Untitled
Abstract: No abstract text available
Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.
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JDP4P02U
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JDP4P02U
Abstract: No abstract text available
Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.
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JDP4P02U
JDP4P02U
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JDP4P02U
Abstract: No abstract text available
Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. · Low capacitance: CT = 0.3 pF typ.
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JDP4P02U
JDP4P02U
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JDP2S05FS
Abstract: 042PF
Text: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. 0.1 Characteristics Symbol Rating
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JDP2S05FS
JDP2S05FS
042PF
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Untitled
Abstract: No abstract text available
Text: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. 0.1 Characteristics Symbol Rating
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JDP2S08SC
Abstract: No abstract text available
Text: JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit:mm UHF~VHF Band RF Switch Applications Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S08SC
JDP2S08SC
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Untitled
Abstract: No abstract text available
Text: 1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 Unit in mm High Voltage Switching Applications Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF 2 = 0.90V (typ.)
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1SS403
100mA
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1ss403
Abstract: No abstract text available
Text: 1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 Unit in mm High Voltage Switching Applications Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF 2 = 0.90V (typ.)
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1SS403
1ss403
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1SV312
Abstract: No abstract text available
Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.
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1SV312
1SV312
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Untitled
Abstract: No abstract text available
Text: JDP2S02AFS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AFS UHF~VHF Band RF Switch Applications Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02AFS
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Untitled
Abstract: No abstract text available
Text: JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02AS
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1SV237
Abstract: No abstract text available
Text: TOSHIBA_ 1SV237 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 237 Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance
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1SV237
1SV237
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Untitled
Abstract: No abstract text available
Text: TOSHIBA JDP2S01U TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01U UHF-VHF BAND RF ATTENUATOR APPLICATIONS Unit in mm Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. + 0.2 1.25-0.1 1-1 Low Capacitance
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JDP2S01U
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HP4291A
Abstract: JDP2S01T
Text: TOSHIBA JDP2S01T JDP2S01T TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.
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JDP2S01T
HP4291A
HP4291A
JDP2S01T
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toshiba diode 1A
Abstract: 1SV307 HP4291A
Text: 1SV307 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 307 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = 1.10 Typ. : Or = 0.3pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV307
HP4291A
toshiba diode 1A
1SV307
HP4291A
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Untitled
Abstract: No abstract text available
Text: 1SS403 TOSHIBA TENTATIVE TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS403 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS Two-pin small packages are suitable for higher mounting densities. Excellent in Forward Current and Forward Voltage Characteristics : V f 2 = 0.90 V (Typ.)
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1SS403
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1SV312
Abstract: No abstract text available
Text: 1SV312 TOSHIBA 1 SV3 1 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS 2.1 ± 0.1 • • Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. Low Capacitance
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1SV312
1SV312
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1SS402
Abstract: No abstract text available
Text: 1SS402 TOSHIBA TOSHIBA DIODE TENTATIVE HIGH SPEED SWITCHING APPLICATIONS SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS402 Unit in mm 2.1 ± 0.1 • • • • Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.
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1SS402
1SS402
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Untitled
Abstract: No abstract text available
Text: 1SV307 TOSHIBA 1 S V3 0 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE VHF TUNER BAND SWITCH APPLICATIONS • • Small Package Low Series Resistance Small Total Japacitance : rs = l .i n (Typ. : = O.üpi1' (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV307
--30V
95emiconductor
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Toshiba bridge diode
Abstract: TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
Text: 1SV172 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE U V 1 7 ? VHF-UHF BAND RF ATTENUATOR APPLICATIONS. MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT 50 V V 50 mA If 125 °C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SV172
--50V
100MHz
Toshiba bridge diode
TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
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1SV307
Abstract: HP4291A
Text: 1SV307 TOSHIBA 1 SV3 0 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = l.lO Typ. : Or = 0.3pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV307
HP4291A
1SV307
HP4291A
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Untitled
Abstract: No abstract text available
Text: 1SS402 TOSHIBA TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS 1 SS402 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ± 2.1 0.1 • • • • Two ind.0p6i1d.6i1t diodes s.re mounted on four-pin ultra-small packages that are suitable for higher mounting densities.
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1SS402
SS402
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV308 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 <:\/ 5ns VHF TUNER BAND SWITCH APPLICATIONS Unit in mm • Sm all Package • Low Series Resistance : r^= l . l f l Typ. • Sm all Total Capacitance : C^ —Ö.SpF (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SV308
--30V
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PF7A
Abstract: No abstract text available
Text: 1SV252 TOSHIBA TOSHIBA DIODE 1 SILICON EPITAXIAL PIN TYPE 51 Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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OCR Scan
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1SV252
SC-70
100MHz
PF7A
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