B c2500 transistor c2500 Transistor 2sc2500 2SC2500
    Text: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


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    2SC2500 transistor c2500 transistor C2500 B c2500 transistor c2500 Transistor 2sc2500 2SC2500 PDF

    1271A

    Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
    Text: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513


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    2SD1243 2SD1243A 2SD1244 2SD1245 2SD1246 2SD1247 2SD1248 2SD1248K 2SD1251 2SD1252 1271A nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944 PDF

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


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    2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499 PDF

    2SB1384

    Abstract: 2SC1478 2SC1010 2SC1199 2sc2139 toshiba 2sd1111 SRL7C 2sc2082 2sc2105 2SC3415
    Text: - tt 2 SC 1459 s a «±Ji 2SC 1460 • ± JS 2SC 1458 2 SC 1461 2SC 1462 2SC 1463 2SC 1464 2SC 1466 2SC 1467 « Manuf. T y p e No. S SANYO ■±ii g±a «±s S±ü ífrlsTL ÍÍ1&7U 2 TOSHIBA 2SC3604 2SC1236 2SC3604 2SC1236 2SC3587 2SC1236 2SC3604 2SC1236


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    2SC1236 2SC3604 2SC3587 2SB1384 2SC1478 2SC1010 2SC1199 2sc2139 toshiba 2sd1111 SRL7C 2sc2082 2sc2105 2SC3415 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    ta7333p

    Abstract: TA7333 TA7657P 27MHZ radio control circuit 2SC380Y ta7657 LT 7247 radio control radio control receiver IC RADIO RECEIVER 27mhz
    Text: TA7 6 5 7 P t o s h . b a integrated circuit TECHNICAL DATA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC RADIO CONTROL RECEIVER IC Th e T A 7 6 5 7 P is d e s i g n e d for a r a d io control r e c e i v e r IC i n c l u d i n g r egulator,


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    TA7657P TA7657P-4 27MHz) 4-P-300 75MAX 005TYP i7247 TA7657P-6 ta7333p TA7333 TA7657P 27MHZ radio control circuit 2SC380Y ta7657 LT 7247 radio control radio control receiver IC RADIO RECEIVER 27mhz PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF