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    TOSHIBA C5198 AMPLIFIER Search Results

    TOSHIBA C5198 AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA C5198 AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5198

    Abstract: Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 C5198 transistor equivalent 2SA1941
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original     		PDF 2SC5198 2SA1941 C5198 Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 C5198 transistor equivalent 2SA1941

    Toshiba transistor c5198

    Abstract: C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original     		PDF 2SC5198 2SA1941 2-16C1A Toshiba transistor c5198 C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198

    Toshiba transistor c5198

    Abstract: C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original     		PDF 2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198

    Toshiba transistor c5198

    Abstract: C5198 c5198 sample circuit toshiba c5198 2sa1941 2SC5198 c5198 transistor 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original     		PDF 2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 sample circuit toshiba c5198 2sa1941 2SC5198 c5198 transistor 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198

    Toshiba transistor c5198

    Abstract: No abstract text available
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original     		PDF 2SC5198 2SA1941 Toshiba transistor c5198