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    TOSHIBA IGBT MG150J1BS11 Search Results

    TOSHIBA IGBT MG150J1BS11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA IGBT MG150J1BS11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MG150J1BS11

    Abstract: TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11
    Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		MG150J1BS11 2-33F2A MG150J1BS11 TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11 PDF

    mg150j

    Abstract: TOSHIBA IGBT MG150J1BS11
    Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		MG150J1BS11 2-33F2A mg150j TOSHIBA IGBT MG150J1BS11 PDF

    MG150J1BS11

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG150J1BS11 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf^l.O/^s Max. (Iç; = 150A) Low Saturation Voltage : (sat) -2.7V (Max.) (Iç; = 150A)


    OCR Scan     		MG150J1BS11 150J1B 2-33F1A MG150J1BS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE m •v ■ SILICON N CHANNEL IGBT r; 1 ^ n 1 1 'w ■ v v ■ r nar <; 1 1 v ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0^s Max. (Iç = i50A) Low Saturation Voltage ; V q e (sat) = 2,7V (Max,) (Iq = 150A)


    OCR Scan     		MG150J1BS11 PDF

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45 PDF

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V q e (sat) = 2.7V (Max.) (Iq = 150A)


    OCR Scan     		MG150J1BS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V qe (sat) = 2.7V (Max.) (Iq = 150A)


    OCR Scan     		MG150J1BS11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA M G150J1BS11 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG1 5 0 J 1 B S 1 1 HIGH PO W E R SWITCHING APPLICATIONS U n it : M O TO R CONTROL APPLICATIONS H igh In p u t Im pedance H igh Speed : tf= 1 .0 ,u s M ax. ( I c = 150A) Low S a tu ra tio n V o ltag e : V ^ E (sat) = 2 -7V (M ax.) (Ic = 150A)


    OCR Scan     		G150J1BS11 PDF

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 PDF